IDEF5 Ontology Description Capture Method: Concept Paper

The results of research towards an ontology capture method referred to as IDEF5 are presented. Viewed simply as the study of what exists in a domain, ontology is an activity that can be understood to be at work across the full range of human inquiry prompted by the persistent effort to understand the world in which it has found itself - and which it has helped to shape. In the contest of information management, ontology is the task of extracting the structure of a given engineering, manufacturing, business, or logistical domain and storing it in an usable representational medium. A key to effective integration is a system ontology that can be accessed and modified across domains and which captures common features of the overall system relevant to the goals of the disparate domains. If the focus is on information integration, then the strongest motivation for ontology comes from the need to support data sharing and function interoperability. In the correct architecture, an enterprise ontology base would allow th e construction of an integrated environment in which legacy systems appear to be open architecture integrated resources. If the focus is on system/software development, then support for the rapid acquisition of reliable systems is perhaps the strongest motivation for ontology. Finally, ontological analysis was demonstrated to be an effective first step in the construction of robust knowledge based systems

Research accomplished at the Knowledge Based Systems Lab: IDEF3, version 1.0

An overview is presented of the foundations and content of the evolving IDEF3 process flow and object state description capture method. This method is currently in beta test. Ongoing efforts in the formulation of formal semantics models for descriptions captured in the outlined form and in the actual application of this method can be expected to cause an evolution in the method language. A language is described for the representation of process and object state centered system description. IDEF3 is a scenario driven process flow modeling methodology created specifically for these types of descriptive activities

Total and partial cross sections of the 112^{112}Sn(α,γ\alpha,\gamma)116^{116}Te reaction measured via in-beam γ\gamma-ray spectroscopy

An extended database of experimental data is needed to address uncertainties of the nuclear-physics input parameters for Hauser-Feshbach calculations. Especially $\alpha$+nucleus optical model potentials at low energies are not well known. The in-beam technique with an array of high-purity germanium (HPGe) detectors was successfully applied to the measurement of absolute cross sections of an ($\alpha$,$\gamma$) reaction on a heavy nucleus at sub-Coulomb energies. The total and partial cross-section values were measured by means of in-beam $\gamma$-ray spectroscopy. Total and partial cross sections were measured at four different $\alpha$-particle energies from $E_\alpha = 10.5$ MeV to $E_\alpha = 12$ MeV. The measured total cross-section values are in excellent agreement with previous results obtained with the activation technique, which proves the validity of the applied method. The experimental data was compared to Hauser-Feshbach calculations using the nuclear reaction code TALYS. A modified version of the semi-microscopic $\alpha$+nucleus optical model potential OMP 3, as well as modified proton and $\gamma$ widths, are needed in order to obtain a good agreement between experimental data and theory. It is found, that a model using a local modification of the nuclear-physics input parameters simultaneously reproduces total cross sections of the $^{112}$Sn($\alpha$,$\gamma$) and $^{112}$Sn($\alpha$,p) reactions. The measurement of partial cross sections turns out to be very important in this case in order to apply the correct $\gamma$-ray strength function in the Hauser-Feshbach calculations. The model also reproduces cross-section values of $\alpha$-induced reactions on $^{106}$Cd, as well as of ($\alpha$,n) reactions on $^{115,116}$Sn, hinting at a more global character of the obtained nuclear-physics input.Comment: 8 pages, 9 figure

Theoretical foundations for information representation and constraint specification

Research accomplished at the Knowledge Based Systems Laboratory of the Department of Industrial Engineering at Texas A&M University is described. Outlined here are the theoretical foundations necessary to construct a Neutral Information Representation Scheme (NIRS), which will allow for automated data transfer and translation between model languages, procedural programming languages, database languages, transaction and process languages, and knowledge representation and reasoning control languages for information system specification

Erosion and deposition in interplain channels of the Maury channel system

Large turbidity currents originating on the insular margin of southern lceland have flowed clown a 2 500 km-long pathway comprising rise valleys, unchanneled plains and segments of erosional and depositional deep-sea channels that are collectively called the Maury Channel system. Two steep interplain reaches of the channel have been eut up to 100 m through volcanogenic turbidites of probable La te Pleistocene age. Near-bottom observations with side-scan sonars and profllers across the upper channels (at 59°24\u27N, 18°50\u27W, 2 750 m depth) and at the lower interplain channel (around 56°23\u27N, 24°25\u27W, 3 340 m depth) defmed their structure and morphology. The upper channels, and a tributary to the lower channel, start as broad, shallow depressions that deepen and narrow downstream. The lower channel bas a pattern of anastomosing branches that probably evolved by head ward extension of low-angle tribu taries to the original sinuous channel, and its branches are at different stages of development. Several hundred bottom photographs show well-indurated rocks on channel walls and floors, with such flysch-like characteristics as cyclic graded bedding, clastic dikes, and syndepositional deformation. The lower-channel branches have been eut by turbidity currents with speeds of 5- 12 rn/sec., and combined discharges exceeding 1 x 106 m3 /sec. Bedrock erosion in and around the channels bas proceeded by intense corrasion and fluid stressing, and is marked by such small-scale effects as rock polishing, fluting, pot-holing and ledge recession. Rockfalls have caused retreat of steep channel walls, and conglomerate or pcbbly mudstone deposits suggest that debris flows have been locally active. Sorne coarse debris delivered by these processes and clay halls torn from semi-lithifled outcrops remain in the channels, but the channel f1ll is generally thin, with a patch y veneer of pelagie mud that bas accumulated since the last major turbidity current event. The surfaces of the unconsolidated s~diment have been smoothed and lineated, or moulded into seo ur moats and occasional fields of ripples, by thermohaline currents

A realization of the Hecke algebra on the space of period functions for Gamma_0(n)

The standard realization of the Hecke algebra on classical holomorphic cusp forms and the corresponding period polynomials is well known. In this article we consider a nonstandard realization of the Hecke algebra on Maass cusp forms for the Hecke congruence subgroups Gamma_0(n). We show that the vector valued period functions derived recently by Hilgert, Mayer and Movasati as special eigenfunctions of the transfer operator for Gamma_0(n) are indeed related to the Maass cusp forms for these groups. This leads also to a simple interpretation of the ``Hecke like'' operators of these authors in terms of the aforementioned non standard realization of the Hecke algebra on the space of vector valued period functions.Comment: 30 pages; corrected typos and fixed incomplete proofs in section

XPS study of the chemical structure of the nickel/silicon interface

The chemical nature of the Ni/Si, Ni/Ni_(2)Si and Si/Ni_(2)Si interfaces have been investigated using x‐ray photoelectron spectroscopy. Peak position, line shapes, and envelope intensities are used to probe the compositional structure of these systems. Two approaches have been employed: one approach examines the advancing planar silicide front by dynamically monitoring the in situ formation of Ni_(2)Si. This has the advantage of allowing examination of a realistic interface which is bounded on either side by an extended solid. The second approach follows the development of the Si/Ni interface using UHV depositions of thin layers of Ni on Si . ^(4)He^+ backscattering is used to follow the progression of the thin film reaction and to provide quantitative information on atomic composition. These experiments demonstrate that the Ni/Ni_(2)Si interface consists of a Ni‐rich silicide transitional phase while the Si/Ni_(2)Si interface shows a transitional structure which is correspondingly Si‐rich. Intensity analysis indicates that these interfacial regions are at least 22 Å wide for α‐Si substrates and 9–14 Å wide for crystalline Si. The as‐deposited Ni/Si interface cannot be described as a unique single‐phase, but rather as a chemically graded transitional region showing a composition which varies from Si‐rich to Ni‐rich silicides