11 research outputs found
Fabrication of Thin Film Resistors and Resistor Networks by a Selective Etching Process
Gold coated YBCO films for room temperature FET -sensors
264-267<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">The thin
films of high <span style="font-size:13.0pt;mso-bidi-font-size:6.0pt;
font-family:HiddenHorzOCR;mso-hansi-font-family:" times="" new="" roman";mso-bidi-font-family:="" hiddenhorzocr"="">Tc <span style="font-size:15.0pt;mso-bidi-font-size:
8.0pt;font-family:" times="" new="" roman","serif""="">cuprates are sensitive to gases at
room temperature and are highly suitable for development of silicon based FET
-sensors. However, an appropriate passivation is needed for their incorporation
in silicon-CMOS technology. Utilization of thin gold films for this purpose is
reported here for the gas sensing properties of gold-coated YBCO films. RF
magnetron sputtering is used to deposit YBCO films on oxidized silicon
substrates. These films are then coated with a thin gold layer and used to
construct discrete structures of capacitively controlled field effect
transistor
<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">(CCFET)
sensors to investigate their gas detection properties. The measurement
technique and sensor response are discussed in detail. The results evince that
gold-coated YBCO films are sensitive to ammonia at room temperature and can be
employed as sensitive layer in integrated silicon-FET sensors for detection of
ammonia.
</span
A material for room temperature FET sensor to detect ammonia and hydrocarbon gases
336-339<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">Cobalt
oxide has been reported as a new material for room temperature FET gas sensor.
Thin films of cobalt oxide have been prepared by DC magnetron sputtering on
oxidized silicon substrates and used as gas sensitive layers in a capacitively controlled
field effect transistor (CCFET) structures. CCFET is a MOSFET with an extended
gate electrode. Gas sensing behaviour of these films has been investigated at
room temperature for different gases of varying concentrations, ranging from 10
ppm
to <span style="font-size:15.5pt;mso-bidi-font-size:8.5pt;font-family:
" times="" new="" roman","serif""="">10,000 <span style="font-size:15.0pt;
mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">ppm. Gases such
as CH<span style="font-size:13.0pt;mso-bidi-font-size:6.0pt;
font-family:" times="" new="" roman","serif""="">4<span style="font-size:
13.0pt;mso-bidi-font-size:6.0pt;font-family:" times="" new="" roman","serif""="">, C3H8,
NH3,
CO, NO and H2 have been used to study the sensor performance. Since
the measured sensor signal is not amplified, it is a direct measure of
sensitivity of the film to a gas to which it is exposed. The CCFET structure,
preparation of sensitive films and measurements are described in this paper.
The results indicate that cobalt oxide is selectively sensitive to ammonia and
hydrocarbon gases only with a little or negligible response to other gases.
Signals of 5 mV and <span style="font-size:15.5pt;mso-bidi-font-size:
8.5pt;font-family:" times="" new="" roman","serif""="">30 <span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">mV for 10
ppm
of the hydrocarbons and ammonia respectively have been observed.
</span
LPCVD and PECVD silicon nitride for microelectronics technology
303-309<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">Silicon
nitride deposition by chemical vapour deposition (CYD) based techniques like
low pressure CYD (LPCYD) and plasma enhanced CYD (PECYD) is described in this
paper. The technological advantages of silicon nitride deposition by these two
techniques, developed at CEERI, are discussed in detail. Applications of LPCYD
nitride films for LOCOS,
<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">composite
gate structures for MNOS and MOS devices are highlighted. The importance of
PECYD nitride films for diffusion masking of compound semiconductors, and for
passivation in Si, GaAs, and InP devices are demonstrated. Process parameters of
LPCYD and PECYD nitride deposition have been optimized for various substrate
conditions depending on the technological requirements. Material properties are
being explored for various micromachining activities, which includes diaphragm
, cantilever, and beam formations.
</span
Engineering a multi epitope vaccine against SARS-CoV-2 by exploiting its non structural and structural proteins
Appraisal of Pancreatic Lipase Inhibitory Potential of <i>Ziziphus oenoplia (L.)Mill.</i> Leaves by <i>In Vitro</i> and <i>In Silico</i> Approaches
Pancreatic lipase is one of the crucial lipolytic enzymes
of the
gut that actively facilitates the digestion and absorption of the
dietary triglycerides and cholesteryl esters. Although it has been
deemed as one of the most reliable targets for the treatment of obesity
and/or dyslipidemia, to date, orlistat is the only known FDA-approved,
effective, oral pancreatic lipase inhibitor available for clinical
use apart from the centrally acting antiobesity agents. However, it
is known to be associated with adverse gastrointestinal and renal
complications. In this study, we attempted to assess the antioxidant
and porcine pancreatic lipase inhibitory potentials of Ziziphus
oenoplia (L.)Mill. leaves through a systematic combination
of in vitro and in silico approaches.
Among the four different extracts including petroleum ether extract,
ethyl acetate extract, ethanolic extract, and aqueous extract obtained
through successive solvent extraction, the ethyl acetate extract has
outperformed the other extracts and orderly displayed competent peroxide
scavenging (IC50 value: 267.30 μg/mL) and porcine
pancreatic lipase inhibitory (IC50 value: 444.44 μg/mL)
potentials compared to the selected reference compounds: ascorbic
acid (IC50 value: 251.50 μg/mL) and orlistat (IC50 value: 502.51 μg/mL) in the selected in vitro assay
models. In addition, based on the molecular docking simulations of
the six essential phytoconstituents of the leaves of Ziziphus
oenoplia (L.)Mill. and their respective chemical analogues
against the crystal structure of pancreatic lipase–colipase
complex (PDB ID: 1LPB), four best-ranked molecules (PubChem CIDs: 15515703, 132582306,
11260294, and 44440845) have been proposed. Further, among these,
the interaction potentials of the two top-ranked molecules (PubChem
CIDs: 132582306 and 15515703) were analyzed through molecular dynamics
(MD) simulations at a trajectory of 100 ns. Finally, absorption, distribution,
metabolism, excretion, and toxicity (ADMET) parameters were theoretically
predicted for all of the molecules using Swiss ADME and ADMET lab2.0.
In conclusion, Ziziphus oenoplia (L.)Mill. leaves
could become a prominent source for various potent bioactive compounds
that may serve as prospective leads for the development of clinically
cognizable pancreatic lipase inhibitors, provided their pharmacokinetic
and in particular toxicity properties are thoroughly optimized
