Comparison of Coupled Radiative Flow Solutions with Project Fire 2 Flight Data

A nonequilibrium, axisymmetric, Navier-Stokes flow solver with coupled radiation has been developed for use in the design or thermal protection systems for vehicles where radiation effects are important. The present method has been compared with an existing now and radiation solver and with the Project Fire 2 experimental data. Good agreement has been obtained over the entire Fire 2 trajectory with the experimentally determined values of the stagnation radiation intensity in the 0.2-6.2 eV range and with the total stagnation heating. The effects of a number of flow models are examined to determine which combination of physical models produces the best agreement with the experimental data. These models include radiation coupling, multitemperature thermal models, and finite rate chemistry. Finally, the computational efficiency of the present model is evaluated. The radiation properties model developed for this study is shown to offer significant computational savings compared to existing codes

Understanding the mechanism of base development of hydrogen silsesquioxane

There have been numerous studies of electron beam exposed hydrogen silsesquioxane (HSQ) development conditions in order to improve the developer contrast. For TMAH based development, improvements were made by going to higher TMAH normalities and heating the developer. Yang and Berggren showed development of electron beam exposed (HSQ) by NaOH with added Na salts (various anions) significantly improves the contrast. Here, we study the contrast and etching rates of 100 keV exposed HSQ in NaOH in the presence of LiCl, NaCl, and KCl salts and use this as a segway to understand the mechanisms governing contrast during development HSQ development. The basic mechanism of development of HSQ can be understood by comparing to etching of quartz in basic solutions. Hydroxide ions act as nucleophiles which attack silicon. When a silicon-oxygen bond of the Si-O-Si matrix is broken, Si-O{sup -} and Si-OH are formed which can reversibly react to form the original structure. When a Si-H bond is broken via reaction with hydroxide, Si-O{sup -} and H{sub 2} gas are formed. Salts can change the etching rates as a function of dose in a non-linear fashion to increase etch contrast. Figs. 1, 2, and 3 show contrast curves for HSQ developed in 0.25 N sodium hydroxide and with the addition of NaCl, LiCl and KCl salts at several concentrations. NaCl addition resulted in the highest contrast. Contrast improves with additional salt concentration while sensitivity decreases. Interestingly enough, addition of salt decreases the removal of material of NaOH alone at higher doses while increasing the rate at lower concentrations. Addition of LiCl salts improves contrast over NaOH alone. Furthermore, the sensitivity at all doses increases as the LiCl concentration increases, a salting out effect. Similar to NaCl salt behavior, the addition of KCl salts, improves contrast at the expense of sensitivity. However, unlike NaCl, even at very high doses, KCl addition increases removal rate of HSQ. We propose explanations for these results by considering the change of nucleophilic strength of the OH{sup -} as a function of cation size and concentration, the ability for salts to block the surface etching, competition between bond breakage and recombination, and the density of the HSQ as a function of dose. Furthermore, we will discuss evolution of contrast as a function of development time in the context of our models

The link between a negative high resolution resist contrast/developer performance and the Flory-Huggins parameter estimated from the Hansen solubility sphere

We have implemented a technique to identify candidate polymer solvents for spinning, developing, and rinsing for a high resolution, negative electron beam resist hexa-methyl acetoxy calix(6)arene to elicit the optimum pattern development performance. Using the three dimensional Hansen solubility parameters for over 40 solvents, we have constructed a Hansen solubility sphere. From this sphere, we have estimated the Flory Huggins interaction parameter for solvents with hexa-methyl acetoxy calix(6)arene and found a correlation between resist development contrast and the Flory-Huggins parameter. This provides new insights into the development behavior of resist materials which are necessary for obtaining the ultimate lithographic resolution

Fabrication and performance of nanoscale ultra-smooth programmed defects for EUV Lithography

We have developed processes for producing ultra-smooth nanoscale programmed substrate defects that have applications in areas such as thin film growth, EUV lithography, and defect inspection. Particle, line, pit, and scratch defects on the substrates between 40 and 140 nm wide 50 to 90 nm high have been successfully produced using e-beam lithograpy and plasma etching in both Silicon and Hydrosilsequioxane films. These programmed defect substrates have several advantages over those produced previously using gold nanoparticles or polystyrene latex spheres--most notably, the ability to precisely locate features and produce recessed as well as bump type features in ultra-smooth films. These programmed defects were used to develop techniques for film defect mitigation and results are discussed

Mapping of ion beam induced current changes in FinFETs

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.Comment: IBMM 2008 conference proceedin

A Silicon-Based, Sequential Coat-and-Etch Process to Fabricate Nearly Perfect Substrate Surfaces

For many thin-film applications substrate imperfections such as particles, pits, scratches, and general roughness, can nucleate film defects which can severely detract from the coating's performance. Previously we developed a coat-and-etch process, termed the ion beam thin film planarization process, to planarize substrate particles up to {approx} 70 nm in diameter. The process relied on normal incidence etching; however, such a process induces defects nucleated by substrate pits to grow much larger. We have since developed a coat-and-etch process to planarize {approx}70 nm deep by 70 nm wide substrate pits; it relies on etching at an off-normal incidence angle, i.e., an angle of {approx} 70{sup o} from the substrate normal. However, a disadvantage of this pit smoothing process is that it induces defects nucleated by substrate particles to grow larger. Combining elements from both processes we have been able to develop a silicon-based, coat-and-etch process to successfully planarize {approx}70 nm substrate particles and pits simultaneously to at or below 1 nm in height; this value is important for applications such as extreme ultraviolet lithography (EUVL) masks. The coat-and-etch process has an added ability to significantly reduce high-spatial frequency roughness, rendering a nearly perfect substrate surface