Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires

International audienc

Wetting layer states of InAs/GaAs self-assembled quantum dot structures. Effect of intermixing and capping layer

The authors present a modulated reflectivity study of the wetting layer (WL) states in mol. beam epitaxy grown InAs/GaAs quantum dot (QD) structures designed to emit light in the 1.3-1.5 micro m range. A high sensitivity of the technique has allowed the observation of all optical transitions in the QD system, including low oscillator strength transitions related to QD ground and excited states, and the ones connected with the WL quantum well (QW). The support of WL content profiles, detd. by transmission electron microscopy, has made it possible to analyze in detail the real WL QW confinement potential which was then used for calcg. the optical transition energies. In spite of a very effective WL QW intermixing, mainly due to the Ga-In exchange process (causing the redn. of the max. indium content in the WL layer to about 35% from nominally deposited InAs), the transition energies remain almost unaffected. The latter effect could be explained in effective mass envelope function calcns. taking into account the intermixing of the QW interfaces described within the diffusion model. We have followed the WL-related transitions of 2 closely spaced QD layers grown at different temps., as a function of the In content in the capping layer. Changing the capping layer from pure GaAs to In0.236Ga0.764As has no significant influence on the compn. profile of the WL itself and the WL QW transitions can be usually interpreted properly when based on the cap-induced modification of the confinement potential within a squarelike QW shape approxn. However, some of the obsd. features could be explained only after taking into consideration the effects of intermixing and InGaAs cap layer decompn. [on SciFinder (R)

Conductance statistics from a large array of sub-10 nm molecular junctions

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting Atomic Force Microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (beta) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values.Comment: ACS Nano (in press

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal organic vapor phase epitaxy (MOVPE). In particular we reveal and discuss the role of unintentional Ga incorporation in the barrier and also in the interlayer. The observation of unintentional Ga incorporation by using energy dispersive X–ray spectroscopy analysis in a scanning transmission electron microscope is supported with results obtained for samples with a range of AlN interlayer thicknesses grown under both the showerhead as well as the horizontal type MOVPE reactors. Poisson–Schrödinger simulations show that for high Ga incorporation in the Al(Ga)N interlayer, an additional triangular well with very small depth may be exhibited in parallel to the main 2–DEG channel. The presence of this additional channel may cause parasitic conduction and severe issues in device characteristics and processing. Producing a HEMT structure with InAlGaN as the barrier and AlGaN as the interlayer with appropriate alloy composition may be a possible route to optimization, as it might be difficult to avoid Ga incorporation while continuously depositing the layers using the MOVPE growth method. Our present work shows the necessity of a multicharacterization approach to correlate structural and electrical properties to understand device structures and their performance

Optical and electronic properties of GaAs-based structures with columnar quantum dots

The electronic properties of a structure with columnar quantum dots obtained by close stacking of InAs submonolayers were studied by contactless electroreflectance (CER) and photoluminescence. These dots have an almost ideally rectangular cross section and uniform compn., which is promising for polarization independent gain. After energy level calcns. in the effective mass approxn. using compn. profiles obtained from cross-sectional TEM the part of the CER spectrum related to the 2-dimensional surrounding layer was explained and single heavy-hole-like and light-hole-like transitions related to the columnar dots identified, due to a single electron state confined in a shallow in-plane potential. [on SciFinder (R)

Population regulation in lake whitefish, Coregonus clupeaformis (Mitchill)

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/73745/1/j.1095-8649.1981.tb03822.x.pd

Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

International audienc

Photo-Activated Phosphorescence of Ultrafine ZnS:Mn Quantum Dots: On the Lattice Strain Contribution

We address the enhancement of orange-light luminescence of Mn-doped zinc sulfide nanoparticles (NPs) induced by exposure to UV light. Ultrafine ZnS:Mn NPs are prepared by microwave-assisted crystal growth in ethanol, without adding any dispersant agents. When exposed to UV light, their orange emission intensity undergoes a strong increase. This effect is observed when the NPs are deposited as a thin layer on a transparent substrate or dispersed in an ethanolic suspension. Such a feature was already observed on polymer- or surfactant-coated ZnS:Mn NPs and explained as a passivation effect. In this study, by coupling X-ray photoelectron, Fourier transform infrared, and electron paramagnetic resonance spectroscopy, we establish that this photoactivated luminescence is rather the consequence of lattice-strain effects. Indeed, our data show that UV irradiation in air promotes surface oxidation, replacing the outer sulfide layer with a sulfate one. The mismatch between the resulting outer crystallographic metal sulfate lattice and the inner sulfide one induces mechanical strains on the latter, thus partially relaxing the selection rules controlling the electronic transition from the 4T1 to the 6A1 molecular states of [MnS4]6- emitting centers. These results are relevant because they shed light on the long controversial discussions on the origin of the photoactivated phosphorescence in such systems