Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

We demonstrate room temperature, continuous-wave lasing with enhanced far field emission directionality in coupled-cavity photonic crystal lasers, made with InAsP/InP quantum well material. These surface-emitting lasers can have a very low effective threshold power of 14.6 µW, with a linewidth of 60 pm, and 40% of the surface emitted power concentrated within a small divergence angle of ±30°

10Gbit/s bias-free and error-free all-optical NRZ-OOK to RZ-OOK format conversion using a III-V-on-silicon microdisk resonator

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All-optical wavelength conversion using mode switching in InP microdisc laser

Wavelength conversion using an indium phosphide based microdisc laser (MDL) heterogeneously integrated on a silicon-on-insulator waveguide is reported. Several lasing modes are present within the disc cavity, between which wavelength conversion can be performed by mode switching and spectral filtering. For the first time, low-power wavelength up- and downconversion using one single MDL is demonstrated. Operation with a bit error rate below 10(-9) at 2.5 Gbit/s and operation below the forward-error-correction limit of 10(-3) at 10 Gbit/s are shown without the use of additional seeding beams

All-optical flip-flops using electrically pumped microdisk lasers integrated on silicon

We demonstrate flip-flop operation using the directional bistability in ultra-small microdisks (7.5 mu m diameter) heterogeneously bonded on a silicon chip. The pulse energies are only 1.8 fJ and the bias current is 3.5 mA

Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality

We demonstrate room temperature, continuous-wave lasing with enhanced far field emission directionality in coupled-cavity photonic crystal lasers, made with InAsP/InP quantum well material. These surface-emitting lasers can have a very low effective threshold power of 14.6 μW, with a linewidth of 60 pm, and 40 of the surface emitted power concentrated within a small divergence angle of ±30°. © 2011 American Institute of Physics.The authors would like to acknowledge support from the Defense Advanced Research Projects Agency under the Nanoscale Architecture for Coherent Hyperoptical Sources programme under Grant No. #W911NF-07-1-0277 and from the National Science Foundation through NSF CIAN ERC under Grant No. #EEC-0812072. J. G. would like to acknowledge support from NSF Research Experience for Teachers (RET) program through NSF CIAN ERC. P. A. P. would like to acknowledge financial support from Spanish MICINN and CAM through grants NANINPHO-QD (TEC2008- 06756-C03-01/03), CAM2010 Q&C Light (S2009ESP-1503) and Consolider-Ingenio 2010 QOIT (CSD2006-0019).Peer Reviewe

Compact integration of optical sources and detectors on SOI for optical interconnects fabricated in a 200 mm CMOS pilot line

As the demand for bandwidth increases, optical interconnects are coming closer and closer to the chip. Optical interconnects on silicon-on-insulator (SOI) are desirable as this allows for integration with CMOS and the mature processing can be used for photonic integrated circuits. A heterogeneous integration process can be used to include III-V active optical components on SOI. For dense integration compact sources and detectors are required, but they typically need different epitaxial structures to be efficient which limits the integration density. We propose to use an epitaxial structure, which contains both the layers for a laser and for a detector, hereby enabling very compact integration of sources and detectors. Microdisk lasers and waveguide detectors using this epi were completely fabricated in a 200 mm CMOS pilot line and the results are discussed here

Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous “2.5 D” Photonic Crystal

International audienceThe authors report on the design, fabrication and operation of heterogeneous and compact "2.5 D" Photonic Crystal microlaser with a single plane of InAs quantum dots as gain medium. The high quality factor photonic structures are tailored for vertical emission. The devices consist of a top two-dimensional InP Photonic Crystal Slab, a SiO 2 bonding layer, and a bottom high index contrast Si/SiO 2 Bragg mirror deposited on a Si wafer. Despite the fact that no more than about 5% of the quantum dots distribution effectively contribute to the modal gain, room-temperature lasing operation, around 1.5µm, was achieved by photopumping. A low effective threshold, on the order of 350µW, and a spontaneous emission factor, over 0.13, could be deduced from experiments