PAH emission from Nova Cen 1986

The discovery of broad emission features between 3.2 and 3.6 microns were reported in the spectrum of Nova Cen 1986 (V842 Cen) some 300 days following outburst and remaining prominent for several months. The general characteristics of these features are similar to those attributed to polycyclic hydrocarbon (PAH) molecules in other dusty sources, although the relative strengths are different, and these observations provide the first clear evidence for molecular constituents other than graphite particles in the ejecta of novae

Calcitonin receptor-like receptor is expressed on gastrointestinal immune cells

Background/Aims: Pharmacological and morphological studies suggest that the gut mucosal immune system and local neuropeptide-containing neurones interact. We aimed to determine whether gut immune cells are targets for calcitonin gene-related peptide (CGRP), which has potent immune regulatory properties. Methods: Using density gradient centrifugation, rat lamina propria mononuclear cells (LP-MNCs) and intra-epithelial lymphocytes (IELs) were isolated. RT-PCR was employed for the detection of mRNA of rat calcitonin receptor-like receptor (CRLR), which is considered to represent the pharmacologically defined CGRP receptor-1 subtype, as well as mRNA of the receptor activity-modifying proteins, which are essential for CRLR function and determine ligand specificity. A radioreceptor assay was employed for the detection of specific CGRP binding sites. Results: RT-PCR and DNA sequencing showed that LP-MNCs and IELs express CRLR. Incubation of isolated LP-MNCs with radiolabelled alphaCGRP revealed the existence of specific binding sites for CGRP. Conclusion: These novel data indicate that mucosal immune cells of the rat gut are a target for CGRP and provide significant evidence that CGRP functions as an immune regulator in the gut mucosa. Copyright (C) 2002 S. Karger AG, Basel

The Wide Field Spectrograph (WiFeS)

This paper describes the Wide Field Spectrograph (WiFeS) under construction at the Research School of Astronomy and Astrophysics (RSAA) of the Australian National University (ANU) for the ANU 2.3m telescope at the Siding Spring Observatory. WiFeS is a powerful integral field, double-beam, concentric, image-slicing spectrograph designed to deliver excellent thoughput, wavelength stability, spectrophotometric performance and superb image quality along with wide spectral coverage throughout the 320-950 nm wavelength region. It provides a 25x38 arcsec. field with 0.5 arcsec. sampling along each of twenty five 38X1 arcsec slitlets. The output format is optimized to match the 4096x4096 pixel CCD detectors in each of two cameras individually optimized for the blue and the red ends of the spectrum, respectively. A process of "interleaved nod-and-shuffle" will be applied to permit quantum noise-limited sky subtraction. Using VPH gratings, spectral resolutions of 3000 and 7000 are provided. The full spectral range is covered in a single exposure at R=3000, and in two exposures in the R=7000 mode. The use of transmissive coated optics, VPH gratings and optimized mirror coatings ensures a throughput (including telescope atmosphere and detector) > 30% over a wide spectral range. The concentric image-slicer design ensures an excellent and uniform image quality across the full field. To maximize scientific return, the whole instrument is configured for remote observing, pipeline data reduction, and the accumulation of calibration image libraries.Comment: Accepted for publication in Astrophysics & Space Science, 16 pages, 14 figure

Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures

Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1 – xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V – 1 s – 1 at a carrier density of 3.3 × 1011 cm – 2 for x = 0.2 and 300 cm2 V – 1 s – 1 at 6.3 × 1011 cm – 2 for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control

Self-esteem outcomes over a summer camp for obese youth.

Variation in the existing literature on the psychosocial benefits of weight loss in obese youth results, in part, from methodological limitations and modest weight loss. Accordingly, this research assessed perceived self-competence and low self-esteem during an intensive weight loss programme in a large sample of obese youth and related these to starting weight, gender and weight loss.Over 4 years, 303 obese male and female adolescents (body mass index [BMI] 34.3 kg m(-2) , BMI standard deviation score 2.99; 14.7 years) attended a residential weight loss camp for a mean duration of 31 d. Outcome variables included dimensional self-esteem (Harter) and weight change over the camp.At the start of camp, obese youth scored highest on social acceptance and lowest on physical appearance and athletic competence. Global self-worth and most domains of self-competence improved significantly over the intervention. The proportion with low global self-worth reduced from 35% to 16%, but there was little change in the proportion reporting high self-competence (23%). Mean weight loss was -5.5 kg (BMI standard deviation scores -0.25) with boys and those heaviest at the start losing most. Weight loss was significantly correlated with improved physical appearance (r = 0.13) and athletic competence (r = 0.19), but not global self-worth.This intensive weight loss intervention yielded significant psychological benefit, especially in self-competence and among individuals achieving most weight loss. The weak association with weight loss suggests the influence of other contributing environmental or social features that should be the focus of further research

Semi-Streaming Set Cover

This paper studies the set cover problem under the semi-streaming model. The underlying set system is formalized in terms of a hypergraph $G = (V, E)$ whose edges arrive one-by-one and the goal is to construct an edge cover $F \subseteq E$ with the objective of minimizing the cardinality (or cost in the weighted case) of $F$. We consider a parameterized relaxation of this problem, where given some $0 \leq \epsilon < 1$, the goal is to construct an edge $(1 - \epsilon)$-cover, namely, a subset of edges incident to all but an $\epsilon$-fraction of the vertices (or their benefit in the weighted case). The key limitation imposed on the algorithm is that its space is limited to (poly)logarithmically many bits per vertex. Our main result is an asymptotically tight trade-off between $\epsilon$ and the approximation ratio: We design a semi-streaming algorithm that on input graph $G$, constructs a succinct data structure $\mathcal{D}$ such that for every $0 \leq \epsilon < 1$, an edge $(1 - \epsilon)$-cover that approximates the optimal edge \mbox{($1$-)cover} within a factor of $f(\epsilon, n)$ can be extracted from $\mathcal{D}$ (efficiently and with no additional space requirements), where $$f(\epsilon, n) = \left\{ \begin{array}{ll} O (1 / \epsilon), & \text{if } \epsilon > 1 / \sqrt{n} \\ O (\sqrt{n}), & \text{otherwise} \end{array} \right. \, .$$ In particular for the traditional set cover problem we obtain an $O(\sqrt{n})$-approximation. This algorithm is proved to be best possible by establishing a family (parameterized by $\epsilon$) of matching lower bounds.Comment: Full version of the extended abstract that will appear in Proceedings of ICALP 2014 track

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication