884 research outputs found

    Spin splitting of X-related donor impurity states in an AlAs barrier

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    We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be gI_{I}= 2.2 ±\pm 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anisotropic in the growth plane

    Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

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    The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally-induced charge displacement between donor sites. Our results challenge the accepted understanding of quantum interference effects in nanostructures.Comment: 8 pages, 5 figures, Submitted to Physical Review

    Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

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    We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.Comment: 4 pages, 2 figure

    Numerical Construction of LISS Lyapunov Functions under a Small Gain Condition

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    In the stability analysis of large-scale interconnected systems it is frequently desirable to be able to determine a decay point of the gain operator, i.e., a point whose image under the monotone operator is strictly smaller than the point itself. The set of such decay points plays a crucial role in checking, in a semi-global fashion, the local input-to-state stability of an interconnected system and in the numerical construction of a LISS Lyapunov function. We provide a homotopy algorithm that computes a decay point of a monotone op- erator. For this purpose we use a fixed point algorithm and provide a function whose fixed points correspond to decay points of the monotone operator. The advantage to an earlier algorithm is demonstrated. Furthermore an example is given which shows how to analyze a given perturbed interconnected system.Comment: 30 pages, 7 figures, 4 table

    Factor and Simplex Models for Repeated Measures: Application to Two Psychomotor Measures of Alcohol Sensitivity in Twins

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    As part of a larger study, data on arithmetic computation and motor coordination were obtained from 206 twin pairs. The twins were measured once before and three times after ingesting a standard dose of alcohol. Previous analyses ignored the time-series structure of these data. Here we illustrate the application of simplex models for the genetic analysis of covariance structures in a repeated-measures design and compare the results with factor models for the two psychomotor measures. We then present a bivariate analysis incorporating simplex processes common and specific to the two measures. Our analyses confirm the notion that there is genetic variation affecting psychomotor performance which is "switched on" in the presence of alcohol. We compare the merits of analysis of mean products versus covariance matrices and confront some practical problems that may arise in situations where the number of subjects is relatively small and where the causal structure among the latent variables places a heavy demand on the data. © 1989 Plenum Publishing Corporation

    On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

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    We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.Comment: 10 pages, 12 figure

    Self-consistent local-equilibrium model for density profile and distribution of dissipative currents in a Hall bar under strong magnetic fields

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    Recent spatially resolved measurements of the electrostatic-potential variation across a Hall bar in strong magnetic fields, which revealed a clear correlation between current-carrying strips and incompressible strips expected near the edges of the Hall bar, cannot be understood on the basis of existing equilibrium theories. To explain these experiments, we generalize the Thomas-Fermi--Poisson approach for the self-consistent calculation of electrostatic potential and electron density in {\em total} thermal equilibrium to a {\em local equilibrium} theory that allows to treat finite gradients of the electrochemical potential as driving forces of currents in the presence of dissipation. A conventional conductivity model with small values of the longitudinal conductivity for integer values of the (local) Landau-level filling factor shows that, in apparent agreement with experiment, the current density is localized near incompressible strips, whose location and width in turn depend on the applied current.Comment: 9 pages, 7 figure

    Bifurcations and chaos in semiconductor superlattices with a tilted magnetic field

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    We study the effects of dissipation on electron transport in a semiconductor superlattice with an applied bias voltage and a magnetic field that is tilted relative to the superlattice axis.In previous work, we showed that although the applied fields are stationary,they act like a THz plane wave, which strongly couples the Bloch and cyclotron motion of electrons within the lowest miniband. As a consequence,the electrons exhibit a unique type of Hamiltonian chaos, which creates an intricate mesh of conduction channels (a stochastic web) in phase space, leading to a large resonant increase in the current flow at critical values of the applied voltage. This phase-space patterning provides a sensitive mechanism for controlling electrical resistance. In this paper, we investigate the effects of dissipation on the electron dynamics by modifying the semiclassical equations of motion to include a linear damping term. We demonstrate that even in the presence of dissipation,deterministic chaos plays an important role in the electron transport process. We identify mechanisms for the onset of chaos and explore the associated sequence of bifurcations in the electron trajectories. When the Bloch and cyclotron frequencies are commensurate, complex multistability phenomena occur in the system. In particular, for fixed values of the control parameters several distinct stable regimes can coexist, each corresponding to different initial conditions. We show that this multistability has clear, experimentally-observable, signatures in the electron transport characteristics.Comment: 14 pages 11 figure

    Field-induced breakdown of the quantum Hall effect

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    A numerical analysis is made of the breakdown of the quantum Hall effect caused by the Hall electric field in competition with disorder. It turns out that in the regime of dense impurities, in particular, the number of localized states decreases exponentially with the Hall field, with its dependence on the magnetic and electric field summarized in a simple scaling law. The physical picture underlying the scaling law is clarified. This intra-subband process, the competition of the Hall field with disorder, leads to critical breakdown fields of magnitude of a few hundred V/cm, consistent with observations, and accounts for their magnetic-field dependence \propto B^{3/2} observed experimentally. Some testable consequences of the scaling law are discussed.Comment: 7 pages, Revtex, 3 figures, to appear in Phys. Rev.
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