Microwave Near-Field Imaging of Two-Dimensional Semiconductors

Optimizing new generations of two-dimensional devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) imaging of single layers of MoS_2 and n- and p-doped WSe_2. By controlling the sample charge carrier concentration through the applied tip bias, we are able to reversibly control and optimize the SMM contrast to image variations in electronic structure and the localized effects of surface contaminants. By further performing tip bias-dependent point spectroscopy together with finite element simulations, we distinguish the effects of the quantum capacitance and determine the local dominant charge carrier species and dopant concentration. These results underscore the capability of SMM for the study of 2D materials to image, identify, and study electronic defects

Microwave Near-Field Imaging of Two-Dimensional Semiconductors

Optimizing new generations of two-dimensional devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) imaging of single layers of MoS_2 and n- and p-doped WSe_2. By controlling the sample charge carrier concentration through the applied tip bias, we are able to reversibly control and optimize the SMM contrast to image variations in electronic structure and the localized effects of surface contaminants. By further performing tip bias-dependent point spectroscopy together with finite element simulations, we distinguish the effects of the quantum capacitance and determine the local dominant charge carrier species and dopant concentration. These results underscore the capability of SMM for the study of 2D materials to image, identify, and study electronic defects

Measurement techniques for radio frequency nanoelectronics

Connect basic theory with real-world applications with this practical, cross-disciplinary guide to radio frequency measurement of nanoscale devices and materials.• Learn the techniques needed for characterizing the performance of devices and their constituent building blocks, including semiconducting nanowires, graphene, and other two dimensional materials such as transition metal dichalcogenides• Gain practical insights into instrumentation, including on-wafer measurement platforms and scanning microwave microscopy• Discover how measurement techniques can be applied to solve real-world problems, in areas such as passive and active nanoelectronic devices, semiconductor dopant profiling, subsurface nanoscale tomography, nanoscale magnetic device engineering, and broadband, spatially localized measurements of biological materialsFeaturing numerous practical examples, and written in a concise yet rigorous style, this is the ideal resource for researchers, practicing engineers, and graduate students new to the field of radio frequency nanoelectronics

Understanding Early Failure Behavior in 3D-Interconnects: Empirical Modeling of Broadband Signal Losses in TSV-Enabled Interconnects

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