Stopmotion' film adaptations of Roald Dahl's 'James and the Giant Peach' and 'Fantastic Mr. Fox'

El objetivo de este breve artículo es analizar el uso de la técnica cinematográfica del stopmotion en dos películas de animación basadas en James and the Giant Peach (1961) y Fantastic Mr. Fox (1979), de la autoría de Roald Dahl (United Kingdom, 1916-1990), profundizando en el proceso de adaptación al formato audiovisual teniendo en cuenta la retórica del relato fantástico. La primera de ellas es una película de Walt Disney Pictures, producida por Tim Burton y Denise di Nove, dirigida por Henry Selick y estrenada en 1996; la segunda de ellas fue producida por Indian Paintbrush y Regency Enterprises, dirigida por Wes Anderson y estrenada en 2009. Por tanto, se hará un pequeño marco teórico sobre la Literatura Infantil y Juvenil fantástica, el cine de animación y la influencia que la semiótica de ambos lenguajes tiene en la adaptación resultante de su combinación.O obxectivo deste breve artigo é analizar o uso da técnica cinematográfica do stopmotion en dúas películas de animación baseadas en James and the Giant Peach (1961) e Fantastic Mr. Fox (1979), da autoría de Roald Dahl (United Kingdom, 1916-1990), profundando no proceso de adaptación ao formato audiovisual tendo en conta a retórica do relato fantástico. A primeira delas é unha película de Walt Disney Pictures, producida por Tim Burton e Denise di Nove, dirixida por Henry Selick e estreada en 1996; a segunda delas foi producida por Indian Paintbrush e Regency Enterprises, dirixida por Wes Anderson e estreada en 2009. Polo tanto, farase un pequeno marco teórico sobre a Literatura Infantil e Xuvenil fantástica, o cinema de animación e a influencia que a semiótica de ambas linguaxes ten na adaptación resultante da súa combinación.The aim of this short article is to analyse the use of stopmotion filmmaking technique in two animation films based on Roald Dahl’s (United Kingdom, 1916-1990) James and the Giant Peach (1961) and Fantastic Mr. Fox (1979), deepening in the process of adaptation to the audiovisual format having into account the rhetoric of fantasy books. The first of them is a Walt Disney Pictures film which was produced by Tim Burton and Denise di Novi, directed by Henry Selick and released in 1996; the second one was produced by Indian Paintbrush and Regency Enterprises, directed by Wes Anderson and released in 2009. Therefore, during the communication will be briefly explained short theoretical input about Children and Young Adults Fantasy Literature, animation cinema and the influence of semiotic of both languages in the film adaptation resulting of combining both of them

A novel electromigration characterization method based on low-frequency noise measurements

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Electromigration Activation Energies in Ruthenium Interconnects

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Low-Frequency Noise Measurements for Electromigration Characterization in BEOL Interconnects

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Study of electromigration mechanisms in 22nm half-pitch Cu interconnects by 1/f noise measurements

The electromigration (EM) performance of Cu interconnects with different barrier/liner combinations is studied by means of 1/f (or generally known as low-frequency) noise measurements. It is shown that Cu interconnects with a TaN barrier and Co liner have lower EM activation energies for 22nm half-pitch line-widths than Ru based liners. Indeed, interconnects with a 1nm Ru liner (both with TaN and Mn-based barriers) are found to outperform lines with a Co liner in terms of EM reliability. A possible explanation for this is a less defective Cu/Ru interface as compared to Cu/Co.status: publishe

Reliability challenges related to TSV integration and 3-D stacking

© 2013 IEEE. This article identifies four major reliability challenges related to TSV-based 3-D integrated circuits and their solutions that are being developed at imec.status: publishe

Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages

We describe an X-ray diffraction imaging technique for nondestructive, in situ measurement of die warpage in encapsulated chip packages at acquisition speeds approaching real time. The results were validated on a series of samples with known inbuilt convex die warpage, and the measurement of wafer bow was compared with the results obtained by optical profilometry. We use the technique to demonstrate the impact of elevated temperature on a commercially sourced micro quad flat nonlead chip package and show that the strain becomes locked in at a temperature between 94 °C and 120 °C. Using synchrotron radiation at the Diamond Light Source, warpage maps for the entire 2.2 mm × 2.4 mm × 150-μm Si die were acquired in 50 s, and individual line scans in times as short as 500 ms

Nondestructive monitoring of die warpage in encapsulated chip packages

We describe an X-ray diffraction imaging technique for nondestructive, in situ measurement of die warpage in encapsulated chip packages at acquisition speeds approaching real time. The results were validated on a series of samples with known inbuilt convex die warpage, and the measurement of wafer bow was compared with the results obtained by optical profilometry. We use the technique to demonstrate the impact of elevated temperature on a commercially sourced micro quad flat nonlead chip package and show that the strain becomes locked in at a temperature between 94 °C and 120 °C. Using synchrotron radiation at the Diamond Light Source, warpage maps for the entire 2.2 mm × 2.4 mm × 150-µm Si die were acquired in 50 s, and individual line scans in times as short as 500 ms.status: publishe

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

© 2015 AIP Publishing LLC. Stress-Induced Leakage Current (SILC) behavior during the dielectric degradation of ultra-porous SiOCH low-k materials was investigated. Under high voltage stress, SILC increases to a critical value before final hard breakdown. This SILC increase rate is mainly driven by the injected charges and is negligibly influenced by temperature and voltage. SILC is found to be transient and shows a t-1 relaxation behavior, where t is the storage time at low voltages. This t-1 transient behavior, described by the tunneling front model, is caused by both electron charging of neutral defects in the dielectric close to the cathode interface and discharging of donor defects close to the anode interface. These defects have a uniform density distribution within the probed depth range, which is confirmed by the observed flat band voltage shift results collected during the low voltage storage. By applying an additional discharging step after the low voltage storage, the trap energies and spatial distributions are derived. In a highly degraded low-k dielectric, the majority of defects have a trap depth between 3.4 eV and 3.6 eV and a density level of 1 × 1018eV-1cm-3. The relation between the defect density N and the total amount of the injected charges Q is measured to be sub-linear, N ∼ Q0.45±0.07. The physical nature of these stress-induced defects is suggested to be caused by the degradation of the Si-O based skeleton in the low-k dielectric.status: publishe