Barrier formation at metal/organic interfaces: dipole formation and the Charge Neutrality Level

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.Comment: 7 pages, Proceedings of ICFSI-9, Madrid, Spain (September 2003), special issue of Applied Surface Science (in press

Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level

The formation of a metal/PTCDA (3, 4, 9, 10-perylenetetracarboxylic dianhydride) interface barrier is analyzed using weak-chemisorption theory. The electronic structure of the uncoupled PTCDA molecule and of the metal surface is calculated. Then, the induced density of interface states is obtained as a function of these two electronic structures and the interaction between both systems. This induced density of states is found to be large enough (even if the metal/PTCDA interaction is weak) for the definition of a Charge Neutrality Level for PTCDA, located 2.45 eV above the highest occupied molecular orbital. We conclude that the metal/PTCDA interface molecular level alignment is due to the electrostatic dipole created by the charge transfer between the two solids.Comment: 6 page

Sum-over-states vs quasiparticle pictures of coherent correlation spectroscopy of excitons in semiconductors; femtosecond analogues of multidimensional NMR

Two-dimensional correlation spectroscopy (2DCS) based on the nonlinear optical response of excitons to sequences of ultrafast pulses, has the potential to provide some unique insights into carrier dynamics in semiconductors. The most prominent feature of 2DCS, cross peaks, can best be understood using a sum-over-states picture involving the many-body eigenstates. However, the optical response of semiconductors is usually calculated by solving truncated equations of motion for dynamical variables, which result in a quasiparticle picture. In this work we derive Green's function expressions for the four wave mixing signals generated in various phase-matching directions and use them to establish the connection between the two pictures. The formal connection with Frenkel excitons (hard-core bosons) and vibrational excitons (soft-core bosons) is pointed out.Comment: Accepted to Phys. Rev.

Probing Interband Coulomb Interactions in Semiconductor Nanocrystals with 2D Double-Quantum Coherence Spectroscopy

Using previously developed exciton scattering model accounting for the interband, i.e., exciton-biexciton, Coulomb interactions in semiconductor nanocrystals (NCs), we derive a closed set of equations for 2D double-quantum coherence signal. The signal depends on the Liouville space pathways which include both the interband scattering processes and the inter- and intraband optical transitions. These processes correspond to the formation of different cross-peaks in the 2D spectra. We further report on our numerical calculations of the 2D signal using reduced level scheme parameterized for PbSe NCs. Two different NC excitation regimes considered and unique spectroscopic features associated with the interband Coulomb interactions are identified.Comment: 11 pages, 5 figure

O możliwości zastosowania wysokotemperaturowych czujników Halla opartych o InSb w diagnostyce magnetycznej tokamaka ITER

We report on irradiation experiments of InSb-based Hall samples at two types of neutron spectrums. One with thermal neutrons (natural neutron spectrum of fission reactor) and second with fast neutrons (filtered spectrum). Fluences in both cases reached almost 1018 cm-2 and that led to significant decreasing of electron mobility of samples. In case of thermal neutrons, transmutation process led to increasing of electron concentration of about 2.3×1018 cm-3. For samples irradiated with fast neutrons, twofold effect was observed: increase in electron concentration for samples with low carrier density and decrease in electron concentration for samples with high carrier density. All results raise important issue, that in case of ITER ex-vessel steady state sensors, research at different spectrum of neutrons are necessary.W artykule przedstawione zostały wyniki badań nad napromieniowaniem neutronami struktur halotronowych bazujących na antymonku indu (InSb). Część próbek została napromieniowana w strumieniu neutronów termicznych (widmo naturalne neutronów reaktora MARIA w Świerku), a pozostałe próbki w strumieniu neutronów prędkich (widmo filtrowane neutronów reaktora). W obu przypadkach dozy neutronów były zbliżone do poziomu 1018 cm-2, doprowadzając do znacznego spadku ruchliwości elektronów w cienkich warstwach InSb. W przypadku napromieniowania neutronami termicznymi zaobserwowano wzrost koncentracji elektronów o wartość ok. 2,3×1018 cm-3, głównie za sprawą transmutacji In -> Sn. Dla próbek napromieniowanych neutronami prędkimi wystąpiły dwa przeciwne efekty: wzrost koncentracji elektronów dla próbek o niskiej początkowej koncentracji elektronów, oraz spadek koncentracji dla próbek o wysokiej początkowej koncentracji elektronów. Wyniki badań wskazują, że w przypadku zastosowania czujników Halla w tokamaku ITER niezbędne jest przeprowadzenie badań w strumieniach neutronów o różnym widmie energetycznym

AFM and electron microscopy study of the unusual aggregation behavior of metallosurfactants based on iron(II) complexes with bipyridine ligands

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