5,592 research outputs found
Integral Transforms for Conformal Field Theories with a Boundary
A new method is developed for solving the conformally invariant integrals
that arise in conformal field theories with a boundary. The presence of a
boundary makes previous techniques for theories without a boundary less
suitable. The method makes essential use of an invertible integral transform,
related to the radon transform, involving integration over planes parallel to
the boundary. For successful application of this method several nontrivial
hypergeometric function relations are also derived.Comment: 20 pagess, LateX fil
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Spin depolarization in the transport of holes across GaMnAs/GaAlAs/p-GaAs
We study the spin polarization of tunneling holes injected from ferromagnetic
GaMnAs into a p-doped semiconductor through a tunneling barrier. We obtain an
upper limit to the spin injection rate. We find that spin-orbit interaction
interaction in the barrier and in the drain limits severely spin injection.
Spin depolarization is stronger when the magnetization is parallel to the
current than when is perpendicular to it.Comment: Accepted in Phys. Rev. B. 4 pages, 4 figure
Polaron percolation in diluted magnetic semiconductors
We theoretically study the development of spontaneous magnetization in
diluted magnetic semiconductors as arising from a percolation of bound magnetic
polarons. Within the framework of a generalized percolation theory we derive
analytic expressions for the Curie temperature and the magnetization, obtaining
excellent quantitative agreement with Monte Carlo simulation results and good
qualitative agreement with experimental results.Comment: 5 page
Free energy density for mean field perturbation of states of a one-dimensional spin chain
Motivated by recent developments on large deviations in states of the spin
chain, we reconsider the work of Petz, Raggio and Verbeure in 1989 on the
variational expression of free energy density in the presence of a mean field
type perturbation. We extend their results from the product state case to the
Gibbs state case in the setting of translation-invariant interactions of finite
range. In the special case of a locally faithful quantum Markov state, we
clarify the relation between two different kinds of free energy densities (or
pressure functions).Comment: 29 pages, Section 5 added, to appear in Rev. Math. Phy
Spin Coulomb drag in the two-dimensional electron liquid
We calculate the spin-drag transresistivity
in a two-dimensional electron gas at temperature in the random phase
approximation. In the low-temperature regime we show that, at variance with the
three-dimensional low-temperature result [], the spin transresistivity of a two-dimensional {\it spin unpolarized}
electron gas has the form . In the
spin-polarized case the familiar form is
recovered, but the constant of proportionality diverges logarithmically as
the spin-polarization tends to zero. In the high-temperature regime we obtain
(where
is the effective Rydberg energy) {\it independent} of the density.
Again, this differs from the three-dimensional result, which has a logarithmic
dependence on the density. Two important differences between the spin-drag
transresistivity and the ordinary Coulomb drag transresistivity are pointed
out: (i) The singularity at low temperature is smaller, in the Coulomb
drag case, by a factor where is the Fermi wave vector and
is the separation between the layers. (ii) The collective mode contribution
to the spin-drag transresistivity is negligible at all temperatures. Moreover
the spin drag effect is, for comparable parameters, larger than the ordinary
Coulomb drag effect.Comment: 6 figures; various changes; version accepted for publicatio
Spin-polarized current amplification and spin injection in magnetic bipolar transistors
The magnetic bipolar transistor (MBT) is a bipolar junction transistor with
an equilibrium and nonequilibrium spin (magnetization) in the emitter, base, or
collector. The low-injection theory of spin-polarized transport through MBTs
and of a more general case of an array of magnetic {\it p-n} junctions is
developed and illustrated on several important cases. Two main physical
phenomena are discussed: electrical spin injection and spin control of current
amplification (magnetoamplification). It is shown that a source spin can be
injected from the emitter to the collector. If the base of an MBT has an
equilibrium magnetization, the spin can be injected from the base to the
collector by intrinsic spin injection. The resulting spin accumulation in the
collector is proportional to , where is the proton
charge, is the bias in the emitter-base junction, and is the
thermal energy. To control the electrical current through MBTs both the
equilibrium and the nonequilibrium spin can be employed. The equilibrium spin
controls the magnitude of the equilibrium electron and hole densities, thereby
controlling the currents. Increasing the equilibrium spin polarization of the
base (emitter) increases (decreases) the current amplification. If there is a
nonequilibrium spin in the emitter, and the base or the emitter has an
equilibrium spin, a spin-valve effect can lead to a giant magnetoamplification
effect, where the current amplifications for the parallel and antiparallel
orientations of the the equilibrium and nonequilibrium spins differ
significantly. The theory is elucidated using qualitative analyses and is
illustrated on an MBT example with generic materials parameters.Comment: 14 PRB-style pages, 10 figure
Magnetic properties of the Ag-In-rare-earth 1/1 approximants
We have performed magnetic susceptibility and neutron scattering measurements
on polycrystalline Ag-In-RE (RE: rare-earth) 1/1 approximants. In the magnetic
susceptibility measurements, for most of the RE elements, inverse
susceptibility shows linear behaviour in a wide temperature range, confirming
well localized isotropic moments for the RE ions. Exceptionally for the
light RE elements, such as Ce and Pr, non-linear behaviour was observed,
possibly due to significant crystalline field splitting or valence fluctuation.
For RE = Tb, the susceptibility measurement clearly shows a bifurcation of the
field-cooled and zero-field-cooled susceptibility at ~K,
suggesting a spin-glass-like freezing. On the other hand, neutron scattering
measurements detect significant development of short-range antiferromagnetic
spin correlations in elastic channel, which accompanied by a broad peak at
~meV in inelastic scattering spectrum. These features have
striking similarity to those in the Zn-Mg-Tb quasicrystals, suggesting that the
short-range spin freezing behaviour is due to local high symmetry clusters
commonly seen in both the systems.Comment: 14 pages, 12 figure
Origins of ferromagnetism in transition-metal doped Si
We present results of the magnetic, structural and chemical characterizations of Mn<sup>+</sup>-implanted Si displaying <i>n</i>-type semiconducting behavior and ferromagnetic ordering with Curie temperature,T<sub>C</sub> well above room temperature. The temperature-dependent magnetization measured by superconducting quantum device interference (SQUID) from 5 K to 800 K was characterized by three different critical temperatures (T*<sub>C</sub>~45 K, T<sub>C1</sub>~630-650 K and T<sub>C2</sub>~805-825 K). Their origins were investigated using dynamic secondary mass ion spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques, including electron energy loss spectroscopy (EELS), Z-contrast STEM (scanning TEM) imaging and electron diffraction. We provided direct evidences of the presence of a small amount of Fe and Cr impurities which were unintentionally doped into the samples together with the Mn<sup>+</sup> ions, as well as the formation of Mn-rich precipitates embedded in a Mn-poor matrix. The observed T*<sub>C</sub> is attributed to the Mn<sub>4</sub>Si<sub>7</sub> precipitates identified by electron diffraction. Possible origins of and are also discussed. Our findings raise questions regarding the origin of the high ferromagnetism reported in many material systems without a careful chemical analysis
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