One-loop finiteness of the four-dimensional Donaldson-Nair-Schiff non-linear sigma-model

The most general four-dimensional non-linear sigma-model, having the second-order derivatives only and interacting with a background metric and an antisymmetric tensor field, is constructed. Despite its apparent non-renormalizability, just imposing the one-loop UV-finiteness conditions determines the unique model, which may be finite to all orders of the quantum perturbation theory. This model is known as the four-dimensional Donaldson-Nair-Schiff theory, which is a four-dimensional analogue of the standard two-dimensional Wess-Zumino-Novikov-Witten model, and whose unique finiteness properties and an infinite-dimensional current algebra have long been suspected.Comment: 11 pages, LaTeX, macros included; revised versio

Photoelastic properties of zinc-blende (AlGa)N in the UV: picosecond ultrasonic studies

Picosecond ultrasonics was used to study the photoelastic properties of zinc-blende (cubic) c-AlₓGa₁₋ₓN with x around 0.5 The velocities for longitudinal sound in the alloys were measured using ultrafast UV pump-probe experiments with (AlGa)N membranes. Strong Brillouin oscillations were observed in the (AlGa)N films attached to GaAs substrates. These oscillations are due to the dynamical interference of the probe beams reflected from the sample surface and interfaces and a picosecond-duration strain pulse propagating in the alloy layer. Optical and elasto-optical parameters including the complex refractive index and the fundamental band gap of the cubic nitride alloys are determined and compared with the values obtained by ellipsometry

Molecular beam epitaxy of free-standing wurtzite AlxGa1xN layers

Recent developments with group III nitrides present AlxGa1xN based LEDs as realistic devices for new alternative deep ultra-violet light sources. Because there is a significant difference in the lattice parameters of GaN and AlN, AlxGa1xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick wurtzite AlxGa1xN films were grown by PA-MBE on 2-in. GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1xN samples. X-ray microanalysis measurements confirm that the AlN fraction is uniform across the wafer and mass spectroscopy measurements show that the composition is also uniform in depth. We have demonstrated that free-standing wurtzite AlxGa1xN wafers can be achieved by PA-MBE for a wide range of AlN fractions. In order to develop a commercially viable process for the growth of wurtzite AlxGa1xN substrates, we have used a novel Riber plasma source and have demonstrated growth rates of GaN up to 1.8 mm/h on 2-in. diameter GaAs and sapphire wafer

Essential Role of Correlations in Governing Charge Transport in Disordered Organic Materials

The transport of photoinjected charges in disordered organic films is often interpreted using a formula based on a Gaussian disorder model (GDM) that neglects spatial correlations due to charge-dipole interactions, even though such correlations have recently been shown to explain the universal electric field dependence observed in these systems. Based on extensive computer simulations of a 3D disorder model that includes such correlations, we present a new formula for analyzing experiments that accurately describes transport in these materials

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able

Growth of free-standing wurtzite AlGaN by MBE using a highly efficient RF plasma source

Ultraviolet light emitting diodes (UV LEDs) are now being developed for various potential applications including water purification, surface decontamination, optical sensing, and solid-state lighting. The basis for this development is the successful production of AlxGa1_xN UV LEDs grown by either metal-organic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). Initial studies used mainly sapphire as the substrate, but this result in a high density of defects in the epitaxial films and now bulk GaN or AlN substrates are being used to reduce this to acceptable values. However, the lattice parameters of GaN and AlN are significantly different, so any AlGaN alloy grown on either substrate will still be strained. If, however, AlGaN substrates were available, this problem could be avoided and an overall lattice match achieved. At present, the existing bulk GaN and AlN substrates are produced by MOVPE and physical vapor transport, but thick freestanding films of AlGaN are difficult to produce by either method. The authors have used plasmaassisted MBE to grow free-standing AlxGa1_xN up to 100 lm in thickness using both an HD25source from Oxford Applied Research and a novel high efficiency source from Riber to provide active nitrogen. Films were grown on 2- and 3-in. diameter sapphire and GaAs (111)B substrates with growth rates ranging from 0.2 to 3 lm/h and with AlN contents of 0% and _20%. Secondary ion mass spectrometer studies show uniform incorporation of Al, Ga, and N throughout the films, and strong room temperature photoluminescence is observed in all cases. For films grown on GaAs, the authors obtained free-standing AlGaN substrates for subsequent growth by MOVPE or MBE by removing the GaAs using a standard chemical etchant. The use of high growth rates makes this a potentially viable commercial process since AlxGa1_xN free-standing films can be grown in a single day and potentially this method could be extended to a multiwafer system with a suitable plasma source

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Recent developments with group III nitrides suggest AlxGa1-xN based LEDs can be new alternative commer-cially viable deep ultra-violet light sources. Due to a sig-nificant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free-standing wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE) using a novel RF plasma source. Thick wurtz-ite AlxGa1-xN films were grown by PA-MBE on 2-inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1-xN samples. Growth rates of AlxGa1-xN up to 3 μm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free-standing bulk AlxGa1-xN layers in a single day’s growth, which makes our MBE bulk growth technique commercially vi-able

Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi

We report terahertz optical conductivity measurements of the highly mismatched alloy, GaNBi. We find that in these amorphous GaNBi epilayers grown using plasma assisted molecular beam epitaxy, the optical conductivity is enhanced in the samples grown at higher gallium beam equivalent pressure (BEP). The optical conductivity spectra in these pseudo-amorphous epilayers follow a Drude–Smith behaviour due to charge confinement effects. The direct current conductivity in the epilayers grown at the highest Ga BEP (3.1 × 10−7 Torr) show an increase of three orders of magnitude compared to the one grown at the lowest Ga BEP (2.0 × 10−7 Torr). Our measurements suggests a percolative transition from an insulating nature in the GaNBi epilayers grown at low Ga BEP to a highly conducting phase in the epilayers grown at high Ga BEP