Ion mixing of markers in SiO2 and Si

The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of thin metal markers due to irradiation with 300-keV Xe+ ions. In SiO2, the mixing efficiency appears to be independent of the chemical nature of marker atoms and can be explained in terms of a linear cascade model. In Si, the mixing is found to correlate with thermally activated diffusivities of the marker species

Ion implantation and low-temperature epitaxial regrowth of GaAs

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion‐implanted GaAs and the crystal quality following capless furnace annealing at low temperature (∼400 °C). The implantation‐induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantation produced a fully amorphous surface layer the main parameter governing the regrowth was the amorphous thickness. Formation of microtwins after annealing was observed when the initial amorphous layer was thicker than 400 Å. Also, the number of extended residual defects after annealing increased linearly with the initial amorphous thickness and extrapolation of that curve predicts good regrowth of very thin (<400 Å) GaAs amorphous layers produced by ion implantation. A model is presented to explain the observed features of the low‐temperature annealing of GaAs

X-ray rocking curve study of Si-implanted GaAs, Si, and Ge

Crystalline properties of Si-implanted GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other. In Si and Ge the number of defects and the strain increase linearly with dose up to the amorphous threshold. In GaAs the increase in these quantities is neither linear nor monotonic with dose. At a moderate damage level the GaAs crystal undergoes a transition from elastic to plastic behavior. This transition is accompanied by the creation of extended defects, which are not detected in Si or Ge

Epitaxial regrowth of thin amorphous GaAs layers

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the crystal quality following capless funace annealing at low temperature (~ 400 °C) in ion-implanted GaAs. From the results obtained, we concluded that the crystal quality after annealing depends strongly on the thickness of the amorphous layer generated by ion implantation and the number of residual defects increases linearly with the thickness of the implanted layer. Single-crystal regrowth free of defects detectable by megaelectron volt He + channeling was achieved for a very thin amorphous layer (<~ 400 Å)

Nonlinear strain effects in ion-implanted GaAs

The nonlinear production of strain in (100) GaAs by room-temperature ion implantation has been studied. Ions of Ne, Si, and Te were used, with energies of 300, 300, and 500 keV, respectively. Doses ranged up to those required for amorphization. Strains were monitored by x-ray double-crystal diffractometry. Rocking curves were recorded about the (400) Bragg condition and detailed depth profiles of strain perpendicular to the sample surface, epsilon[perpendicular](x), found by fitting the rocking curves with a kinematic model. These were compared with calculated profiles of the density of energy deposited in nuclear interactions, rhoE(x). Rocking curves were also recorded about the (422) Bragg condition for selected samples, to monitor strain in the directionparallel with their surfaces. At low doses, epsilon[perpendicular](x) is a linear function of rhoE(x). At doses sufficient to create strains exceeding about 0.3%, strong nonlinearities are evident and strain profiles depart significantly from the rhoE(x) curves. For the Ne and Si implantations, the profiles tend to saturate at 0.4%–0.5% over a depth of ~4000 Å. At higher doses a narrow (~2000 Å), sharply peaked region develops, with strains up to 1.5%. At still higher doses this region becomes amorphous. The Te-implanted samples do not experience appreciable saturation; rather a sharply peaked profile develops, and grows with dose to amorphicity. Curves of epsilon[perpendicular] vs rhoE were extracted by comparison of epsilon[perpendicular](x) and rhoE(x) profiles. These demonstrated that for each ion species epsilon[perpendicular] is a unique function of rhoE at all depths. Although this function has the same general form for all three implantations, the curves differ from species to species. Above epsilon[perpendicular]=0.3%, epsilon[perpendicular] increases sublinearly with rhoE for all three implanted ions. For Ne and Si, epsilon[perpendicular] becomes almost constant at 0.4%, beginning at rhoE~0.15 eV/Å^3. The strain epsilon[perpendicular] starts increasing again with rhoE at about 0.7 eV/Å^3 for Ne and 0.3 eV/Å^3 for Si, until the GaAs goes amorphous. The curve for Te shows only a slight inflection at epsilon[perpendicular]~0.3%, continuing to increase with rhoE to amorphicity. Parallel strains in the Si-implanted samples were not more than 0.02% at all values of rhoE

