156 research outputs found

    Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

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    The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified.Comment: 13 pages, 3 figures, PostScript. Submitted to Applied Physics Letter

    Chemical and biological sensors using polycrystalline silicon TFTs

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    Exploring low-degree nodes first accelerates network exploration

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    We consider information diffusion on Web-like networks and how random walks can simulate it. A well-studied problem in this domain is Partial Cover Time, i.e., the calculation of the expected number of steps a random walker needs to visit a given fraction of the nodes of the network. We notice that some of the fastest solutions in fact require that nodes have perfect knowledge of the degree distribution of their neighbors, which in many practical cases is not obtainable, e.g., for privacy reasons. We thus introduce a version of the Cover problem that considers such limitations: Partial Cover Time with Budget. The budget is a limit on the number of neighbors that can be inspected for their degree; we have adapted optimal random walks strategies from the literature to operate under such budget. Our solution is called Min-degree (MD) and, essentially, it biases random walkers towards visiting peripheral areas of the network first. Extensive benchmarking on six real datasets proves that the---perhaps counter-intuitive strategy---MD strategy is in fact highly competitive wrt. state-of-the-art algorithms for cover

    Polycrystalline Silicon ISFETs on Glass Substrate

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    The Ion Sensitive Field Effect Transistor (ISFET) operation based onpolycrystalline silicon thin film transistors is reported. These devices can be fabricated oninexpensive disposable substrates such as glass or plastics and are, therefore, promisingcandidates for low cost single-use intelligent multisensors. In this work we have developedan extended gate structure with PE-CVD Si3N4 deposited on top of a conductor, which alsoprovides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity(54 mV/pH) and stable operation have been achieved. Temperature effects have also beencharacterized. A penicillin sensor has been fabricated by functionalizing the sensing areawith penicillinase. The shift increases almost linearly upon the increase of penicillinconcentration until saturation is reached for ~ 7 mM. Poly-Si TFT structures with a goldsensing area have been also successfully applied to field-effect detection of DNA

    Polycrystalline silicon ion sensitive field effect transistors

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    Continuous pulse advances in the negative ion source NIO1

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    Consorzio RFX and INFN-LNL have designed, built and operated the compact radiofrequency negative ion source NIO1 (Negative Ion Optimization phase 1) with the aim of studying the production and acceleration of H- ions. In particular, NIO1 was designed to keep plasma generation and beam extraction continuously active for several hours. Since 2020 the production of negative ions at the plasma grid (the first grid of the acceleration system) has been enhanced by a Cs layer, deposited though active Cs evaporation in the source volume. For the negative ion sources applied to fusion neutral beam injectors, it is essential to keep the beam current and the fraction of co-extracted electrons stable for at least 1 h, against the consequences of Cs sputtering and redistribution operated by the plasma. The paper presents the latest results of the NIO1 source, in terms of caesiation process and beam performances during continuous (6{\div}7 h) plasma pulses. Due to the small dimensions of the NIO1 source (20 x (diam.)10 cm), the Cs density in the volume is high (10^15 \div 10^16 m^-3) and dominated by plasma-wall interaction. The maximum beam current density and minimum fraction of co-extracted electrons were respectively about 30 A/m^2 and 2. Similarly to what done in other negative ion sources, the plasma grid temperature in NIO1 was raised for the first time, up to 80 {\deg}C, although this led to a minimal improvement of the beam current and to an increase of the co-extracted electron current.Comment: 11 pages, 7 figures. Contributed paper for the 8th International symposium on Negative Ions, Beams and Sources - NIBS'22. Revision 1 of the preprint under evaluation at Journal of Instrumentation (JINST

    Atomic-scale authentication using resonant tunnelling diodes

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    The rapid development of technology has provided a wealth of resources enabling the trust of everyday interactions to be undermined. Authentication schemes aim to address this challenge by providing proof of identity. This can be achieved by using devices that, when challenged, give unique but reproducible responses. At present, these distinct signatures are commonly generated by physically unclonable functions, or PUFs. These devices provide a straightforward measurement of a physical characteristic of their structure that has inherent randomness, due to imperfections in the manufacturing process. These hard-to-predict physical responses can generate a unique identity that can be used for authentication without relying on the secrecy of stored data. However, the classical design of these devices limits both their size and security. Here we show that the extensively studied problematic fluctuations in the current-voltage measurements of resonant tunnelling diodes (RTDs) provide an uncomplicated, robust measurement that can function as a PUF without conventional resource limitations. This is possible due to quantum tunnelling within the RTD, and on account of these room temperature quantum effects, we term such devices QUFs - quantum unclonable functions. As a result of the current-voltage spectra being dependent on the atomic structure and composition of the nanostructure within the RTD, each device provides a high degree of uniqueness, whilst being impossible to clone or simulate, even with state-of-the-art technology. We have thus created PUF-like devices requiring the fewest resources which make use of quantum phenomena in a highly manufacturable electronic device operating at room temperature. Conventional spectral analysis techniques, when applied to our QUFs, will enable reliable generation of unpredictable unique identities which can be employed in advanced authentication systems
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