Application of Nd:YAG Laser in Semiconductors’ Nanotechnology

Real time operating system

Effect of Femtosecond Laser-Irradiated Titanium Plates on Enhanced Antibacterial Activity and Preservation of Bacteriophage Stability

Funding Information: This work has been supported by the European Regional Development Fund within the Activity 1.1.1.2 “Post-doctoral Research Aid” of the Specific Aid Objective 1.1.1 “To increase the research and innovative capacity of scientific institutions of Latvia and the ability to attract external financing, investing in human resources and infrastructure” of the Operational Programme “Growth and Employment” (No. 1.1.1.2/VIAA/4/20/638). Publisher Copyright: © 2023 by the authors.Titanium (Ti) is widely recognized for its exceptional properties and compatibility with medical applications. In our study, we successfully formed laser-induced periodic surface structures (LIPSS) on Ti plates with a periodicity of 520–740 nm and a height range of 150–250 nm. To investigate the morphology and chemical composition of these surfaces, we employed various techniques, including field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Additionally, we utilized a drop-shape analyzer to determine the wetting properties of the surfaces. To evaluate the antibacterial activity, we followed the ISO 22196:2011 standard, utilizing reference bacterial cultures of Gram-positive Staphylococcus aureus (ATCC 25923) and Gram-negative Escherichia coli (ATCC 25922). The results revealed enhanced antibacterial properties against Staphylococcus aureus by more than 99% and Escherichia coli by more than 80% in comparison with non-irradiated Ti. Furthermore, we conducted experiments using the Escherichia coli bacteriophage T4 (ATCC 11303-B4) and the bacterial host Escherichia coli (ATCC 11303) to investigate the impact of Ti plates on the stability of the bacteriophage. Overall, our findings highlight the potential of LIPSS on Ti plates for achieving enhanced antibacterial activity against common bacterial strains while maintaining the stability of bacteriophages.Peer reviewe

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity

Chapter Application of Nd:YAG Laser in Semiconductors’ Nanotechnology

Real time operating system

Time-Resolved Photoluminescence in GeSn Film by New Infrared Streak Camera Attachment Based on a Broadband Light Upconversion

GeSn coatings on commercial Si substrates have gained increased interest for application in infrared detectors and lasers. The characterization of these materials is crucial for their quality assessment and in describing device performance for commercialization. The time-resolved photoluminescence is an efficient method for contactless, time-resolved characterization of GeSn optoelectronic properties. For this purpose, in this work, we developed an infrared streak camera attachment based on the broadband upconversion of infrared photoluminescence by using powerful nanosecond 1064 nm pulses. The attachment achieved picosecond time resolution, being limited by the laser pulse duration, jitter, and temporal resolution of the streak camera. The spectral range for time-resolved photoluminescence in the 1100–2400 nm interval was obtained, outperforming the range of commercial infrared InGaAs streak cameras. The developed setup was applied for excitation-dependent time-resolved photoluminescence decay measurements in a GeSn and compared to the conventional upconversion technique with the optically delayed picosecond gate pulses. The new setup provided 2D spectro-temporal images for analysis. The photoluminescence decay times in the 30–80 ps range were obtained in the GeSn layer depending on the excitation pulse energy and spectral emission wavelength. Carrier thermalization was observed as a redshift of the photoluminescence spectra with time

Anatase or rutile TiO2 nanolayer formation on Ti substrates by laser radiation: Mechanical, photocatalytic and antibacterial properties

A laser-induced oxidation method for the formation of a TiO2 layer on a Ti substrate was used. The TiO2 phase can be controlled by an Nd:YAG laser with fundamental frequency at an intensity I = 52.8 MW/cm2 and three different doses. Dose D1 = 3.1x1020 phot/cm2 forms a TiO2 layer in the anatase phase, which possesses the highest photocatalytic, antibacterial and adhesion properties. As the laser dose increases, the TiO2 layer thickness increases from 40 nm to 100 nm, but the photocatalytic decomposition reaction constant decreases. The observed super-linear increase of the TiO2 layer thickness with the laser dose is explained by the presence of positive feedback during the irradiation process. The temperature rises with increasing of the thickness due to the interference-caused decrease of the reflection coefficient. As the thickness increases, TiO2 on Ti structure adhesion decreases from 800 mN to 400 mN due to the formation of a layer with a mixture of phases. The colonization intensities of P. aeruginosa and S. epidermidis bacteria decrease more than tenfold after TiO2 formation. These results are explained by the partial transformation of the TiO2 layer, formed in the anatase phase at dose D1, into the rutile one at doses D2 and D3 due to a deficit of O atoms caused by the low diffusion of O atoms in Ti. According to our experiments and calculations, using the Wagner oxide model, the laser technology can be used to form crystalline structures with a monolayer precisionLietuvos energetikos institutasVytauto Didžiojo universitetasŽemės ūkio akademij

Morphological and optical property study of Li doped ZnO produced by microwave-assisted solvothermal synthesis

ZnO materials have been at the centre of many studies for decades. Doping of ZnO by lithium atoms is a prospective approach for compensation of n-type conductivity in the unintentionally doped ZnO aimed at obtaining p-type semiconductor. In this study, we have synthesized ZnO rod-like powders doped with lithium ions (0–0.65 atom%) by the new microwave-assisted solvothermal method in order to obtain greater photoluminescence intensity of ZnO emissions in the UV region. The obtained powders contain nanoparticles from 20 nm up to 250 nm depending on Li content. X-ray diffractometry and Raman spectroscopy were employed to characterise the structure of ZnO powders, scanning electron microscopy was used to determine the morphology, and most importantly the photoluminescence technique was used to investigate the optical properties of the obtained materials. As a result, the photoluminescence intensity has been increased up to an order of magnitude with the Li content in the ZnO crystals. The increase of the excitation laser power has led to an increased carrier lifetime and photoluminescence response intensity that is observed for all the samples