Macro- and micro-strain in GaN nanowires on Si(111)

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry

Correlative Fluorescence- and Electron Microscopy of Whole Breast Cancer Cells Reveals Different Distribution of ErbB2 Dependent on Underlying Actin

Epidermal growth factor receptor 2 (ErbB2) is found overexpressed in several cancers, such as gastric, and breast cancer, and is, therefore, an important therapeutic target. ErbB2 plays a central role in cancer cell invasiveness, and is associated with cytoskeletal reorganization. In order to study the spatial correlation of single ErbB2 proteins and actin filaments, we applied correlative fluorescence microscopy (FM), and scanning transmission electron microscopy (STEM) to image specifically labeled SKBR3 breast cancer cells. The breast cancer cells were grown on microchips, transformed to express an actin-green fluorescent protein (GFP) fusion protein, and labeled with quantum dot (QD) nanoparticles attached to specific anti-ErbB2 Affibodies. FM was performed to identify cellular regions with spatially correlated actin and ErbB2 expression. For STEM of the intact plasma membrane of whole cells, the cells were fixed and covered with graphene. Spatial distribution patterns of ErbB2 in the actin rich ruffled membrane regions were examined, and compared to adjacent actin-low regions of the same cell, revealing an association of putative signaling active ErbB2 homodimers with actin-rich regions. ErbB2 homodimers were found absent from actin-low membrane regions, as well as after treatment of cells with Cytochalasin D, which breaks up larger actin filaments. In both latter data sets, a significant inter-label distance of 36 nm was identified, possibly indicating an indirect attachment to helical actin filaments via the formation of heterodimers of ErbB2 with epidermal growth factor receptor (EGFR). The possible attachment to actin filaments was further explored by identifying linear QD-chains in actin-rich regions, which also showed an inter-label distance of 36 nm

Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission

The basics of the self-assembled growth of GaN nanorods on Si(111) are reviewed. Morphology differences and optical properties are compared to those of GaN layers grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanorods grown on Si(111) is described. In addition, the inclusion of InGaN quantum disk structures into selfassembled GaN nanorods show clear confinement effects as a function of the quantum disk thickness. In order to overcome the properties dispersion and the intrinsic inhomogeneous nature of the self-assembled growth, the selective area growth of GaN nanorods on both, c-plane and a-plane GaN on sapphire templates, is addressed, with special emphasis on optical quality and morphology differences. The analysis of the optical emission from a single InGaN quantum disk is shown for both polar and non-polar nanorod orientation

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emissio

Efficient phosphor-free, white light emission from ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE

We fabricate and characterize novel LEDs based on InGaN/GaN nanocolumns grown on patterned substrates, leading to the periodically ordered growth of emitters directly producing white ligh

Hamilton’s principle and normal mode coupling in an aspherical planet with a fluid core

Seismic free oscillations, or normal modes, provide a convenient tool to calculate low-frequency seismograms in heterogeneous Earth models. A procedure called ‘full mode coupling’ allows the seismic response of the Earth to be computed. However, in order to be theoretically exact, such calculations must involve an infinite set of modes. In practice, only a finite subset of modes can be used, introducing an error into the seismograms. By systematically increasing the number of modes beyond the highest frequency of interest in the seismograms, we investigate the convergence of full-coupling calculations. As a rule-of-thumb, it is necessary to couple modes 1–2 mHz above the highest frequency of interest, although results depend upon the details of the Earth model. This is significantly higher than has previously been assumed. Observations of free oscillations also provide important constraints on the heterogeneous structure of the Earth. Historically, this inference problem has been addressed by the measurement and interpretation of splitting functions. These can be seen as secondary data extracted from low frequency seismograms. The measurement step necessitates the calculation of synthetic seismograms, but current implementations rely on approximations referred to as self- or group-coupling and do not use fully accurate seismograms. We therefore also investigate whether a systematic error might be present in currently published splitting functions. We find no evidence for any systematic bias, but published uncertainties must be doubled to properly account for the errors due to theoretical omissions and regularization in the measurement process. Correspondingly, uncertainties in results derived from splitting functions must also be increased. As is well known, density has only a weak signal in low-frequency seismograms. Our results suggest this signal is of similar scale to the true uncertainties associated with currently published splitting functions. Thus, it seems that great care must be taken in any attempt to robustly infer details of Earth's density structure using current splitting functions

Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted

Selective area growth (SAG) of GaN nanocolumns (NCs), making use of patterned or masked (nanoholes) substrates, yields a periodic, homogeneous distribution of nanostructures, that makes their processing much easier compared with self-assembled ones. In addition, the control on the diameter and density of NCs avoids dispersion in the electrooptical characteristics of the heterostructures based on this type of material (embedded InGaN/GaN quantum disks for example). Selective area growth using a mask with nanohole arrays has been demonstrated by rf-plasma-assisted MBE [1, 2]