794 research outputs found

    Excitons in coupled InAs/InP self-assembled quantum wires

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    Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states and the photoluminescence peak energies are calculated. Where possible we compare with available photo-luminescence data from which it was possible to determine the height of the quantum wires. An anti-crossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the exciton wavefunction. This crossing is the signature of two different coupling regimes.Comment: 8 pages, 8 figures. To appear in Physical Review

    Virulence of newcastle disease virus: what is known so far?

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    In the last decade many studies have been performed on the virulence of Newcastle disease virus (NDV). This is mainly due to the development of reverse genetics systems which made it possible to genetically modify NDV and to investigate the contribution of individual genes and genome regions to its virulence. However, the available information is scattered and a comprehensive overview of the factors and conditions determining NDV virulence is lacking. This review summarises, compares and discusses the available literature and shows that virulence of NDV is a complex trait determined by multiple genetic factors

    Confinement and edge effects on atomic collapse in graphene nanoribbons

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    Atomic collapse in graphene nanoribbons behaves in a fundamentally different way as compared to monolayer graphene, due to the presence of multiple energy bands and the effect of edges. For armchair nanoribbons we find that bound states gradually transform into atomic collapse states with increasing impurity charge. This is very different in zig-zag nanoribbons where multiple quasi-one-dimensional \emph{bound states} are found that originates from the zero energy zig-zag edge states. They are a consequence of the flat band and the electron distribution of these bound states exhibits two peaks. The lowest energy edge state transforms from a bound state into an atomic collapse resonance and shows a distinct relocalization from the edge to the impurity position with increasing impurity charge

    On the Geometric Interpretation of the Nonnegative Rank

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    The nonnegative rank of a nonnegative matrix is the minimum number of nonnegative rank-one factors needed to reconstruct it exactly. The problem of determining this rank and computing the corresponding nonnegative factors is difficult; however it has many potential applications, e.g., in data mining, graph theory and computational geometry. In particular, it can be used to characterize the minimal size of any extended reformulation of a given combinatorial optimization program. In this paper, we introduce and study a related quantity, called the restricted nonnegative rank. We show that computing this quantity is equivalent to a problem in polyhedral combinatorics, and fully characterize its computational complexity. This in turn sheds new light on the nonnegative rank problem, and in particular allows us to provide new improved lower bounds based on its geometric interpretation. We apply these results to slack matrices and linear Euclidean distance matrices and obtain counter-examples to two conjectures of Beasly and Laffey, namely we show that the nonnegative rank of linear Euclidean distance matrices is not necessarily equal to their dimension, and that the rank of a matrix is not always greater than the nonnegative rank of its square

    Translation of automotive module RF immunity test limits into equivalent IC test limits using S-parameter IC models

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    A method to translate immunity specifications of automotive modules into equivalent requirements at integrated circuit (IC) level, using linear scattering parameter models of the ICs, is presented. A technique is described to determine S-parameters of ICs by simulations based on back-annotated analog schematics. The simulation results are compared with measurement data obtained using a specially designed test board. As an example, simulation and measurement results are given for the input stage of an automotive sensor interface. A good agreement is obtained from the lowest test frequency up to 1 GHz. Above this value, the measured results seem to be dominated by package effects
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