5,420 research outputs found

    Orientation dependence of the optical spectra in graphene at high frequencies

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    On the basis of the Kubo formula we evaluated the optical conductivity of a graphene sheet. The full behavior of frequency as well as temperature dependence of the optical conductivity is presented. We show that the anisotropy of conductivity can be significantly enhanced at high frequencies. The photon absorption depends on the field polarization direction. At the frequency comparable to the maximum separation of upper and lower bands the photon-induced conduction of electrons is strongly suppressed if the polarization of field is along the zigzag direction. The corresponding optical conductivity is several orders of magnitude weaker than that when the light is polarizing along the armchair direction. We propose that the property of orientation selection of absorption in the graphene can be used as a basis for a high-frequency partial polarizer.Comment: 5 pages, 5 figure

    Theory of Weiss oscillations in the magnetoplasmon spectrum of Dirac electrons in graphene

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    We present the collective excitations spectrum (magnetoplasmon spectrum) of Dirac electrons in a weakly modulated single graphene layer in the presence of a uniform magnetic field. We consider electric modulation in one-dimension and the magnetic field applied perpendicular to graphene.We derive analytical results for the intra-Landau band plasmon spectrum within the self-consistent-field approach. We find Weiss oscillations in the magnetoplasmon spectrum which is the primary focus of this work. Results are presented for the intra-Landau band magnetoplasmon spectrum as a function of inverse magnetic field. These results are also compared with those of conventional 2DEG. We have found that the Weiss oscillations in the magnetoplasmon spectrum are larger in amplitude compared to those in conventional 2DEG for the same modulation strength, period of modulation and electron density.Comment: 9 pages, 1 figure Phys. Rev. B (accepted for publication

    Raman imaging and electronic properties of graphene

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    Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 μ\mum at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate

    Raman Fingerprint of Charged Impurities in Graphene

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    We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, even in the absence of intentional doping. Doping concentrations up to ~10^13 cm-2 are estimated from the G peak shift and width, and the variation of both position and relative intensity of the second order 2D peak. Asymmetric G peaks indicate charge inhomogeneity on the scale of less than 1 micron.Comment: 3 pages, 5 figure

    Wave packet revivals in a graphene quantum dot in a perpendicular magnetic field

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    We study the time-evolution of localized wavepackets in graphene quantum dots under a perpendicular magnetic field, focusing on the quasiclassical and revival periodicities, for different values of the magnetic field intensities in a theoretical framework. We have considered contributions of the two inequivalent points in the Brillouin zone. The revival time has been found as an observable that shows the break valley degeneracy.Comment: 5 pages, 4 figures, corrected typo, To appear in Phys. Rev.

    2D materials and van der Waals heterostructures

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    The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We review the properties of novel 2D crystals and how their properties are used in new heterostructure devices

    Stacking boundaries and transport in bilayer graphene

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    Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties, with a minimal conductivity of the order of 2e2/h2e^2/h. Here we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains (`solitons'). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.Comment: 13 pages, 15 figures. Published version (Nano Letters

    Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field

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    We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors ν=±1\nu=\pm1 and we observe an enhanced energy gap. In the higher levels, the valley degeneracy is removed at odd filling factors while spin polarized states are formed at even ν\nu. Although the observation of odd filling factors in the higher levels points towards the spontaneous origin of the splitting, we find that the main contribution to the gap at ν=4,8\nu= -4,-8, and 12-12 is due to the Zeeman energy.Comment: 5 pages, 4 figure

    Unconventional quantum Hall effect and Berry’s phase 2pi in bilayer graphene.

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    There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry’s phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry’s phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies
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