The optimization problem of the shaped knife profiling

Проаналізовано переваги та недоліки процесу гарячого поділу безперервнолитої квадратної заготовки на ножицях з фасонними ножами. Відзначається доцільність проведення теоретичних досліджень розділових операцій на ножицях з використанням методу скінченних елементів (МСЕ). Метою даної роботи було визначення оптимальної форми профілювання фасонного ножа для поділу квадратної заготовки в гарячому стані шляхом математичного моделювання на базі МСЕ. Представлено методику проведення досліджень, що включали два етапи. На першому етапі використовували математичне моделювання відповідно до плану повного факторного експерименту 24 згідно виробничих умов реалізації процесу з ножами що мали значення кута розкриття ножів 90…98° та ухилу контактних поверхонь 3…11°. При обробці даних моделювання були отримані три відносних параметра, два з яких характеризують зминання (затяжка) і загин кінців розкату, і ще один – ромбічність торцевої поверхні. Для кожного з параметрів, отримані лінійні рівняння регресії як функція температури різання та розмірів заготовок, величини кута розкриття ножів та ухилу контактних поверхонь. На другому етапі дослідження вирішували оптимізаційну задачу пошуку мінімуму цільової функції – ромбічності. За результатами відзначено, що оптимальні значення профілювання ножів залежать від вимог, що висуваються до якості зрізу. Введено фактор граничного відхилення зминання і загину кінців, встановлений діапазон його значень та проаналізовано вплив на оптимальні параметри. Запропоновано величини кута розкриття ножів та ухилу контактних поверхонь, за умови мінімізації граничного відхилення зминання і загину кінців у досліджуваних діапазонах температур та розмірів заготовок. Отримано залежності параметрів профілювання ножів від граничного відхилення зминання і загину кінців заготовок після поділу. Результати роботи можуть бути рекомендовані для використання при прийнятті проектно-конструкторських і технологічних рішень в питаннях гарячого розділення безперервнолитої квадратної заготовки фасонними ножами на кут.The advantages and disadvantages of the process of separation in hot condition of billet with square shape by special profiled knives were analyzed. There is expediency of carrying out theoretical researches the separating operations by shears based on finite elements method (FEM) is noted. The purpose of the work was to determine the optimal shape for make form a profiled knife for separating a square billet in a hot state by simulating based on the FEM. A methodology of study realization consisting of two stages is presented. At the first stage, simulating was used in accordance with the plan of the full factorial experiment 24 according to the technological environment for the process implementation with knives having a knife opening angle of 90...98° and a contact surface inclination of 3...11°. At the processing the simulation results, three relative parameters were obtained. Two parameters characterize the crumpling (tightening) and bending of the billet ends, and one more – the rhomboidity of the end surface. For each of the parameters, the linear regression equations obtained as a function of cutting temperature and billet sizes, the knife opening angle and contact surface inclination. At the second stage of the study, the optimization problem of determining the minimum of the objective function – rhomboidity – was solved. According to the results, it was noted that the optimal values of the profiling of knives depend on the requirements for the quality of the cut. The factor of the maximum deviation of crumpling and bending of the ends is introduced. The range of its values is established and the influence on the optimal parameters is analyzed. The values of the knife opening angle and contact surface inclination are proposed, provided that the maximum deviation of the crumpling and bending of the ends, at the studied temperature ranges and sizes of the billets, is minimized. The dependences of the optimal parameters of the profiling of knives on the maximum deviation of the crumpling and bending of the ends of the billets after separation are obtained. Results of work can be recommended for use to get solutions in design and technology questions of hot separation square billet by profiled knife on the angle

Development of high-speed directly-modulated DFB and DBR lasers with surface gratings

The conventional distributed feedback and distributed Bragg reflector edge-emitting lasers employ buried gratings, which require two or more epitaxial growth steps. By using lateral corrugations of the ridge-waveguide as surface gratings the epitaxial overgrowth is avoided, reducing the fabrication complexity, increasing the yield and reducing the fabrication cost. The surface gratings are applicable to different materials, including Al-containing ones and can be easily integrated in complex device structures and photonic circuits. Single-contact and multiple contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The paper reports on the characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 μm and presents the photon-photon resonance extended small-signal modulation bandwidth (> 20 GHz) achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter cavity lengths are expected to exceed 40 GHz smallsignal modulation bandwidth under direct modulatio

Simulation of high brightness tapered lasers

Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi- 3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyze

Do aspects of personality determine sexually responsible behaviour and contraceptive self-efficacy among adolescent females?

