1,759 research outputs found

    Dielectric function of InGaAs in the visible

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    Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data

    Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

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    Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration

    Calibration of an HPGe detector and self-attenuation correction for Pb-210: Verification by alpha spectrometry of Po-210 in environmental samples

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    In this work the calibration of an HPGe detector for Pb-210 measurement is realised by a liquid standard source and the determination of this radionuclide in solid environmental samples by gamma spectrometry takes into account a correction factor for self-attenuation of its 46.5 keV line. Experimental, theoretical and Monte Carlo investigations are undertaken to evaluate self-attenuation for cylindrical sample geometry. To validate this correction factor (at equilibrium with Po-210 Pb-210) alpha spectrometry procedure using microwave acid digestion under pressure is developed and proposed. The different self-attenuation correction methods are in coherence, and corrected Pb-210 activities are in good agreement with the results of Po-210. Finally, self-attenuation corrections are proposed for environmental solid samples whose density ranges between 0.8 and 1.4 g/cm(3) and whose mass attenuation coefficient is around 0.4 cm(2)/g. (C) 2007 Elsevier B.V. All rights reserved

    Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

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    We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV

    Toward a Structure Determination Method for Biomineral-Associated Protein Using Combined Solid- State NMR and Computational Structure Prediction

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    SummaryProtein-biomineral interactions are paramount to materials production in biology, including the mineral phase of hard tissue. Unfortunately, the structure of biomineral-associated proteins cannot be determined by X-ray crystallography or solution nuclear magnetic resonance (NMR). Here we report a method for determining the structure of biomineral-associated proteins. The method combines solid-state NMR (ssNMR) and ssNMR-biased computational structure prediction. In addition, the algorithm is able to identify lattice geometries most compatible with ssNMR constraints, representing a quantitative, novel method for investigating crystal-face binding specificity. We use this method to determine most of the structure of human salivary statherin interacting with the mineral phase of tooth enamel. Computation and experiment converge on an ensemble of related structures and identify preferential binding at three crystal surfaces. The work represents a significant advance toward determining structure of biomineral-adsorbed protein using experimentally biased structure prediction. This method is generally applicable to proteins that can be chemically synthesized

    Experience with an ultrasound donation program in a low-income country

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    Increasing radiology capacity in low-income countries (LIC) can improve clinicians’ access to diagnostic imaging tools and improve patient care. Ultrasound (US) is important in LIC due to its lower cost compared to that of CT or MRI scans and its excellent diagnostic ability. The relative portability of the equipment makes it ideal for donation by charitable organizations. We describe our experience as a radiology-capacity-focused charity working with the Haitian healthcare system and propose strategies to increase ultrasound capacity in other poor countries

    Exotic Spaces in Quantum Gravity I: Euclidean Quantum Gravity in Seven Dimensions

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    It is well known that in four or more dimensions, there exist exotic manifolds; manifolds that are homeomorphic but not diffeomorphic to each other. More precisely, exotic manifolds are the same topological manifold but have inequivalent differentiable structures. This situation is in contrast to the uniqueness of the differentiable structure on topological manifolds in one, two and three dimensions. As exotic manifolds are not diffeomorphic, one can argue that quantum amplitudes for gravity formulated as functional integrals should include a sum over not only physically distinct geometries and topologies but also inequivalent differentiable structures. But can the inclusion of exotic manifolds in such sums make a significant contribution to these quantum amplitudes? This paper will demonstrate that it will. Simply connected exotic Einstein manifolds with positive curvature exist in seven dimensions. Their metrics are found numerically; they are shown to have volumes of the same order of magnitude. Their contribution to the semiclassical evaluation of the partition function for Euclidean quantum gravity in seven dimensions is evaluated and found to be nontrivial. Consequently, inequivalent differentiable structures should be included in the formulation of sums over histories for quantum gravity.Comment: AmsTex, 23 pages 5 eps figures; replaced figures with ones which are hopefully viewable in pdf forma
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