Radiation hard 3D silicon pixel sensors for use in the ATLAS detector at the HL-LHC

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation fluences above 1 × 1016 neqcm-2. Novel 3D silicon pixel sensors offer a superior radiation tolerance compared to conventional planar pixel sensors, and are thus excellent candidates for the innermost parts of the ITk. This paper presents studies of 3D pixel sensors with pixel size 50 × 50 μm2 mounted on the RD53A prototype readout chip. Following a description of the design and fabrication steps, Test Beam results are presented for unirradiated as well as heavily irradiated sensors. For particles passing at perpendicular incidence, it is shown that average efficiencies above 96% are reached for sensors exposed to fluences of 1 × 1016 neqcm-2 when biased to 80 V.publishedVersio

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

Presented at: 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors - RD09. Florence, Italy, 30 September - 2 October 20093D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200μm, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110μm to 150μm. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 γ-ray sources, charge collection tests with Sr90 β-source and an overview of preliminary results from the CERN beam test.publishedVersio

Measuring the free fall of antihydrogen

After the first production of cold antihydrogen by the ATHENA and ATRAP experiments ten years ago, new second-generation experiments are aimed at measuring the fundamental properties of this anti-atom. The goal of AEGIS (Antimatter Experiment: Gravity, Interferometry, Spectroscopy) is to test the weak equivalence principle by studying the gravitational interaction between matter and antimatter with a pulsed, cold antihydrogen beam. The experiment is currently being assembled at CERN's Antiproton Decelerator. In AEGIS, antihydrogen will be produced by charge exchange of cold antiprotons with positronium excited to a high Rydberg state (n > 20). An antihydrogen beam will be produced by controlled acceleration in an electric-field gradient (Stark acceleration). The deflection of the horizontal beam due to its free fall in the gravitational field of the earth will be measured with a moire deflectometer. Initially, the gravitational acceleration will be determined to a precision of 1%, requiring the detection of about 105 antihydrogen atoms. In this paper, after a general description, the present status of the experiment will be reviewed

Exploring the WEP with a pulsed cold beam of antihydrogen

The AEGIS experiment, currently being set up at the Antiproton Decelerator at CERN, has the objective of studying the free fall of antimatter in the Earth's gravitational field by means of a pulsed cold atomic beam of antihydrogen atoms. Both duration of free fall and vertical displacement of the horizontally emitted atoms will be measured, allowing a first test of the WEP with antimatter