303-309<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">Silicon
nitride deposition by chemical vapour deposition (CYD) based techniques like
low pressure CYD (LPCYD) and plasma enhanced CYD (PECYD) is described in this
paper. The technological advantages of silicon nitride deposition by these two
techniques, developed at CEERI, are discussed in detail. Applications of LPCYD
nitride films for LOCOS,
<span style="font-size:
15.0pt;mso-bidi-font-size:8.0pt;font-family:" times="" new="" roman","serif""="">composite
gate structures for MNOS and MOS devices are highlighted. The importance of
PECYD nitride films for diffusion masking of compound semiconductors, and for
passivation in Si, GaAs, and InP devices are demonstrated. Process parameters of
LPCYD and PECYD nitride deposition have been optimized for various substrate
conditions depending on the technological requirements. Material properties are
being explored for various micromachining activities, which includes diaphragm
, cantilever, and beam formations.
</span