4,594 research outputs found

    Exact polarizability and plasmon resonances of partly buried nanowires

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    The electrostatic polarizability for both vertical and horizontal polarization of two conjoined half-cylinders partly buried in a substrate is derived in an analytical closed-form expression. Using the derived analytical polarizabilities we analyze the localized surface plasmon resonances of three important metal nanowire configurations: (1) a half-cylinder, (2) a half-cylinder on a substrate, and (3) a cylinder partly buried in a substrate. Among other results we show that the substrate plays an important role for spectral location of the plasmon resonances. Our analytical results enable an easy, fast, and exact analysis of many complicated plasmonic nanowire configurations including nanowires on substrates. This is important both for comparison with experimental data, for applications, and as benchmarks for numerical methods

    Field-induced dissociation of two-dimensional excitons in transition-metal dichalcogenides

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    Generation of photocurrents in semiconducting materials requires dissociation of excitons into free charge carriers. While thermal agitation is sufficient to induce dissociation in most bulk materials, an additional push is required to induce efficient dissociation of the strongly bound excitons in monolayer transition-metal dichalcogenides (TMDs). Recently, static in-plane electric fields have proven to be a promising candidate. In the present paper, we introduce a numerical procedure, based on exterior complex scaling, capable of computing field-induced exciton dissociation rates for a wider range of field strengths than previously reported in literature. We present both Stark shifts and dissociation rates for excitons in various TMDs calculated within the Mott-Wannier model. Here, we find that the field induced dissociation rate is strongly dependent on the dielectric screening environment. Furthermore, applying weak-field asymptotic theory (WFAT) to the Keldysh potential, we are able to derive an analytical expression for exciton dissociation rates in the weak-field region

    Quantum spill out in few-nanometer metal gaps: Effect on gap plasmons and reflectance from ultrasharp groove arrays

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    Plasmons in ultranarrow metal gaps are highly sensitive to the electron density profile at the metal surfaces. Using a fully quantum mechanical approach, we study the effects of electron spill-out on gap plasmons and reflectance from ultrasharp metal grooves. We demonstrate that the mode index of ultranarrow gap plasmons converges to the bulk refractive index in the limit of vanishing gap and, thereby, rectify the unphysical divergence found in classical models. Surprisingly, spill-out also significantly increases the plasmonic absorption for few-nanometer gaps and lowers the reflectance from arrays of ultrasharp metal grooves. These findings are explained in terms of enhanced gap plasmon absorption taking place inside the gap 1-2 {\AA} from the walls and delocalization near the groove bottom. Reflectance calculations taking spill-out into account are shown to be in much better agreement with measurements compared with classical models

    Quantum spill-out in nanometer-thin gold slabs: Effect on plasmon mode index and plasmonic absorption

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    A quantum mechanical approach and local response theory are applied to study plasmons propagating in nanometer-thin gold slabs sandwiched between different dielectrics. The metal slab supports two different kinds of modes, classified as long-range and short-range plasmons. Quantum spill-out is found to significantly increase the imaginary part of their mode indices, and, surprisingly, even for slabs wide enough to approach bulk the increase is 20%. This is explained in terms of enhanced plasmonic absorption, which mainly takes place at narrow peaks located near the slab surface

    Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride

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    DC photoelectrical currents can be generated purely as a non-linear effect in uniform media lacking inversion symmetry without the need for a material junction or bias voltages to drive it, in what is termed photogalvanic effect. These currents are strongly dependent on the polarization state of the radiation, as well as on topological properties of the underlying Fermi surface such as its Berry curvature. In order to study the intrinsic photogalvanic response of gapped graphene (GG), biased bilayer graphene (BBG), and hexagonal boron nitride (hBN), we compute the non-linear current using a perturbative expansion of the density matrix. This allows a microscopic description of the quadratic response to an electromagnetic field in these materials, which we analyze as a function of temperature and electron density. We find that the intrinsic response is robust across these systems and allows for currents in the range of pA cm/W to nA cm/W. At the independent-particle level, the response of hBN-based structures is significant only in the ultra-violet due to their sizeable band-gap. However, when Coulomb interactions are accounted for by explicit solution of the Bethe-Salpeter equation, we find that the photoconductivity is strongly modified by transitions involving exciton levels in the gap region, whose spectral weight dominates in the overall frequency range. Biased bilayers and gapped monolayers of graphene have a strong photoconductivity in the visible and infrared window, allowing for photocurrent densities of several nA cm/W. We further show that the richer electronic dispersion of BBG at low energies and the ability to change its band-gap on demand allows a higher tunability of the photocurrent, including not only its magnitude but also, and significantly, its polarity.Comment: Updating with published version and respective references; 14 pages, 11 figure

    Rigorous perturbation theory versus variational methods in the spectral study of carbon nanotubes

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    Recent two-photon photo-luminescence experiments give accurate data for the ground and first excited excitonic energies at different nanotube radii. In this paper we compare the analytic approximations proved in \cite{CDR}, with a standard variational approach. We show an excellent agreement at sufficiently small radii.Comment: Accepted for publication in Contemporary Mathematic

    Correlation and dimensional effects of trions in carbon nanotubes

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    We study the binding energies of singlet trions, i.e. charged excitons, in carbon nanotubes. The problem is modeled, through the effective-mass model, as a three-particle complex on the surface of a cylinder, which we investigate using both one- and two-dimensional expansions of the wave function. The effects of dimensionality and correlation are studied in detail. We find that the Hartree-Fock approximation significantly underestimates the trion binding energy. Combined with band structures calculated using a non-orthogonal nearest neighbour tight binding model, the results from the cylinder model are used to compute physical binding energies for a wide selection of carbon nanotubes. In addition, the dependence on dielectric screening is examined. Our findings indicate that trions are detectable at room temperature in carbon nanotubes with radius below 8{\AA}

    Boron and nitrogen doping in graphene antidot lattices

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    Bottom-up fabrication of graphene antidot lattices (GALs) has previously yielded atomically precise structures with sub-nanometer periodicity. Focusing on this type of experimentally realized GAL, we perform density functional theory calculations on the pristine structure as well as GALs with edge carbon atoms substituted with boron or nitrogen. We show that p- and n-type doping levels emerge with activation energies that depend on the level of hydrogenation at the impurity. Furthermore, a tight-binding parameterization together with a Green's function method are used to describe more dilute doping.Comment: 8 pages, 7 figure

    Optical properties of graphene antidot lattices

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    Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.Comment: 11 pages, 9 figures, accepted for publication in Phys. Rev.

    The Faraday effect revisited: General theory

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    This paper is the first in a series revisiting the Faraday effect, or more generally, the theory of electronic quantum transport/optical response in bulk media in the presence of a constant magnetic field. The independent electron approximation is assumed. At zero temperature and zero frequency, if the Fermi energy lies in a spectral gap, we rigorously prove the Widom-Streda formula. For free electrons, the transverse conductivity can be explicitly computed and coincides with the classical result. In the general case, using magnetic perturbation theory, the conductivity tensor is expanded in powers of the strength of the magnetic field BB. Then the linear term in BB of this expansion is written down in terms of the zero magnetic field Green function and the zero field current operator. In the periodic case, the linear term in BB of the conductivity tensor is expressed in terms of zero magnetic field Bloch functions and energies. No derivatives with respect to the quasi-momentum appear and thereby all ambiguities are removed, in contrast to earlier work.Comment: Final version, accepted for publication in J. Math. Phy
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