Strain in GaAs by low-dose ion implantation

The production of strain in (100) GaAs by low-dose ion implantation has been investigated. Implantations were conducted at room temperature with ions of He, B, C, Ne, Si, P, and Te. Energies were between 100 and 500 keV, and each species was implanted over a range of doses sufficient to create perpendicular strain below 0.3%. The perpendicular strains epsilon [perpendicular] were measured by x-ray double-crystal diffractometry about the (400) Bragg condition. Detailed depth profiles of epsilon[perpendicular] were obtained by fitting the resulting rocking curves with a kinematic model for the diffraction. For all implantations the maximum in the epsilon[perpendicular] distribution was found approximately from the separation of the lowest-angle prominent oscillation from the substrate peak. The depth profiles of perpendicular strain had the same shape as the calculated profiles of energy deposited per ion by nuclear collisions, FD. The maximum perpendicular strains scaled linearly with the dose phi of the implanted ions for all ion species. Also the ratio of maximum strain to dose was found to vary linearly with FD over more than 2 orders of magnitude in FD. We therefore conclude that epsilon[perpendicular]=KphiFD at all depths, where K is a constant. The value of K was found to be (5±1)×10^−2 Å^3/eV. Our results suggest that this holds for any ion species in the mass range 4–128 amu, with energy in the hundreds of keV, implanted into (100) GaAs at room temperature, provided the maximum strain is less than 0.3%

Strong mass effect on ion beam mixing in metal bilayers

Molecular dynamics simulations have been used to study the mechanism of ion beam mixing in metal bilayers. We are able to explain the ion induced low-temperature phase stability and melting behavior of bilayers using only a simple ballistic picture up to 10 keV ion energies. The atomic mass ratio of the overlayer and the substrate constituents seems to be a key quantity in understanding atomic mixing. The critical bilayer mass ratio of $\delta < 0.33$ is required for the occurrence of a thermal spike (local melting) with a lifetime of $\tau > 0.3$ ps at low-energy ion irradiation (1 keV) due to a ballistic mechanism. The existing experimental data follow the same trend as the simulated values.Comment: 4 pages, 4 figures, preprin

Special issue: Innovations in farming systems approaches: Introduction

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Characterization of structural changes in modern and archaeological burnt bone: Implications for differential preservation bias

Structural and thermodynamic factors which may influence burnt bone survivorship in archaeological contexts have not been fully described. A highly controlled experimental reference collection of fresh, modern bone burned in temperature increments 100–1200˚C is presented here to document the changes to bone tissue relevant to preservation using Fourier transform infrared spectroscopy and X-ray diffraction. Specific parameters investigated here include the rate of organic loss, amount of bone mineral recrystallization, and average growth in bone mineral crystallite size. An archaeological faunal assemblage ca. 30,000 years ago from Tolbor-17 (Mongolia) is additionally considered to confirm visibility of changes seen in the modern reference sample and to relate structural changes to commonly used zooarchaeological scales of burning intensity. The timing of our results indicates that the loss of organic components in both modern and archaeological bone burnt to temperatures up to 700˚C are not accompanied by growth changes in the average crystallite size of bone mineral bioapatite, leaving the small and reactive bioapatite crystals of charred and carbonized bone exposed to diagenetic agents in depositional contexts. For bones burnt to temperatures of 700˚C and above, two major increases in average crystallite size are noted which effectively decrease the available surface area of bone mineral crystals, decreasing reactivity and offering greater thermodynamic stability despite the mechanical fragility of calcined bone. We discuss the archaeological implications of these observations within the context of Tolbor-17 and the challenges of identifying anthropogenic fire