Entanglement genesis by ancilla-based parity measurement in 2D circuit QED

We present an indirect two-qubit parity meter in planar circuit quantum electrodynamics, realized by discrete interaction with an ancilla and a subsequent projective ancilla measurement with a dedicated, dispersively coupled resonator. Quantum process tomography and successful entanglement by measurement demonstrate that the meter is intrinsically quantum non-demolition. Separate interaction and measurement steps allow commencing subsequent data qubit operations in parallel with ancilla measurement, offering time savings over continuous schemes.Comment: 5 pages, 4 figures; supplemental material with 5 figure

Long hold times in a two-junction electron trap

The hold time $\tau$ of a single-electron trap is shown to increase significantly due to suppression of environmentally assisted tunneling events. Using two rf-tight radiation shields instead of a single one, we demonstrate increase of $\tau$ by a factor exceeding $10^3$, up to about 10 hours, for a trap with only two superconductor (S) -- normal-metal (N) tunnel junctions and an on-chip resistor $R$ (R-SNS structure). In the normal state, the improved shielding made it possible to observe $\tau\sim$ 100 s, which is in reasonable agreement with the quantum-leakage-limited level expected for the two-electron cotunneling process.Comment: 4 pages, 3 figure

Single-electron current sources: towards a refined definition of ampere

Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus of research for metrological purposes. In this review we first discuss the generic physical phenomena and technical constraints that influence charge transport. We then present the broad variety of proposed realizations. Some of them have already proven experimentally to nearly fulfill the demanding needs, in terms of transfer errors and transfer rate, of quantum metrology of electrical quantities, whereas some others are currently "just" wild ideas, still often potentially competitive if technical constraints can be lifted. We also discuss the important issues of read-out of single-electron events and potential error correction schemes based on them. Finally, we give an account of the status of single-electron current sources in the bigger framework of electric quantum standards and of the future international SI system of units, and briefly discuss the applications and uses of single-electron devices outside the metrological context.Comment: 55 pages, 38 figures; (v2) fixed typos and misformatted references, reworded the section on AC pump

Environmentally activated tunneling events in a hybrid single-electron box

We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor–normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a manner that is consistent with activation of first-order tunneling events by an external dissipative electromagnetic environment. We demonstrate that the rates for energetically unfavorable tunneling events saturate to finite values at low temperatures, and that the saturation level can be suppressed by more than an order of magnitude by a capacitive shunt near the device. The findings are important in assessing the performance limits of any single-electronic device. In particular, master-equation-based simulations show that the electromagnetic environment realized in the capacitively shunted devices allows for a metrologically accurate charge pump based on hybrid tunnel junctions.Peer reviewe

Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment

Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local high-ohmic resistor increased the hold time of the trap by up to two orders of magnitude. A strong effect of on-chip noise filtering was observed for different on-chip geometries. The obtained results are promising for realization of the current standard on the basis of the S-N hybrid turnstile.Comment: 4 pages 3 figures LT2

Low-temperature characterization of Nb-Cu-Nb weak links with Ar ion-cleaned interfaces

We characterize niobium-based lateral Superconductor (S) - Normal metal (N) - Superconductor weak links through low-temperature switching current measurements and tunnel spectroscopy. We fabricate the SNS devices in two separate lithography and deposition steps, combined with strong argon ion cleaning before the normal metal deposition in the last step. Our SNS weak link consists of high-quality sputtered Nb electrodes that are contacted with evaporated Cu. The two-step fabrication flow enables great flexibility in the choice of materials and pattern design. A comparison of the temperature-dependent equilibrium critical supercurrent with theoretical predictions indicates that the quality of the Nb-Cu interface is similar to that of evaporated Al-Cu weak links. Aiming at increased sensitivity, range of operation temperatures, and thermal isolation, we investigate how these SNS structures can be combined with shadow-evaporated aluminum tunnel junctions for sensor applications that utilize the superconducting proximity effect. To this end, we demonstrate a hybrid magnetic flux sensor based on a Nb-Cu-Nb SNS junction, where the phase-dependent normal metal density of states is probed with an Al tunnel junction.Comment: 5 pages, 3 figure

Photon assisted tunneling as an origin of the Dynes density of states

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states (DOS) in the superconductor. In the limit of a resistive low-ohmic environment, this DOS reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.Comment: 4+3 pages, 4 figures; updated to the published version, includes EPAPS supplementary materia

Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor

The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter \gamma. We infer upper bounds n_qp < 0.033 um^-3 and \gamma < 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.Comment: 5 pages, 3 figures; updated to revised version that was accepted for publication, contains data from a reference sample without qp trap