Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of \textit{ad-hoc} molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light onto the theoretical and experimental works, we provide a guide for improving the electronic performance of the 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.Comment: 33 pages, 19 figures and 6 table

Doping-related broadening of the density of states governs integer-charge transfer in P3HT

Molecular p-doping allows for an increase in the conductivity of organic semiconductors, which is regularly exploited in thermoelectric devices. Upon doping, integer and fractional charge transfer have been identified as the two competing mechanisms to occur, where the former is desired to promote the generation of mobile holes in the semiconductor host. In general, high dopant electron affinity is expected to promote integer-charge transfer, while strong coupling between the frontier molecular orbitals of dopant and host promotes fractional charge transfer instead. Here, we investigate the role that the width of the density of states (DOS) plays in the doping process by doping the conjugated polymer poly(3-hexylthiophene) (P3HT) with tetracyanoquinodimethane (TCNQ) derivatives of different electron affinities at a 2% dopant ratio. Cyclic voltammetry confirms that only the electron affinity of F4TCNQ (tetrafluorotetracyanoquinodimethane) exceeds the ionization energy of P3HT, while TCNQ and FTCNQ (2-fluoro-7,7,8,8-tetracyanoquinodimethane) turn out to have significantly lower but essentially identical electron affinities. From infrared spectroscopy, we learn, however, that ca. 88% of FTCNQ is ionized while all of TCNQ is not. This translates into P3HT conductivities that are increased for F4TCNQ and FTCNQ doping, but surprisingly even reduced for TCNQ doping. To understand the remarkable discrepancy between TCNQ and FTCNQ, we calculated the percentage of ionized dopants and the hole densities in the P3HT matrix resulting from varied widths of the P3HT highest occupied molecular orbital (HOMO)-DOS via a semi-classical computational approach. We find that broadening of the DOS can yield the expected ionization percentages only if the dopants have significantly different tendencies to cause energetic disorder in the host matrix. In particular, while for TCNQ the doping behavior is well reproduced if the recently reported width of the P3HT HOMO-DOS is used, it must be broadened by almost one order of magnitude to comply with the ionization ratio determined for FTCNQ. Possible reasons for this discrepancy lie in the presence of a permanent dipole in FTCNQ, which highlights that electron affinities alone are not sufficient to define the strength of molecular dopants and their capability to perform integer-charge transfer with organic semiconductors

Nano-Subsidence Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector Arrays

The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely challenging due to their poor adhesion to underlying substrates as ruled by weak van der Waals interactions. Here we report on a novel fabrication method based on nano-subsidence which enables the precise and reliable integration of the micro-patterned 2D materials/silicon photodiode arrays exhibiting high uniformity. Our devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ca. 90%, outperforming most commercial photodiodes. The nano-subsidence technique opens a viable path to on-chip integrate 2D crystals onto silicon for beyond-silicon microelectronics.Comment: 41 pages, 5 figures, with S

Controlling Ambipolar Transport and Voltage Inversion in Solution-Processed Thin-Film Devices through Polymer Blending

Ambipolar semiconductors are attracting a great interest as building blocks for photovoltaics and logic applications. Field-effect transistors built on solution-processable ambipolar materials hold strong promise for the engineering of large-area low-cost logic circuits with a reduced number of devices components. Such devices still suffer from a number of obstacles including the challenging processing, the low Ion/Ioff, the unbalanced mobility, and the low gain in complementary metal–oxide–semiconductor (CMOS)-like circuits. Here, we demonstrate that the simple approach of blending commercially available n- and p-type polymers such as P(NDI2OD-T2), P3HT, PCD-TPT, PDVT-8, and IIDDT-C3 can yield high-performing ambipolar field-effect transistors with balanced mobilities and Ion/Ioff > 10^7. Each single component was studied separately and upon blending by means of electrical characterization, ambient ultraviolet photoelectron spectroscopy, atomic force microscopy, and grazing incidence wide angle X-ray scattering to unravel the correlation between the morphology/structure of the semiconducting films and their functions. Blends of n- and p-type semiconductors were used to fabricate CMOS-like inverter circuits with state-of-the-art gains over 160 in the case of P(NDI2OD-T2) blended with PDVT-8. Significantly, our blending approach was successful in producing semiconducting films with balanced mobilities for each of the four tested semiconductor blends, although the films displayed different structural and morphological features. Our strategy, which relies on establishing a correlation between ambipolar performances, film morphology, molecular structure, and blending ratio, is extremely efficient and versatile; thus it could be applied to a wide range of polymers or solution processable small molecules

