Ferroelectric domain triggers the charge modulation in semiconductors (invited)

We consider a typical heterostructure "domain patterned ferroelectric film - ultra-thin dielectric layer - semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. © 2014 AIP Publishing LLC

Symmetry Breaking and Electrical Frustration during Tip-Induced Polarization Switching in the Nonpolar Cut of Lithium Niobate Single Crystals

Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching at nonpolar cuts of uniaxial ferroelectrics. In this case, the in-plane component of the polarization vector switches, allowing for detailed observations of the resultant domain morphologies. We observe a surprising variability of resultant domain morphologies stemming from a fundamental instability of the formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling the vertical tip position allows the polarity of the switching to be controlled. This represents a very unusual form of symmetry breaking where mechanical motion in the vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed

Symmetry Breaking and Electrical Frustration during Tip-Induced Polarization Switching in the Nonpolar Cut of Lithium Niobate Single Crystals

Polarization switching in ferroelectric materials is governed by a delicate interplay between bulk polarization dynamics and screening processes at surfaces and domain walls. Here we explore the mechanism of tip-induced polarization switching at nonpolar cuts of uniaxial ferroelectrics. In this case, the in-plane component of the polarization vector switches, allowing for detailed observations of the resultant domain morphologies. We observe a surprising variability of resultant domain morphologies stemming from a fundamental instability of the formed charged domain wall and associated electric frustration. In particular, we demonstrate that controlling the vertical tip position allows the polarity of the switching to be controlled. This represents a very unusual form of symmetry breaking where mechanical motion in the vertical direction controls the lateral domain growth. The implication of these studies for ferroelectric devices and domain wall electronics are discussed