Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes

Recently InxGa1-xN (x=0-1) thin films and nanostructures have attracted considerable interest in the field of solar assisted water splitting. As a standalone photoelectrode it is very appealing due to its direct, tunable bandgap covering nearly the entire solar spectrum (Fig. 1a), high absorption coefficient and mobility, along with near-perfect band-edge potentials. Moreover, because of the special bands alignment it can be grown on p-Si photocathode and exhibit vertical conductivity without complex tunnel junction. These facts open a possibility to achieve high efficiency, relatively cheap InGaN/Si-based two-photon tandem devices for water splitting

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

Selenium has resurged as a promising photovoltaic material in solar cell research due to its wide direct bandgap of 1.95 eV, making it a suitable candidate for a top cell in tandem photovoltaic devices. However, the optoelectronic quality of selenium thin-films has been identified as a key bottleneck for realizing high-efficiency selenium solar cells. In this study, we present a novel approach for crystallizing selenium thin-films using laser-annealing as an alternative to the conventionally used thermal annealing strategy. By laser-annealing through a semitransparent substrate, a buried layer of high-quality selenium crystallites is formed and used as a growth template for solid-phase epitaxy. The resulting selenium thin-films feature larger and more preferentially oriented grains with a negligible surface roughness in comparison to thermally annealed selenium thin-films. We fabricate photovoltaic devices using this strategy, and demonstrate a record ideality factor of n=1.37, a record fill factor of FF=63.7%, and a power conversion efficiency of PCE=5.0%. The presented laser-annealing strategy is universally applicable and is a promising approach for crystallizing a wide range of photovoltaic materials where high temperatures are needed while maintaining a low substrate temperature

Comparison of the Performance of CoP-Coated and Pt-Coated Radial Junction n^+p-Silicon Microwire-Array Photocathodes for the Sunlight-Driven Reduction of Water to H_2(g)

The electrocatalytic performance for hydrogen evolution has been evaluated for radial-junction n^+p-Si microwire (MW) arrays with Pt or cobalt phosphide, CoP, nanoparticulate catalysts in contact with 0.50 M H_2SO_4(aq). The CoP-coated (2.0 mg cm^(–2)) n^+p-Si MW photocathodes were stable for over 12 h of continuous operation and produced an open-circuit photovoltage (V_(oc)) of 0.48 V, a light-limited photocurrent density (J_(ph)) of 17 mA cm^(–2), a fill factor (ff) of 0.24, and an ideal regenerative cell efficiency (η_(IRC)) of 1.9% under simulated 1 Sun illumination. Pt-coated (0.5 mg cm^(–2)) n^+p-Si MW-array photocathodes produced V_(oc) = 0.44 V, J_(ph) = 14 mA cm^(–2), ff = 0.46, and η = 2.9% under identical conditions. Thus, the MW geometry allows the fabrication of photocathodes entirely comprised of earth-abundant materials that exhibit performance comparable to that of devices that contain Pt