Grading and metastable effects in admittance spectroscopy of CIGS-based solar cells

Cu(In, Ga)Se2-based (CIGS) solar cells have achieved efficiencies up to 20%. Despite these excellent results, the understanding of the underlying mechanisms and the influence of defects on their performance is still incomplete. The determination of the energetic position of the defects and of their density of states is important. Admittance spectroscopy is an adequate technique for this. By varying the external voltage during the measurement, the spatial position where the defect distribution is sensed can be varied. However, the application of external biases can lead to metastable effects in the absorber and therefore to defect relaxation and changes in the doping distribution. Hence, it is important to separate between the effects caused by metastable changes and the change in sensing position of the admittance spectroscopy measurement. This can be achieved by varying the applied voltage during the creation of the metastable state and the measurement itself independently or simultaneously. Admittance spectroscopy under different bias voltage conditions performed on a flexible CIGS-based solar cell are presented and assessed

Assignment of capacitance spectroscopy signals of CIGS solar cells to effects of non-ohmic contacts

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Deep level transient spectroscopy measurements on Mo/Cu(In,Ga)Se2/metal structure

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Combining optical and electrical studies to unravel the effect of Sb doping on CIGS solar cell

A way to lower the manufacturing cost of Cu(In,Ga)Se2 (CIGS) thin film solar cells is to use flexible polymer substrates instead of glass substrates. Because such substrates require a low temperature during absorber deposition, the efficiency of the cells remains slightly lower (18.7%) compared to CIGS on glass substrates (20.3%). Partial compensation of this efficiency loss might be accomplished by Sb doping of the absorber, which is reported to have a positive effect on the morphology of this layer. In this work the defect structure of Sb doped CIGS solar cells is investigated using optical and electrical spectroscopic techniques. Experiments were performed on cells deposited on soda lime glass substrate, adding a thin Sb layer (8, 12 nm) onto the Mo back contact prior to the CIGS absorber deposition. The results are compared with those for cells without Sb doping using the same process. Fourier-Transform near infrared photocurrent measurements in the 10–300K range demonstrate that the band gap of Sb-doped samples is larger than for undoped samples. Photoluminescence spectra in the 5–100K region provide information on shallow-level defects. Deep-Level Transient Spectroscopy spectra of Sb-doped cells exhibit two features not encountered for non-doped cells: 1) a peak at lower temperature than the N1 signal and 2) incomplete charge carrier freeze-out down to 8 K. While the first result appears to be the fingerprint of an extra non-Ohmic contact in the solar cell structure, the second suggests the introduction of a very shallow acceptor by Sb doping. As a salient feature one can accurately monitor the partial hole freeze-out in the 40-60 K range and determine the signature of the intrinsic defects that provide the p-type conductivity of the CIGS absorber using Admittance Spectroscopy

Local Band Gap Measurements by VEELS of Thin Film Solar Cells

This work presents a systematic study that evaluates the feasibility and reliability of local band gap measurements of Cu(In,Ga)Se2 thin films by valence electron energy-loss spectroscopy (VEELS). The compositional gradients across the Cu(In,Ga)Se2 layer cause variations in the band gap energy, which are experimentally determined using a monochromated scanning transmission electron microscope (STEM). The results reveal the expected band gap variation across the Cu(In,Ga)Se2 layer and therefore confirm the feasibility of local band gap measurements of Cu(In,Ga)Se2 by VEELS. The precision and accuracy of the results are discussed based on the analysis of individual error sources, which leads to the conclusion that the precision of our measurements is most limited by the acquisition reproducibility, if the signal-to-noise ratio of the spectrum is high enough. Furthermore, we simulate the impact of radiation losses on the measured band gap value and propose a thickness-dependent correction. In future work, localized band gap variations will be measured on a more localized length scale to investigate, e.g., the influence of chemical inhomogeneities and dopant accumulations at grain boundarie

Local Band Gap Measurements by VEELS of Thin Film Solar Cells

ISSN:1431-9276ISSN:1435-811

Energy Harvesting by Subcutaneous Solar Cells: A Long-Term Study on Achievable Energy Output

Active electronic implants are powered by primary batteries, which induces the necessity of implant replacement after battery depletion. This causes repeated interventions in a patients’ life, which bears the risk of complications and is costly. By using energy harvesting devices to power the implant, device replacements may be avoided and the device size may be reduced dramatically. Recently, several groups presented prototypes of implants powered by subcutaneous solar cells. However, data about the expected real-life power output of subcutaneously implanted solar cells was lacking so far. In this study, we report the first real-life validation data of energy harvesting by subcutaneous solar cells. Portable light measurement devices that feature solar cells (cell area = 3.6 cm2) and continuously measure a subcutaneous solar cell’s output power were built. The measurement devices were worn by volunteers in their daily routine in summer, autumn and winter. In addition to the measured output power, influences such as season, weather and human activity were analyzed. The obtained mean power over the whole study period was 67 uW (=19 uW cm-2), which is sufficient to power e.g. a cardiac pacemaker