Automated implementation of rule-based expert systems with neural networks for time-critical applications

In fault diagnosis, control and real-time monitoring, both timing and accuracy are critical for operators or machines to reach proper solutions or appropriate actions. Expert systems are becoming more popular in the manufacturing community for dealing with such problems. In recent years, neural networks have revived and their applications have spread to many areas of science and engineering. A method of using neural networks to implement rule-based expert systems for time-critical applications is discussed here. This method can convert a given rule-based system into a neural network with fixed weights and thresholds. The rules governing the translation are presented along with some examples. We also present the results of automated machine implementation of such networks from the given rule-base. This significantly simplifies the translation process to neural network expert systems from conventional rule-based systems. Results comparing the performance of the proposed approach based on neural networks vs. the classical approach are given. The possibility of very large scale integration (VLSI) realization of such neural network expert systems is also discussed

Fabrication of micro separation column for miniaturized gas chromatography system

The emphasis of this work is on the fabrication of a micro separation column for applicaton in miniaturized gas chromatography system. The micro column was made by microchannels fabricated on the silicon wafer and sealed with a glass lid. The microchannels were fabricated by wet etching process and the channels were of length 2m , width 200 μm and depth 100 μm. The channels were closed by sealing with Pyrex glass. Silicide bonding was done for the bonding of silicon with Pyrex glass. Ti was used as an intermediate layer and bonded at a temperature of 377 ◦C and a force of 1kN. During bonding Ti forms an alloy with silicon and forms Titanium silicide and this helps to bond the glass wafer with silicom wafer with microchannels etched on it

Electrical, Thermal and Spectroscopic Characterization of Bulk Bi2Se3 Topological Insulator

We report electrical (angular magneto-resistance, and Hall), thermal (heat capacity) and spectroscopic (Raman, x-ray photo electron, angle resolved photo electron) characterization of bulk Bi2Se3 topological insulator, which is being is grown by self flux method through solid state reaction from high temperature (950C) melt and slow cooling (2C/hour) of constituent elements. Bi2Se3 exhibited metallic behaviour down to 5K. Magneto transport measurements revealed linear up to 400% and 30% MR at 5K under 14 Tesla field in perpendicular and parallel field direction respectively. We noticed that the magneto-resistance (MR) of Bi2Se3 is very sensitive to the angle of applied field. MR is maximum when the field is normal to the sample surface, while it is minimum when the field is parallel. Hall coefficient (RH) is seen nearly invariant with negative carrier sign down to 5K albeit having near periodic oscillations above 100K. Heat capacity (Cp) versus temperature plot is seen without any phase transitions down to 5K and is well fitted (Cp = gammaT + betaT3) at low temperature with calculated Debye temperature (ThetaD) value of 105.5K. Clear Raman peaks are seen at 72, 131 and 177 cm-1 corresponding to A1g1, Eg2 and A1g2 respectively. Though, two distinct asymmetric characteristic peak shapes are seen for Bi 4f7/2 and Bi 4f5/2, the Se 3d region is found to be broad displaying the overlapping of spin - orbit components of the same. Angle-resolved photoemission spectroscopy (ARPES) data of Bi2Se3 revealed distinctly the bulk conduction bands (BCB), surface state (SS), Dirac point (DP) and bulk valence bands (BVB) and 3D bulk conduction signatures are clearly seen. Summarily, host of physical properties for as grown Bi2Se3 crystal are reported here.Comment: 6 Pages Text + Figs; Comments Suggestions welcom

A KdV-like advection-dispersion equation with some remarkable properties

We discuss a new non-linear PDE, u_t + (2 u_xx/u) u_x = epsilon u_xxx, invariant under scaling of dependent variable and referred to here as SIdV. It is one of the simplest such translation and space-time reflection-symmetric first order advection-dispersion equations. This PDE (with dispersion coefficient unity) was discovered in a genetic programming search for equations sharing the KdV solitary wave solution. It provides a bridge between non-linear advection, diffusion and dispersion. Special cases include the mKdV and linear dispersive equations. We identify two conservation laws, though initial investigations indicate that SIdV does not follow from a polynomial Lagrangian of the KdV sort. Nevertheless, it possesses solitary and periodic travelling waves. Moreover, numerical simulations reveal recurrence properties usually associated with integrable systems. KdV and SIdV are the simplest in an infinite dimensional family of equations sharing the KdV solitary wave. SIdV and its generalizations may serve as a testing ground for numerical and analytical techniques and be a rich source for further explorations.Comment: 15 pages, 4 figures, corrected sign typo in KdV Lagrangian above equation 3

Analysis of Impact of Transformer Coupled Input Matching on Concurrent Dual-Band Low Noise Amplifier

Emerging advancements in telecommunication system need robust radio devices which can capable of working multiple frequency bands seamlessly. In any Radio Frequency (RF) receiver architecture, Low Noise Amplifier (LNA) is the mandatory front-end part in which takes place in between antenna and mixer. To support multiple frequency bands with single hardware, concurrent LNA is the more preferred topologies among others. As LNA is the very front end level of receiver, Input matching, Noise Figure (NF) and gain are the major performance parameters to be concerned. In this work, the impact of transformer coupled input matching on concurrent dual-band LNA is analyzed and verified. A concurrent LNA with concurrent matching without transformer coupling is used for comparison. A transformer coupled input matching is proposed for tunable concurrent dual-band LNA. All the circuits are implemented in UMC 180nm CMOS technology, and simulated using Cadence SpectreRF simulation tool