1,144 research outputs found

    Improved alkaline electrochemical cell

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    Addition of lead ions to electrolyte suppresses zinc dendrite formation during charging cycle. A soluble lead salt can be added directly or metallic lead can be incorporated in the zinc electrode and allowed to dissolve into the electrolyte

    Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

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    The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University of Glasgow for help in fabricating the devices which is reported in this paper. ‘Part of this work was supported by ESPRC through EP/H011862/ 1, and EP/H012966/1.Peer reviewedPublisher PD

    Investigation of contact edge effects in the channel of planar Gunn diodes

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    The effect of the edge of the channel on the operation of Planar Gunn diodes has been examined using Monte Carlo simulations. High fields at the corner of the anode contact are known to cause impact ionization and consequent electroluminescence, but our simulations show that the Gunn domains are attracted to these corners, perturbing the formation of the domains which can lead to chaotic dynamics within the rest of the channel leading to uneven heating and reduced RF output power. We show how novel shaping of the electrical contacts at the ends of the channel reduces the attraction and restores the domain wave-fronts for good device operation

    The Measurement of the Reflection and Transmission Properties of Conducting Fabrics to Milli-Metric Wave Frequencies

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    There is increasing interest in conducting fabrics and their uses at RF and microwave frequencies. This paper for the first time looks at the reflection and transmission measurements of bobbinet and knitted materials from around 8GHz into the milli-metric frequency range 110GHz, where the material geometry is comparable to the wavelength of the wave. Bobbinet materials were found to behave like lossy dielectrics and may be useful in the construction of thin light-weight screening and absorption planes. While the knitted materials, with very small mesh geometry, gave a reflection coefficient which was comparable to a metal foil

    Relations between M\"obius and coboundary polynomial

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    It is known that, in general, the coboundary polynomial and the M\"obius polynomial of a matroid do not determine each other. Less is known about more specific cases. In this paper, we will try to answer if it is possible that the M\"obius polynomial of a matroid, together with the M\"obius polynomial of the dual matroid, define the coboundary polynomial of the matroid. In some cases, the answer is affirmative, and we will give two constructions to determine the coboundary polynomial in these cases.Comment: 12 page

    General duality for abelian-group-valued statistical-mechanics models

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    We introduce a general class of statistical-mechanics models, taking values in an abelian group, which includes examples of both spin and gauge models, both ordered and disordered. The model is described by a set of ``variables'' and a set of ``interactions''. A Gibbs factor is associated to each variable and to each interaction. We introduce a duality transformation for systems in this class. The duality exchanges the abelian group with its dual, the Gibbs factors with their Fourier transforms, and the interactions with the variables. High (low) couplings in the interaction terms are mapped into low (high) couplings in the one-body terms. The idea is that our class of systems extends the one for which the classical procedure 'a la Kramers and Wannier holds, up to include randomness into the pattern of interaction. We introduce and study some physical examples: a random Gaussian Model, a random Potts-like model, and a random variant of discrete scalar QED. We shortly describe the consequence of duality for each example.Comment: 26 pages, 2 Postscript figure

    The EBEX Experiment

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    EBEX is a balloon-borne polarimeter designed to measure the intensity and polarization of the cosmic microwave background radiation. The measurements would probe the inflationary epoch that took place shortly after the big bang and would significantly improve constraints on the values of several cosmological parameters. EBEX is unique in its broad frequency coverage and in its ability to provide critical information about the level of polarized Galactic foregrounds which will be necessary for all future CMB polarization experiments. EBEX consists of a 1.5 m Dragone-type telescope that provides a resolution of less than 8 arcminutes over four focal planes each of 4 degree diffraction limited field of view at frequencies up to 450 GHz. The experiment is designed to accommodate 330 transition edge bolometric detectors per focal plane, for a total of up to 1320 detectors. EBEX will operate with frequency bands centered at 150, 250, 350, and 450 GHz. Polarimetry is achieved with a rotating achromatic half-wave plate. EBEX is currently in the design and construction phase, and first light is scheduled for 2008.Comment: 13 pages, 10 figures. Figure 1 is changed from the one which appeared in the Proceedings of the SPI

    Terahertz oscillations in an In<sub>0.53</sub>Ga<sub>0.47</sub>As submicron planar gunn diode

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    The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode – the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5ÎŒm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5ÎŒm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In&lt;sub&gt;0.53&lt;/sub&gt;Ga&lt;sub&gt;0.47&lt;/sub&gt;A on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 ”W was obtained from a 600 nm long ×120 ”m wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible – the Monte Carlo model used predicts power output at frequencies over 300 GHz
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