Mesoscopic magnetoelectric effect in chaotic quantum dots

The magnitude of the inverse Faraday effect (IFE), a static magnetization due to an ac electric field, can be strongly increased in a mesoscopic sample, sensitive to time-reversal symmetry (TRS) breaking. Random rectification of ac voltages leads to a magnetization flux, which can be detected by an asymmetry of Hall resistances in a multi-terminal setup. In the absence of applied magnetic field through a chaotic quantum dot the IFE scale, quadratic in voltage, is found as an analytic function of the ac frequency, screening, and coupling to the contacts and floating probes, and numerically it does not show any effect of spin-orbit interaction. Our results qualitatively agree with a recent experiment on TRS-breaking in a six-terminal Hall cross.Comment: 4+ pages, 2 figures; v2-published version, small change

Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs

The resistivity, Hall effect and transverse magnetoresistance (MR) have been measured in low residual resistivity single crystals of LiFeAs. A comparison with angle resolved photoemission spectroscopy and quantum oscillation data implies that four carrier bands unevenly contribute to the transport. However the scattering rates of the carriers all display the T^2 behavior expected for a Fermi liquid. Near Tc low field deviations of the MR with respect to a H^2 variation permit us to extract the superconducting fluctuation contribution to the conductivity. Though below Tc the anisotropy of superconductivity is rather small, the superconducting fluctuations display a quasi ideal two-dimensional behavior which persists up to 1.4 Tc. These results call for a refined theoretical understanding of the multiband behavior of superconductivity in this pnictide.Comment: 8pages with supplementary material, 6 figure

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.Comment: 8 pages, 4 figures, tabl

Mg-Ni-H films as selective coatings: tunable reflectance by layered hydrogenation

Unlike other switchable mirrors, Mg2NiHx films show large changes in reflection that yield very low reflectance (high absorptance) at different hydrogen contents, far before reaching the semiconducting state. The resulting reflectance patterns are of interference origin, due to a self-organized layered hydrogenation mechanism that starts at the substrate interface, and can therefore be tuned by varying the film thickness. This tunability, together with the high absorptance contrast observed between the solar and the thermal energies, strongly suggests the use of these films in smart coatings for solar applications.Comment: Three two-column pages with 3 figures embedded; RevTE

Insulator-to-metal transition in sulfur-doped silicon

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.Comment: Submission formatting; 4 journal pages equivalen

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure

Extraordinary Magnetoresistance in Hybrid Semiconductor-Metal Systems

We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a quasi-two-dimensional character. Using the same materials and geometries for the samples as in experiments by Solin et al.[1;2], we show that such systems indeed exhibit a huge magnetoresistance. The magnetoresistance arises due to the switching of electrical current paths passing through the metallic inclusion. Diagrams illustrating the flow of the current density within the samples are utilised in discussion of the mechanism responsible for the magnetoresistance effect. Extensions are then suggested which may be applicable to the silver chalcogenides. Our theory offers an excellent description and explanation of experiments where a huge magnetoresistance has been discovered[2;3].Comment: 12 Pages, 5 Figure

Versatile and scalable fabrication method for laser-generated focused ultrasound transducers

A versatile and scalable fabrication method for laser-generated focused ultrasound transducers is proposed. The method is based on stamping a coated negative mold onto polydimethylsiloxane, and it can be adapted to include different optical absorbers that are directly transferred or synthesized in situ. Transducers with a range of sizes down to 3 mm in diameter are presented, incorporating two carbonaceous (multiwalled carbon nanoparticles and candle soot nanoparticles) and one plasmonic (gold nanoparticles) optically absorbing component. The fabricated transducers operate at central frequencies in the vicinity of 10 MHz with bandwidths in the range of 15–20 MHz. A transducer with a diameter of 5 mm was found to generate a positive peak pressure greater than 35 MPa in the focal zone with a tight focal spot of 150 μm in lateral width. Ultrasound cavitation on the tip of an optical fiber was demonstrated in water for a transducer with a diameter as small as 3 mm

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication

Long-range nonlocal flow of vortices in narrow superconducting channels

We report a new nonlocal effect in vortex matter, where an electric current confined to a small region of a long and sufficiently narrow superconducting wire causes vortex flow at distances hundreds of inter-vortex separations away. The observed remote traffic of vortices is attributed to a very efficient transfer of a local strain through the one-dimensional vortex lattice, even in the presence of disorder. We also observe mesoscopic fluctuations in the nonlocal vortex flow, which arise due to "traffic jams" when vortex arrangements do not match a local geometry of a superconducting channel.Comment: a slightly longer version of a tentatively accepted PR