Antimicrobial, Conductive, and Mechanical Properties of AgCB/PBS Composite System

Demand for environmentally friendly plastic materials which are obtained from renewable resources such as biomass-based polyesters is of concern. Herein, the enhanced characteristic performances of poly(butylene succinate) (PBS) by employing the fabrication of PBS-based composites with the nanosilver-coated carbon black (AgCB) using an injection-molding method are reported. The preformed AgCB additives are priorly prepared by the benzoxazine oxidation method. Phase characterization of the obtained composite materials examined by X-ray diffraction (XRD) reveals the crystalline PBS matrix and the presence of metallic silver particles, confirming the successful fabrication of the composite materials. Detailed analyses on thermal, mechanical, electrical, and antimicrobial properties of the composite materials are reported. The AgCB-PBS composite materials provide such potential features by an enhancement of electrical conductivity and the antimicrobial activity by an inhibition against E. coli and C. albicans. These AgCB-PBS composite materials show the possibility to be an option for antielectrostatic and antimicrobial applications such as for the production of smart, environmentally friendly keyboards

GreenCut protein CPLD49 of Chlamydomonas reinhardtii associates with thylakoid membranes and is required for cytochrome b 6 f complex accumulation

International audienc

Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C