7,557 research outputs found
Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction
We investigated the influence of n+-GaAs thickness and doping density of
GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical
electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel
junctions with different n+-GaAs thickness and doping density grown on
identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures.
Electroluminescence (EL) polarization of the surface emission was measured
under the Faraday configuration with external magnetic field. All samples have
the bias dependence of the EL polarization, and higher EL polarization is
obtained in samples in which n+-GaAs is completely depleted at zero bias. The
EL polarization is found to be sensitive to the bias condition for both the
(Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.Comment: 4pages, 4figures, 1table, To appear in Physica
Eigenvalue distribution of the Dirac operator at finite temperature with (2+1)-flavor dynamical quarks using the HISQ action
We report on the behavior of the eigenvalue distribution of the Dirac
operator in (2+1)-flavor QCD at finite temperature, using the HISQ action. We
calculate the eigenvalue density at several values of the temperature close to
the pseudocritical temperature. For this study we use gauge field
configurations generated on lattices of size with two light
quark masses corresponding to pion masses of about 160 and 115 MeV. We find
that the eigenvalue density below receives large contributions from
near-zero modes which become smaller as the temperature increases or the light
quark mass decreases. Moreover we find no clear evidence for a gap in the
eigenvalue density up to 1.1. We also analyze the eigenvalue density near
where it appears to show a power-law behavior consistent with what is
expected in the critical region near the second order chiral symmetry restoring
phase transition in the massless limit.Comment: 7 pages, 7 figures, talk presented at the XXIX International
Symposium on Lattice Field Theory, July 10-16 2011, Squaw Valley, Lake Tahoe,
California, US
Transition temperature of ferromagnetic semiconductors: a dynamical mean field study
We formulate a theory of doped magnetic semiconductors such as
GaMnAs which have attracted recent attention for their possible use
in spintronic applications. We solve the theory in the dynamical mean field
approximation to find the magnetic transition temperature as a function
of magnetic coupling strength and carrier density . We find that
is determined by a subtle interplay between carrier density and magnetic
coupling.Comment: 4 pages, 4 figure
Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
Current-induced domain-wall motion with velocity spanning over five orders of
magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in
(Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to
verify theories of spin-transfer by the Slonczewski-like mechanism as well as
by the torque resulting from spin-flip transitions in the domain-wall region.
Evidence for domain-wall creep at low currents is found.Comment: 5 pages, 3 figure
Influence of disorder on the ferromagnetism in diluted magnetic semiconductors
Influence of disorder on the ferromagnetic phase transition in diluted
(III,Mn)V semiconductors is investigated analytically. The regime of small
disorder is addressed, and the enhancement of the critical temperature by
disorder is found both in the mean field approximation and from the analysis of
the zero temperature spin stiffness. Due to disorder, the spin wave
fluctuations around the ferromagnetically ordered state acquire a finite mass.
At large charge carrier band width, the spin wave mass squared becomes
negative, signaling the breakdown of the ferromagnetic ground state and the
onset of a noncollinear magnetic order.Comment: Replaced with revised version. 10 pages, 3 figure
Global versus Local Ferromagnetism in a Model for Diluted Magnetic Semiconductors Studied with Monte Carlo Techniques
A model recently introduced for diluted magnetic semiconductors by Berciu and
Bhatt (PRL 87, 107203 (2001)) is studied with a Monte Carlo technique, and the
results are compared to Hartree-Fock calculations. For doping rates close to
the experimentally observed metal-insulator transition, a picture dominated by
ferromagnetic droplets formed below a T* scale emerges. The moments of these
droplets align as the temperature is lowered below a critical value Tc<T*. Our
Monte Carlo investigations provide critical temperatures considerably smaller
than Hartree-Fock predictions. Disorder does not seem to enhance ferromagnetism
substantially. The inhomogeneous droplet state should be strongly susceptible
to changes in doping and external fields.Comment: 4 pages, 4 figure
Domain wall dynamics in a single CrO grain
Recently we have reported on the magnetization dynamics of a single CrO
grain studied by micro Hall magnetometry (P. Das \textit{et al.}, Appl. Phys.
Lett. \textbf{97} 042507, 2010). For the external magnetic field applied along
the grain's easy magnetization direction, the magnetization reversal takes
place through a series of Barkhausen jumps. Supported by micromagnetic
simulations, the ground state of the grain was found to correspond to a flux
closure configuration with a single cross-tie domain wall. Here, we report an
analysis of the Barkhausen jumps, which were observed in the hysteresis loops
for the external field applied along both the easy and hard magnetization
directions. We find that the magnetization reversal takes place through only a
few configuration paths in the free-energy landscape, pointing to a high purity
of the sample. The distinctly different statistics of the Barkhausen jumps for
the two field directions is discussed.Comment: JEMS Conference, to appear in J. Phys. Conf. Se
Domain-wall resistance in ferromagnetic (Ga,Mn)As
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As
with perpendicular magnetic anisotropy has been employed to determine extrinsic
and intrinsic contributions to DW resistance. The former is explained
quantitatively as resulting from a polarity change in the Hall electric field
at DW. The latter is one order of magnitude greater than a term brought about
by anisotropic magnetoresistance and is shown to be consistent with
disorder-induced misstracing of the carrier spins subject to spatially varying
magnetization
Mott Relation for Anomalous Hall and Nernst effects in Ga1-xMnxAs Ferromagnetic Semiconductors
The Mott relation between the electrical and thermoelectric transport
coefficients normally holds for phenomena involving scattering. However, the
anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit
interaction. In this work, we have simultaneously measured AHE and the
anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films,
and observed an exceptionally large ANE at zero magnetic field. We further show
that AHE and ANE share a common origin and demonstrate the validity of the Mott
relation for the anomalous transport phenomena
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