1,079 research outputs found

    Quantum plasmonic waveguides: Au nanowires

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    Combining miniaturization and good operating speed is a compelling yet crucial task for our society. Plasmonic waveguides enable the possibility of carrying information at optical operating speed while maintaining the dimension of the device in the nanometer range. Here we present a theoretical study of plasmonic waveguides extending our investigation to structures so small that Quantum Size Effects (QSE) become non negligible, namely quantum plasmonic waveguides. Specifically, we demonstrate and evaluate a blue-shift in Surface Plasmon (SP) resonance energy for an ultra-thin gold nanowire

    Magneto-optical characterization of MnxGe1-x alloys obtained by ion implantation

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    Magneto-optical Kerr effect hysteresis loops at various wavelengths in the visible/near-infrared range have been used to characterize the magnetic properties of alloys obtained by implanting Mn ions at fixed energy in a Ge matrix. The details of the hysteresis loops reveal the presence of multiple magnetic contributions. They may be attributed to the inhomogeneous distribution of the magnetic atoms and, in particular, to the known coexistence of diluted Mn in the Ge matrix and metallic Mn-rich nanoparticles embedded in it [Phys. Rev. B 73, 195207(2006)].Comment: 2 pages, 2 figures. Proceeding of the International Conference on Magnetism. Kyoto, August 20-25 200

    Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si

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    8 págs.; 7 figs.The luminescence quenching of Er in crystalline Si at temperatures between 77 and 300 K is investigated. Samples were prepared by solid-phase epitaxy of Er-implanted amorphous Si layers with or without O codoping. After epitaxial regrowth at 620°C, thermal annealing at 900°C for 30 sec was performed in order to eliminate residual defects in the regrown layer and electrically and optically activate the Er ions. Measurements of photoluminescence intensity and time decay were performed as a function of temperature and pump power. By increasing the temperature from 77 K to room temperature the luminescence intensity decreases by ~ three orders of magnitude in the Er-doped sample without O codoping, but only by a factor of 30 in the O-doped sample. In this sample room-temperature photo-luminescence and electroluminescence have been observed. Time-decay curves show a fast initial decay (~100 ¿sec) followed by a slow decay (~1 msec), with the relative intensity of these two components depending on temperature, pump power, and O codoping. The decay curves can be fitted by a sum of two exponential functions revealing the existence, in both samples, of two different classes of optically active Er sites. The concentration of excitable sites belonging to the slow-decaying class is similar for the samples with or without O codoping and rapidly decreases when temperature is increased. At temperatures above 150 K the Er luminescence is dominated by the fast-decaying centers the concentration of which is greatly increased by the presence of O. It is found that in the absence of oxygen room-temperature luminescence is hampered by the limited amount of excitable Er ions. In contrast, in O-doped samples the nonradiative decay of excited Er is the main quenching mechanism. The main factors determining the temperature quenching of Er luminescence and the crucial role of oxygen are discussed. © 1994 The American Physical Society.This work has been partially supported by GNSM-CNR. Work at the FOM Institute is part of the research program of the foundation for Fundamental Research on Matter (FOM), and was made possible by financial support from the Dutch organization for the Advancement of Research (NWO}, the Foundation for Technical Research (STW}, and the IC Technology Program (IOP Electro-optics) of the Ministry of Economic Affairs.Peer Reviewe

    Hydrogen induced optically-active defects in silicon photonic nanocavities

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    This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project. Partial financial support by the Norwegian Research Council is also acknowledged.We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.Publisher PDFPeer reviewe

    A model for the onset of transport in systems with distributed thresholds for conduction

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    We present a model supported by simulation to explain the effect of temperature on the conduction threshold in disordered systems. Arrays with randomly distributed local thresholds for conduction occur in systems ranging from superconductors to metal nanocrystal arrays. Thermal fluctuations provide the energy to overcome some of the local thresholds, effectively erasing them as far as the global conduction threshold for the array is concerned. We augment this thermal energy reasoning with percolation theory to predict the temperature at which the global threshold reaches zero. We also study the effect of capacitive nearest-neighbor interactions on the effective charging energy. Finally, we present results from Monte Carlo simulations that find the lowest-cost path across an array as a function of temperature. The main result of the paper is the linear decrease of conduction threshold with increasing temperature: Vt(T)=Vt(0)(14.8kBTP(0)/pc)V_t(T) = V_t(0) (1 - 4.8 k_BT P(0)/ p_c) , where 1/P(0)1/P(0) is an effective charging energy that depends on the particle radius and interparticle distance, and pcp_c is the percolation threshold of the underlying lattice. The predictions of this theory compare well to experiments in one- and two-dimensional systems.Comment: 14 pages, 10 figures, submitted to PR

    Photonic Torque Microscopy of the Nonconservative Force Field for Optically Trapped Silicon Nanowires

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    We measure, by photonic torque microscopy, the nonconservative rotational motion arising from the transverse components of the radiation pressure on optically trapped, ultrathin silicon nanowires. Unlike spherical particles, we find that nonconservative effects have a significant influence on the nanowire dynamics in the trap. We show that the extreme shape of the trapped nanowires yields a transverse component of the radiation pressure that results in an orbital rotation of the nanowire about the trap axis. We study the resulting motion as a function of optical power and nanowire length, discussing its size-scaling behavior. These shape-dependent nonconservative effects have implications for optical force calibration and optomechanics with levitated nonspherical particles

    MicroRNA-21 is Induced by Rapamycin in a Model of Tuberous Sclerosis (TSC) and Lymphangioleiomyomatosis (LAM)

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    Lymphangioleiomyomatosis (LAM), a multisystem disease of women, is manifest by the proliferation of smooth muscle-like cells in the lung resulting in cystic lung destruction. Women with LAM can also develop renal angiomyolipomas. LAM is caused by mutations in the tuberous sclerosis complex genes (TSC1 or TSC2), resulting in hyperactive mammalian Target of Rapamycin (mTOR) signaling. The mTOR inhibitor, Rapamycin, stabilizes lung function in LAM and decreases the volume of renal angiomyolipomas, but lung function declines and angiomyolipomas regrow when treatment is discontinued, suggesting that factors induced by mTORC1 inhibition may promote the survival of TSC2-deficient cells. Whether microRNA (miRNA, miR) signaling is involved in the response of LAM to mTORC1 inhibition is unknown. We identified Rapamycin-dependent miRNA in LAM patient angiomyolipoma-derived cells using two separate screens. First, we assayed 132 miRNA of known significance to tumor biology. Using a cut-off of >1.5-fold change, 48 microRNA were Rapamycin-induced, while 4 miRs were downregulated. In a second screen encompassing 946 miRNA, 18 miRs were upregulated by Rapamycin, while eight were downregulated. Dysregulation of miRs 29b, 21, 24, 221, 106a and 199a were common to both platforms and were classified as candidate “RapamiRs.” Validation by qRT-PCR confirmed that these microRNA were increased. miR-21, a pro-survival miR, was the most significantly increased by mTOR-inhibition (p<0.01). The regulation of miR-21 by Rapamycin is cell type independent. mTOR inhibition promotes the processing of the miR-21 transcript (pri-miR-21) to a premature form (pre-miR-21). In conclusion, our findings demonstrate that Rapamycin upregulates multiple miRs, including pro-survival miRs, in TSC2-deficient patient-derived cells. The induction of miRs may contribute to the response of LAM and TSC patients to Rapamycin therapy

    Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application

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    A combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. We demonstrate that with a 0.9 μm thick absorber layer the optical losses related to the plasmonic light trapping in the whole structure are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. An average useful absorption of 43% and an average parasitic absorption of 19% over 400-1100 nm wavelength range is measured for μc-Si:H films deposited on optimized self-assembled Ag nanoparticles coupled with a flat mirror (plasmonic back reflector). For this sample, we demonstrate a significant broadband enhancement of the useful absorption resulting in the achievement of 91% of the maximum theoretical Lambertian limit of absorption
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