Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

The Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect-transistors were discussed. It was found that the formation of tunnel barries and a quantum dot in a single-electron transistor structure originated from two p+ - p+ tunnel junctions and a p+ -doped channel with mesoscopic dimension, respectively. At liquid nitrogen temperature, the Coulomb-blockade oscillations with multiple peaks were also observed. Analysis shows that the single-electron charging effect based on band-to-band tunneling was confirmed using the electrical and thermal characterization of the quantum dots.open2

Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire

For the purpose of controllable characteristics, silicon single-electron tunneling transistors with an electrically formed Coulomb island are proposed and fabricated on the basis of the sidewall process technique. The fabricated devices are based on a silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field effect transistor with them depletion gate. The key fabrication technique consists of two sidewall process techniques. One is the patterning of a uniform SOI nanowire, and the other is the formation of n-doped polysilicon sidewall depletion gates. While the width of a Coulomb island is determined by the width of a SOI nanowire, its length is defined by the separation between two sidewall depletion gates which are formed by a conventional lithographic process combined with the second-sidewall process. These sidewall techniques combine the conventional lithography and process technology, and guaran tee the compatibility with complementary MOS process technology. Moreover, critical dimension depends not on the lithographical limit but on the controllability of chemical vapor deposition and reactive-ion etching. Very uniform weakly p-doped SOI nanowire defined by the sidewall technique effectively suppresses unintentional tunnel junctions formed by the fluctuation of the geometry or dopant in SOI nanowire, and the Coulomb island size dependence of the device characteristics confirms the good controllability. A voltage gain larger than one and the controllability of Coulomb oscillation peak position are also successfully demonstrated, which are essential conditions for the integration of a single-electron tunneling transistor circuit. Further miniaturization and optimization of the proposed device will make room temperature designable single-electron tunneling transistors possible in the foreseeable future.open101

Pharmacokinetics of Amitriptyline Demethylation;A Crossover Study with Single Doses of Amitriptyline and Nortriptyline

A single dose crossover pharmacokinetic study of amitriptyline and nortriptyline was done to find out the extent of first-pass metabolism to nortriptyline after amitripyline administration, and the contribution of nortriptyline during amitriptyline therapy. Six healthy male volunteers took part in this study and were given single doses (50 mg) of amitriptyline and nortriptyline at more than three-week intervals. Plasma concentrations of the drugs were measured up to 48 hours. Total area under the plasma concentration-time curve (AUe) of amitriptyline (744.6±258.4 ng/ml·hl was smaller than that of nortriptyline (l497.3±589.8 ng/ml'h), and the mean terminal half-life of amitriptyline (21.8±3.9 hr) was shorter than that of nortriptyline (36.8±5.9 h). The total area under the plasma concentration-time curve of nortriptyline produced by amitriptyline administration was 498.1 ±274.5 ng/ml·h, and the fraction produced by the first-pass of amitriptyline was 33.7 ± 10.5%. From this data, it can be estimated that the average nortriptyline concentration could be about 40% of the total tricyclic antidepressants present in the plasma of patients taking multiple amitriptyline therapy at steady state. About 34% of nortriptyline is produced by first- pass effect during gastrointestinal absorption of amitriptyline to systemic circulation resulting from N-demethylation of amitriptyline in the liver. Then, the rest of the nortriptyline is formed continuously at a rate proportional to the rate of amitriptyline elimination

Effect of Sipjeondaebo-Tang on Cancer-Induced Anorexia and Cachexia in CT-26 Tumor-Bearing Mice

Cancer-associated anorexia and cachexia are a multifactorial condition described by a loss of body weight and muscle with anorexia, asthenia, and anemia. Moreover, they correlate with a high mortality rate, poor response to chemotherapy, poor performance status, and poor quality of life. Cancer cachexia is regulated by proinflammatory cytokines such as interleukin-6 (IL-6), monocyte chemoattractant protein-1 (MCP-1), and tumor necrosis factor-α (TNF-α). In addition, glucagon like peptide-1 (GIP-1), peptide YY (PYY), ghrelin, and leptin plays a crucial role in food intake. In this study, we investigated the therapeutic effects of one of the traditional herbal medicines, Sipjeondaebo-tang (Juzen-taiho-to in Japanese; SJDBT), on cancer anorexia and cachexia in a fundamental mouse cancer anorexia/cachexia model, CT-26 tumor-bearing mice. SJDBT was more significantly effective in a treatment model where it was treated after anorexia and cachexia than in a prevention model where it was treated before anorexia and cachexia on the basis of parameters such as weights of muscles and whole body and food intakes. Moreover, SJDBT inhibited a production of IL-6, MCP-1, PYY, and GLP-1 and ameliorated cancer-induced anemia. Therefore, our in vivo studies provide evidence on the role of SJDBT in cancer-associated anorexia and cachexia, thereby suggesting that SJDBT may be useful for treating cancer-associated anorexia and cachexia