Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes

The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier lifetimes and contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of surface and volume Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that, in most cases for HR GaAs:Cr and SI GaAs:EL2, Auger recombination mechanisms make the largest contribution to the recombination rate of nonequilibrium charge carriers at injection levels above ~(0.5–3)·1018 cm−3, typical of pump–probe experiments. At a lower photogenerated charge carrier concentration, the SRH recombination prevails. The derived charge carrier lifetimes, due to the SRH recombination, are approximately 1.5 and 25 ns in HR GaAs:Cr and SI GaAs:EL2, respectively. These values are closer to but still lower than the values determined by photoluminescence decay or charge collection efficiency measurements at low injection levels. The obtained results indicate the importance of a proper experimental data analysis when applying terahertz time-resolved spectroscopy to the determination of charge carrier lifetimes in semiconductor crystals intended for the fabrication of devices working at lower injection levels than those at measurements by the optical pump–terahertz probe technique. It was found that the charge carrier lifetime in HR GaAs:Cr is lower than that in SI GaAs:EL2 at injection levels > 1016 cm−3.В ст. ошибочно: Irina A. Kolesnikov

Femtosecond primary charge separation in Synechocystis sp. PCC 6803 photosystem I

AbstractThe ultrafast (<100fs) conversion of delocalized exciton into charge-separated state between the primary donor P700 (bleaching at 705nm) and the primary acceptor A0 (bleaching at 690nm) in photosystem I (PS I) complexes from Synechocystis sp. PCC 6803 was observed. The data were obtained by application of pump–probe technique with 20-fs low-energy pump pulses centered at 720nm. The earliest absorbance changes (close to zero delay) with a bleaching at 690nm are similar to the product of the absorption spectrum of PS I complex and the laser pulse spectrum, which represents the efficiency spectrum of the light absorption by PS I upon femtosecond excitation centered at 720nm. During the first ∼60fs the energy transfer from the chlorophyll (Chl) species bleaching at 690nm to the Chl bleaching at 705nm occurs, resulting in almost equal bleaching of the two forms with the formation of delocalized exciton between 690-nm and 705-nm Chls. Within the next ∼40fs the formation of a new broad band centered at ∼660nm (attributed to the appearance of Chl anion radical) is observed. This band decays with time constant simultaneously with an electron transfer to A1 (phylloquinone). The subtraction of kinetic difference absorption spectra of the closed (state P700+A0A1) PS I reaction center (RC) from that of the open (state P700A0A1) RC reveals the pure spectrum of the P700+A0− ion–radical pair. The experimental data were analyzed using a simple kinetic scheme: An* →k1 [(PA0)*A1→<100fs P+A0−A1] →k2P+A0A1−, and a global fitting procedure based on the singular value decomposition analysis. The calculated kinetics of transitions between intermediate states and their spectra were similar to the kinetics recorded at 694 and 705nm and the experimental spectra obtained by subtraction of the spectra of closed RCs from the spectra of open RCs. As a result, we found that the main events in RCs of PS I under our experimental conditions include very fast (<100fs) charge separation with the formation of the P700+A0−A1 state in approximately one half of the RCs, the ∼5-ps energy transfer from antenna Chl* to P700A0A1 in the remaining RCs, and ∼25-ps formation of the secondary radical pair P700+A0A1−

THE PHYSIOLOGO-BIOTECHNOLOGICAL ASPECTS OF THE VIRUS-FREE POTATO FARMING

For the first time, on the base of the offered theory of the directed organogenesis in the culture in vitro, the optimum conditions, inducing the tuber-formation of the potato regenerants, have been developed. On the base of results of the investigations, the industrial technology of receiving the minitubers for the primary seed farming of the potato on the base of the virus-free technology, having no world analogs, has been developed. The technology of production of the virus-free potato material on the base of the biotechnological methods has been recommended for a wide introduction in production. The multi-year production tests have shown the high efficiency of the developed technology of growing the planting material of the potato.Available from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio

Generation of terahertz radiation in LED heterostructures with multiple InGaN/GaN quantum wells at two-photon excitation by femtosecond

The results of experiments on the generation of terahertz radiation in the nitride LED structures at optical excitation by ultrashort laser pulses are presented. The dependences of the emission spectra on the structural parameters of samples and intensity of laser pulses are studied. An increase in the amplitude and the shift of the frequency spectra of terahertz pulses to higher frequencies with increasing number of quantum wells in the heterostructure is found