Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide

Nanoantenna couplers for metal-insulator-metal waveguide interconnects

State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times

Plasmonic materials based on ZnO films and their potential for developing broadband middle-infrared absorbers

Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are desired for a new generation of efficient and agile devices. In this paper, atomic layer deposition (ALD) grown ZnO is investigated as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. We show that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, we simulate a grating structure and computationally demonstrate an ultra-wide-band (4–15 μm) infrared absorber

Broadband One Way Propagation via Dielectric Waveguides with Unequal Effective Index

We present an efficient approach for broad band one way propagation of light by parallel and unequal dielectric waveguides leading different effective phase shifts. Three dimensional numerical simulations show that 30% operating bandwidth is achieved

Catalytic Properties of Vanadium Diselenide: A Comprehensive Study on Its Electrocatalytic Performance in Alkaline, Neutral, and Acidic Media

Here, we report the synthesis of vanadium diselenide (VSe2) three-dimensional nanoparticles (NPs) and two-dimensional (2D) nanosheets (NSs) utilizing nanosecond pulsed laser ablation technique followed by liquid-phase exfoliation. Furthermore, a systematic study has been conducted on the effect of NP and NS morphologies of VSe2 in their catalytic activities toward oxygen reduction reaction (ORR), oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) under alkaline, neutral, and acidic conditions. Research on VSe2 clearly demonstrates that these morphologies do not have a significant difference for ORR and OER; however, a drastic effect of morphology was observed for HER. The ORR activity of both NSs and NPs involves ∼2.85 numbers of electrons with the Tafel slope of 120 mV/dec in alkaline and neutral pH. In alkaline solution, NPs are proved to be an efficient catalyst for OER with an onset potential 1.5 V; however, for HER, NSs have a better onset potential of −0.25 V. Moreover, the obtained NPs have also better catalytic activity with a 400 mV anodic shift in the onset potential compared to NSs. These results provide a reference point for the future application of VSe2 in energy storage and conversion devices and mass production of other 2D materials