The purpose of this study was to examine the relationship between personality characteristics (Five-factor model; Costa & McCrae, 1992), contraceptive self­ efficacy (CSE; Levinson, 1986) and sociosexual orientation (SOl; Simpson & Gangestad, 1991b). Questionnaires were administered to 131 adolescent females aged between 16-18 years in secondary school classrooms. The questionnaires were used to identify individuals' personality characteristics, attitudes, alcohol use and demographic variables and their relationship with adolescents' perceived efficacy within sexual situations. Contraceptive self-efficacy was highly correlated with conscientiousness and neuroticism. The results showed those that are highly conscientious perceive that they dm and should be responsible for their sexual behaviour and act in accordance to these beliefs. Whereas, those with high level of neuroticism feel less in control of their sexual behaviour and are at high risk of unplanned pregnancies and sexually transmitted infections. Alcohol use was found to be highly predictive of sexual behaviour, CSE, SOl and personality characteristics. Contraceptive self-efficacy appears to be an important predictor of contraception use, personality and alcohol use. Implications for sexual education programs are discussed in terms of the results of this research

Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV)

Monolithic Integration of Collimating Fresnel Lens for Beam Quality Enhancement in Tapered High Power Laser Diode

We demonstrate, for the first time, a monolithic integrated lens for wide aperture gain-guided tapered laser beam quality enhancement by compensating the quadratic phase curvature. The 3mm long tapered laser with an output aperture of 170µm adopted in this design consists of a gain-guided tapered section and an index-guided ridge section and operated at 980nm. The lens design is implemented by focus ion beam etching (FIBE) technique, whereby the laser diode is mounted p-side up in order to facilitate the etching process. The lens is located 600µm away from the junction of the tapered and ridge sections, and is 40µm wide and 300µm long with a focal length of 800µm. The laser diode is characterised by light-current characteristics together with near- and far- field measurements before and after etching. The device is biased by current pulses of 1µs width and 0.1% duty cycle. Light-current measurement shows a drop of 10.5% in threshold current from 380mA to 340mA after the inclusion of lens. This is an evidence that the lens effectively equalised the curved phase in order to reduce the laser cavity loss by improving the coupling efficiency of backward travelling wave at the output facet. Throughout the whole current range tested, the width of near-field at waist is broadened by an average of 36% after the inclusion of lens. By successfully compensating the quadratic phase curvature of the mode, the beam divergence in the far-field is significantly narrowed by an average of 28.5%. M2 factor is improved by an average of 12

InP based lasers and optical amplifiers with wire-/dot-like active regions

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mu m. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelin

All-semiconductor master oscillator power amplifier at 1.5 um for high power applications

High power (> 0.5 W) single-mode frequency laser at 1.55 μm are nowadays key components for a large number of applications such as lidar systems, telemetry or free-space communications. For this level of power, the most suitable and available sources are solid-state lasers and fiber lasers. Semiconductor devices, which are more compact and more efficient, have still to demonstrate very high power operation to be a credible competitor. In order to obtain these levels of power with semiconductor devices, the more suitable device seems to be the Master Oscillator Power Amplifier (MOPA). Single-mode emission is generated by a Distributed Feedback laser (DFB) and the signal is then amplified with a Power Amplifier (PA). To avoid complex optical coupling and to simplify the packaging, it is possible to integrate on the same chip the laser and the amplifier. The main challenges are the fabrication of the multi-section device (at least 2 sections: one for the laser and one for the amplifier) and the reduction of the reflections. Indeed the facet and the internal reflections can create multiple cavities behavior and disturb the laser single-mode emission. In this contribution, we report the realization of a 3-section monolithic MOPA on InP