New precise determination of the \tau lepton mass at KEDR detector

The status of the experiment on the precise $\tau$ lepton mass measurement running at the VEPP-4M collider with the KEDR detector is reported. The mass value is evaluated from the $\tau^+\tau^-$ cross section behaviour around the production threshold. The preliminary result based on 6.7 pb$^{-1}$ of data is $m_{\tau}=1776.80^{+0.25}_{-0.23} \pm 0.15$ MeV. Using 0.8 pb$^{-1}$ of data collected at the $\psi'$ peak the preliminary result is also obtained: $\Gamma_{ee}B_{\tau\tau}(\psi') = 7.2 \pm 2.1$ eV.Comment: 6 pages, 8 figures; The 9th International Workshop on Tau-Lepton Physics, Tau0

Search for narrow resonances in e+ e- annihilation between 1.85 and 3.1 GeV with the KEDR Detector

We report results of a search for narrow resonances in e+ e- annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e+ e- collider. The upper limit on the leptonic width of a narrow resonance Gamma(R -> ee) Br(R -> hadr) < 120 eV has been obtained (at 90 % C.L.)

New precision measurement of the J/ψJ/\psi- and ψ′\psi' -meson masses

A new high precision measurement of the $J/\psi$- and $\psi'$-meson masses has been performed at the VEPP-4M collider using the KEDR detector. The resonant depolarization method has been employed for the absolute calibration of the beam energy. The following mass values have been obtained: $M_{J/\psi} = 3096.917 \pm 0.010 \pm 0.007$ MeV, $M_{\psi'} = 3686.111 \pm 0.025 \pm 0.009$ MeV. The relative measurement accuracy has reached $4. 10^{-6}$ for $J/\psi$ and $7. 10^{-6}$ for $\psi'$, approximately 3 times better than in the previous precise experiments.Comment: 12 pages, 4 tables, 10 figure

Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology