10,671 research outputs found

    Superlattice barrier varactors

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    SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented

    Relativistic linear stability equations for the nonlinear Dirac equation in Bose-Einstein condensates

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    We present relativistic linear stability equations (RLSE) for quasi-relativistic cold atoms in a honeycomb optical lattice. These equations are derived from first principles and provide a method for computing stabilities of arbitrary localized solutions of the nonlinear Dirac equation (NLDE), a relativistic generalization of the nonlinear Schr\"odinger equation. We present a variety of such localized solutions: skyrmions, solitons, vortices, and half-quantum vortices, and study their stabilities via the RLSE. When applied to a uniform background, our calculations reveal an experimentally observable effect in the form of Cherenkov radiation. Remarkably, the Berry phase from the bipartite structure of the honeycomb lattice induces a boson-fermion transmutation in the quasi-particle operator statistics.Comment: 6 pages, 3 figure

    Caracterização molecular de isolados de Fusarium oxysporum f. sp. cubense no Brasil.

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    Segundo a FAO o Brasil foi em 2010 o quinto produtor de banana do mundo e o maior do hemisfério sul. A produção brasileira em 2010 foi de 7,0 milhões de toneladas em 487 mil hectares

    Training deep neural density estimators to identify mechanistic models of neural dynamics

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    Mechanistic modeling in neuroscience aims to explain observed phenomena in terms of underlying causes. However, determining which model parameters agree with complex and stochastic neural data presents a significant challenge. We address this challenge with a machine learning tool which uses deep neural density estimators-- trained using model simulations-- to carry out Bayesian inference and retrieve the full space of parameters compatible with raw data or selected data features. Our method is scalable in parameters and data features, and can rapidly analyze new data after initial training. We demonstrate the power and flexibility of our approach on receptive fields, ion channels, and Hodgkin-Huxley models. We also characterize the space of circuit configurations giving rise to rhythmic activity in the crustacean stomatogastric ganglion, and use these results to derive hypotheses for underlying compensation mechanisms. Our approach will help close the gap between data-driven and theory-driven models of neural dynamics

    Competing phases in the high field phase diagram of (TMTSF)2_2ClO4_4

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    A model is presented for the high field phase diagram of (TMTSF)2_2ClO4_4, taking into account the anion ordering, which splits the Fermi surface in two bands. For strong enough field, the largest metal-SDW critical temperature corresponds to the N=0 phase, which originates from two intraband nesting processes. At lower temperature, the competition between these processes puts at disadvantage the N=0 phase vs. the N=1 phase, which is due to interband nesting. A first order transition takes then place from the N=0 to N=1 phase. We ascribe to this effect the experimentally observed phase diagrams.Comment: 5 pages, 3 figures (to appear in Phys. Rev. Lett.
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