Degradation of methylammonium lead iodide perovskite structures through light and electron beam driven ion migration

[Image: see text] Organometal halide perovskites show promising features for cost-effective application in photovoltaics. The material instability remains a major obstacle to broad application because of the poorly understood degradation pathways. Here, we apply simultaneous luminescence and electron microscopy on perovskites for the first time, allowing us to monitor in situ morphology evolution and optical properties upon perovskite degradation. Interestingly, morphology, photoluminescence (PL), and cathodoluminescence of perovskite samples evolve differently upon degradation driven by electron beam (e-beam) or by light. A transversal electric current generated by a scanning electron beam leads to dramatic changes in PL and tunes the energy band gaps continuously alongside film thinning. In contrast, light-induced degradation results in material decomposition to scattered particles and shows little PL spectral shifts. The differences in degradation can be ascribed to different electric currents that drive ion migration. Moreover, solution-processed perovskite cuboids show heterogeneity in stability which is likely related to crystallinity and morphology. Our results reveal the essential role of ion migration in perovskite degradation and provide potential avenues to rationally enhance the stability of perovskite materials by reducing ion migration while improving morphology and crystallinity. It is worth noting that even moderate e-beam currents (86 pA) and acceleration voltages (10 kV) readily induce significant perovskite degradation and alter their optical properties. Therefore, attention has to be paid while characterizing such materials using scanning electron microscopy or transmission electron microscopy techniques

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm2 V–1 s–1. Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 103 AW–1, and 5 × 103, respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material’s properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer

Self-Suspended Nanomesh Scaffold for Ultrafast Flexible Photodetectors Based on Organic Semiconducting Crystals

Self‐standing nanostructures are of fundamental interest in materials science and nanoscience and are widely used in (opto‐)electronic and photonic devices as well as in micro‐electromechanical systems. To date, large‐area and self‐standing nanoelectrode arrays assembled on flexible substrates have not been reported. Here the fabrication of a hollow nanomesh scaffold on glass and plastic substrates with a large surface area over 1 mm2 and ultralow leakage current density (≈1–10 pA mm−2 @ 2 V) across the empty scaffold is demonstrated. Thanks to the continuous sub‐micrometer space formed in between the nanomesh and the bottom electrode, highly crystalline and dendritic domains of 6,13‐bis(triisopropylsilylethinyl)pentacene growing within the hollow cavity can be observed. The high degree of order at the supramolecular level leads to efficient charge and exciton transport; the photovoltaic detector supported on flexible polyethylene terephthalate substrates exhibits an ultrafast photoresponse time as short as 8 ns and a signal‐to‐noise ratio approaching 10^5. Such a hollow scaffold holds great potential as a novel device architecture toward flexible (opto‐)electronic applications based on self‐assembled micro/nanocrystals

Non-invasive digital etching of van der Waals semiconductors

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS$_2$ reaches up to $1200\,$cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.Comment: 46 pages, 4 figures, with S

Optically switchable transistors comprising a hybrid photochromic molecule/n-type organic active layer

Organic semiconductors can be easily combined with other molecular building blocks in order to fabricate multifunctional devices, in which each component conveys a specific (opto)electronic function. We have fabricated photoswitchable hybrid thin-film transistors based on an active bi-component material, consisting of an n-type fullerene derivative and a photochromic diarylethene that possesses light-tunable energy levels. The devices can be gated in two independent ways by either using an electrical stimulus via the application of a voltage to the gate electrode or an optical stimulus causing interconversion of the diarylethene molecules between their two isomers. Fine control over the device output current is achieved by engineering the diarylethenes' LUMO that can act as an intra-gap state controlled by a distinct wavelength in the UV or in the visible range. Importantly, the devices based on a mixed diarylethene/fullerene active layer preserve the high mobility of the pristine semiconductor

Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture

Crystalline dioctyl-3,4,9,10-perylenedicarboximide nanowires and 6,13-bis(triisopropylsilylethynyl) pentacene microplates are integrated into a vertical-yet-open asymmetrical heterojunction for the realization of a high-performance organic photovoltaic detector, which shows fast photoresponse, ultrahigh signal-to-noise ratio, and high sensitivity to weak light