Structural Peculiarities of A3B5 Nanocrystals Created in Si by Ion-Beam Synthesis

We reported the structure peculiarities of nanocrystals formed in Si by means of high-fluence implantation at 25 and 500 °С followed by rapid thermal annealing (RTA). The structure of implanted samples has been investigated by means of transmission electron microscopy (TEM). The crystalline nature of the precipitates is proved by the Moiré fringe patterns presence in the TEM images. The Moiré fringe distance (Moiré period) is equal of 1.8 nm for small precipitates. This experimental value coincides with the calculated one for crystalline InAs. It is noted a Moiré period increasing in the case of large precipitates. We suppose that this feature is a result of surplus As or In atoms embedded in precipitates. One can see an interesting effect – “glowng” of nanocrystal/Si interfaces at the dark-field images of implanted and annealed samples. We ascribe this effect to a presence of misfit dislocation networks at the InAs/Si interfaces generated as a result of strain relaxation in highly mismatched InAs/Si system. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3543

Band-structure analysis in (Ga,Mn)As epitaxial layers

The ternary III-V semiconductor (Ga,Mn)As has recently drawn a lot of attention as the model diluted ferromagnetic semiconductor, combining semiconducting properties with magnetism. (Ga,Mn)As layers are usually gown by the low-temperature molecular-beam epitaxy (LT-MBE) technique. Below a magnetic transition temperature, TC, substitutional Mn2+ ions are ferromagnetically ordered owing to interaction with spin-polarized holes. However, the character of electronic states near the Fermi energy and the valence-band structure in ferromagnetic (Ga,Mn)As are still a matter of controversy. The photoreflectance (PR) spectroscopy was applied to study the band-structure evolution in (Ga,Mn)As layers with increasing Mn content. We have investigated thick (800 - 700nm and 230 – 300nm) (Ga,Mn)As layers with Mn content in the range from 0.001% to 6% and, as a reference, undoped GaAs layer, grown by LT-MBE on semiinsulating (001) GaAs substrates. Our findings were interpreted in terms of the model, which assumes that the mobile holes residing in the valence band of ferromagnetic (Ga,Mn)As and the Fermi level position determined by the concentration of valenceband holes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2063

Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals

We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500 ±C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 ±C. A part of the samples implanted at 25 ±C was additionally exposed to H+2 ions (100 keV, 1.2 × 1016 cm−2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2–80 nm and create various concentration and distribution of di˙erent types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively

Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films

Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device (SQUID) magnetometry, Raman spectroscopy, and high resolution X-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E0 electronic transition in (Ga,Mn)As, revealed significant differences between the energy band structures in vicinity of the {\Gamma} point of the Brillouin zone for the two (Ga,Mn)As films. In view of the obtained experimental results the evolution of the valence band structure in (Ga,Mn)As with increasing Mn content is discussed, pointing to a merging the Mn-related impurity band with the host GaAs valence band for high Mn content.Comment: 21 pages, 6 figure

High-resolution microbial community reconstruction by integrating short reads from multiple 16S rRNA regions

The emergence of massively parallel sequencing technology has revolutionized microbial profiling, allowing the unprecedented comparison of microbial diversity across time and space in a wide range of host-associated and environmental ecosystems. Although the high-throughput nature of such methods enables the detection of low-frequency bacteria, these advances come at the cost of sequencing read length, limiting the phylogenetic resolution possible by current methods. Here, we present a generic approach for integrating short reads from large genomic regions, thus enabling phylogenetic resolution far exceeding current methods. The approach is based on a mapping to a statistical model that is later solved as a constrained optimization problem. We demonstrate the utility of this method by analyzing human saliva and Drosophila samples, using Illumina single-end sequencing of a 750 bp amplicon of the 16S rRNA gene. Phylogenetic resolution is significantly extended while reducing the number of falsely detected bacteria, as compared with standard single-region Roche 454 Pyrosequencing. Our approach can be seamlessly applied to simultaneous sequencing of multiple genes providing a higher resolution view of the composition and activity of complex microbial communities

Identification of rare alleles and their carriers using compressed se(que)nsing

Identification of rare variants by resequencing is important both for detecting novel variations and for screening individuals for known disease alleles. New technologies enable low-cost resequencing of target regions, although it is still prohibitive to test more than a few individuals. We propose a novel pooling design that enables the recovery of novel or known rare alleles and their carriers in groups of individuals. The method is based on a Compressed Sensing (CS) approach, which is general, simple and efficient. CS allows the use of generic algorithmic tools for simultaneous identification of multiple variants and their carriers. We model the experimental procedure and show via computer simulations that it enables the recovery of rare alleles and their carriers in larger groups than were possible before. Our approach can also be combined with barcoding techniques to provide a feasible solution based on current resequencing costs. For example, when targeting a small enough genomic region (∼100 bp) and using only ∼10 sequencing lanes and ∼10 distinct barcodes per lane, one recovers the identity of 4 rare allele carriers out of a population of over 4000 individuals. We demonstrate the performance of our approach over several publicly available experimental data sets

Lorentz and CPT Violating Chern-Simons Term in the Derivative Expansion of QED

We calculate by the method of dimensional regularization and derivative expansion the one-loop effective action for a Dirac fermion with a Lorentz-violating and CPT-odd kinetic term in the background of a gauge field. We show that this term induces a Chern-Simons modification to Maxwell theory. Some related issues are also discussed.Comment: 6 pages, no figure, RevTex, A revised versio

Inhomogeneous Field Configurations and the Electroweak Phase Transition

We investigate the effects of inhomogeneous scalar field configurations on the electroweak phase transition. For this purpose we calculate the leading perturbative correction to the wave function correction term Z(\vph,T), i.e., the kinetic term in the effective action, for the electroweak Standard Model at finite temperature and the top quark self--mass. Our finding for the fermionic contribution to Z(\vph,T) is infra--red finite and disagrees with other recent results. In general, neither the order of the phase transition nor the temperature at which it occurs change, once Z(\vph,T) is included. But a non--vanishing, positive (negative) Z(\vph,T) enhances (decreases) the critical droplet surface tension and the strength of the phase transition. We find that in the range of parameter space, which allows for a first--order phase transition, the wave function correction term is negative --- indicating a weaker phase transition --- and especially for small field values so large that perturbation theory becomes unreliable.Comment: 23 pages of LaTeX + 3 PostScript figures included in uuencoded form, FERMI-PUB-93/253-