Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]

This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering

Simulation of time-varying ascent loads on arrays of shuttle tiles in a large transonic tunnel

For abstract, see A82-24682

Representing Structural Information of Helical Charge Distributions in Cylindrical Coordinates

Structural information in the local electric field produced by helical charge distributions, such as dissolved DNA, is revealed in a straightforward manner employing cylindrical coordinates. Comparison of structure factors derived in terms of cylindrical and helical coordinates is made. A simple coordinate transformation serves to relate the Green function in cylindrical and helical coordinates. We also compare the electric field on the central axis of a single helix as calculated in both systems.Comment: 11 pages in plain LaTex, no figures. Accepted for publication in PRE March, 199

Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high resolution cathodoluminescence (CL) hyperspectral imaging. Plan-view microscopy reveals partially coalesced GaN layers with a sub-μm scale domain structure and distinct grain boundaries, which is mapped using CL spectroscopy showing high strain at the grain boundaries. Cross-sectional areas spanning the partially coalesced GaN and underlying nanocolumns are mapped using CL, revealing that the GaN bandedge peak shifts by about 25 meV across the partially coalesced layer of ∼2 μm thick. The GaN above the nanocolumns remains under tensile strain, probably due to Si out-diffusion from the mask or substrate. The cross-sectional data show how this strain is reduced towards the surface of the partially coalesced layer, possibly due to misalignment between adjacent partially coalesced regions

Mechanism of enhanced light output in InGaN-based microlight emitting diodes

Micro-light emitting diode (LED) arrays with diameters of 4 to 20 mum have been fabricated and were found to be much more efficient light emitters compared to their broad-area counterparts, with up to five times enhancement in optical power densities. The possible mechanisms responsible for the improvement in performance were investigated. Strain relaxation in the microstructures as measured by Raman spectroscopy was not observed, arguing against theories of an increase in internal quantum efficiency due to a reduction of the piezoelectric field put forward by other groups. Optical microscope images show intense light emission at the periphery of the devices, as a result of light scattering off the etched sidewalls. This increases the extraction efficiency relative to broad area devices and boosts the forward optical output. In addition, spectra of the forward emitted light reveal the presence of resonant cavity modes [whispering gallery (WG) modes in particular] which appear to play a role in enhancing the optical output

Spiral vortices traveling between two rotating defects in the Taylor-Couette system

Numerical calculations of vortex flows in Taylor-Couette systems with counter rotating cylinders are presented. The full, time dependent Navier-Stokes equations are solved with a combination of a finite difference and a Galerkin method. Annular gaps of radius ratio $\eta=0.5$ and of several heights are simulated. They are closed by nonrotating lids that produce localized Ekman vortices in their vicinity and that prevent axial phase propagation of spiral vortices. Existence and spatio temporal properties of rotating defects, of modulated Ekman vortices, and of the spiral vortex structures in the bulk are elucidated in quantitative detail.Comment: 9 pages, 9 figure

Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal

Collective excitations of atomic Bose-Einstein condensates

We apply linear-response analysis of the Gross-Pitaevskii equation to obtain the excitation frequencies of a Bose-Einstein condensate confined in a time-averaged orbiting potential trap. Our calculated values are in excellent agreement with those observed in a recent experiment.Comment: 11 pages, 2 Postscript figures, uses psbox.tex for automatic figure inclusion. More info at http://amo.phy.gasou.edu/bec.htm

Metallization of Fluid Hydrogen

The electrical resistivity of liquid hydrogen has been measured at the high dynamic pressures, densities and temperatures that can be achieved with a reverberating shock wave. The resulting data are most naturally interpreted in terms of a continuous transition from a semiconducting to a metallic, largely diatomic fluid, the latter at 140 GPa, (ninefold compression) and 3000 K. While the fluid at these conditions resembles common liquid metals by the scale of its resistivity of 500 micro-ohm-cm, it differs by retaining a strong pairing character, and the precise mechanism by which a metallic state might be attained is still a matter of debate. Some evident possibilities include (i) physics of a largely one-body character, such as a band-overlap transition, (ii) physics of a strong-coupling or many-body character,such as a Mott-Hubbard transition, and (iii) processes in which structural changes are paramount.Comment: 12 pages, RevTeX format. Figures available on request; send mail to: [email protected] To appear: Philosophical Transaction of the Royal Society

Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

A study of AlInGaN epilayers, grown by plasma-assisted molecular beam epitaxy, was performed using spatially resolved x-ray microanalysis and luminescence spectroscopy in order to investigate competition between the incorporation of In, Al, and Ga as a function of the growth temperature in the 565-660 °C range and the nominal AlN mole fraction. The samples studied have AlN and InN mole fractions in the ranges of 4%-30% and 0%-16%, respectively. Composition measurements show the effect of decreasing temperature to be an increase in the incorporation of InN, accompanied by a small but discernible decrease in the ratio of GaN to AlN mole fractions. The incorporation of In is also shown to be significantly increased by decreasing the Al mole fraction. Optical emission peaks, observed by cathodoluminescence mapping and by photoluminescence, provide further information on the epilayer compositions as a function of substrate temperature, and the dependencies of peak energy and linewidth are plotted