Nitrogen doping in graphene has important implications in graphene-based
devices and catalysts. We have performed the density functional theory
calculations to study the electronic structures of N-doped graphene with
vacancies and Stone-Wales defect. Our results show that monovacancies in
graphene act as hole dopants and that two substitutional N dopants are needed
to compensate for the hole introduced by a monovacancy. On the other hand,
divacancy does not produce any free carriers. Interestingly, a single N dopant
at divacancy acts as an acceptor rather than a donor. The interference between
native point defect and N dopant strongly modifies the role of N doping
regarding the free carrier production in the bulk pi bands. For some of the
defects and N dopant-defect complexes, localized defect pi states are partially
occupied. Discussion on the possibility of spin polarization in such cases is
given. We also present qualitative arguments on the electronic structures based
on the local bond picture. We have analyzed the 1s-related x-ray photoemission
and adsorption spectroscopy spectra of N dopants at vacancies and Stone-Wales
defect in connection with the experimental ones. We also discuss characteristic
scanning tunneling microscope (STM) images originating from the electronic and
structural modifications by the N dopant-defect complexes. STM imaging for
small negative bias voltage will provide important information about possible
active sites for oxygen reduction reaction.Comment: 40 pages, 2 tables, 16 figures. The analysis of Clar sextets is
added. This version is published on PHYSICAL REVIEW B 87, 165401(2013