De Rham Cohomology of SO(n) by Supersymmetric Quantum Mechanics

We give an elementary derivation of the de Rham cohomology of SO(n) in terms of supersymmetric quantum mechanics. Our analysis is based on Witten's Morse theory. We show reflection symmetries of the theory are useful to select true vacuums. The number of the selected vacuums will agree with the de Rham cohomology of SO(n).Comment: 7pages, latex, no figure

de Rham cohomology of SO(n) and some related manifolds by supersymmetric quantum mechanics

We study supersymmetric quantum mechanics on RP_{n},SO(n),G_{2} and U(2) to examine Witten's Morse theory concretely. We confirm the simple instanton picture of the de Rham cohomology that has been given in a previous paper. We use a reflection symmetry of each theory to select the true vacuums. The number of selected vacuums agrees with the de Rham cohomology for each of the above manifolds.Comment: 18pages,Late

Quantum integrability of the deformed elliptic Calogero-Moser problem

The integrability of the deformed quantum elliptic Calogero-Moser problem introduced by Chalykh, Feigin and Veselov is proven. Explicit recursive formulae for the integrals are found. For integer values of the parameter this implies the algebraic integrability of the systems.Comment: 23 page

Selective d-state Conduction Blocking in Nickel Nanocontacts

The lowest conductance step for a Ni nanocontact is anomalously small in comparison with the large expected number of conducting channels. We present electronic structure calculations for an extremely idealized Ni nanobridge consisting of just a monatomic nanowire. Our calculations show that no less than eight single spin bands cross the Fermi level in a nonmagnetic Ni monatomic wire, dropping marginally to seven in the more stable, fully ferromagnetic state. However, when we build in the wire a magnetization reversal, or domain wall, by forcing the net magnetization to be zero, we suddenly find that d electrons selectively cease to propagate across the wall. s electron propagation remains, and can account for the small observed conductance steps.Comment: 9 pages, 4 figures, Surface Science, to appea

Electronic Structures of N-doped Graphene with Native Point Defects

Nitrogen doping in graphene has important implications in graphene-based devices and catalysts. We have performed the density functional theory calculations to study the electronic structures of N-doped graphene with vacancies and Stone-Wales defect. Our results show that monovacancies in graphene act as hole dopants and that two substitutional N dopants are needed to compensate for the hole introduced by a monovacancy. On the other hand, divacancy does not produce any free carriers. Interestingly, a single N dopant at divacancy acts as an acceptor rather than a donor. The interference between native point defect and N dopant strongly modifies the role of N doping regarding the free carrier production in the bulk pi bands. For some of the defects and N dopant-defect complexes, localized defect pi states are partially occupied. Discussion on the possibility of spin polarization in such cases is given. We also present qualitative arguments on the electronic structures based on the local bond picture. We have analyzed the 1s-related x-ray photoemission and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales defect in connection with the experimental ones. We also discuss characteristic scanning tunneling microscope (STM) images originating from the electronic and structural modifications by the N dopant-defect complexes. STM imaging for small negative bias voltage will provide important information about possible active sites for oxygen reduction reaction.Comment: 40 pages, 2 tables, 16 figures. The analysis of Clar sextets is added. This version is published on PHYSICAL REVIEW B 87, 165401(2013

Spin-filter tunnel junction with matched Fermi surfaces

Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of spin-filter-type spin injectors is limited by spin scattering of the tunneling electrons. By matching the Fermi-surface shapes of the current injection source and target electrode material, spin injection efficiency can be significantly increased in epitaxial ferromagnetic insulator tunnel junctions. Our results demonstrate that not only structural but also Fermi-surface matching is important to suppress scattering processes in spintronic devices.Comment: 5 pages, 4 figure

Simulations of slow positron production using a low energy electron accelerator

Monte Carlo simulations of slow positron production via energetic electron interaction with a solid target have been performed. The aim of the simulations was to determine the expected slow positron beam intensity from a low energy, high current electron accelerator. By simulating (a) the fast positron production from a tantalum electron-positron converter and (b) the positron depth deposition profile in a tungsten moderator, the slow positron production probability per incident electron was estimated. Normalizing the calculated result to the measured slow positron yield at the present AIST LINAC the expected slow positron yield as a function of energy was determined. For an electron beam energy of 5 MeV (10 MeV) and current 240 $\mu$A (30 $\mu$A) production of a slow positron beam of intensity 5 $\times$ 10$^{6}$ s$^{-1}$ is predicted. The simulation also calculates the average energy deposited in the converter per electron, allowing an estimate of the beam heating at a given electron energy and current. For low energy, high-current operation the maximum obtainable positron beam intensity will be limited by this beam heating.Comment: 11 pages, 15 figures, submitted to Review of Scientific Instrument

Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells

The intermediatebandsolarcell (IBSC) is a photovoltaic device with a theoretical conversion efficiency limit of 63.2%. In recent years many attempts have been made to fabricate an intermediateband material which behaves as the theory states. One characteristic feature of an IBSC is its luminescence spectrum. In this work the temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra of InAs/GaAs QD-IBSCs together with their reference cell have been studied. It is shown that EL measurements provide more reliable information about the behaviour of the IB material inside the IBSC structure than PL measurements. At low temperatures, the EL spectra are consistent with the quasi-Fermi level splits described by the IBSC model, whereas at room temperature they are not. This result is in agreement with previously reported analysis of the quantum efficiency of the solarcell