Optical frequency synthesizer with an integrated erbium tunable laser.

Optical frequency synthesizers have widespread applications in optical spectroscopy, frequency metrology, and many other fields. However, their applicability is currently limited by size, cost, and power consumption. Silicon photonics technology, which is compatible with complementary-metal-oxide-semiconductor fabrication processes, provides a low-cost, compact size, lightweight, and low-power-consumption solution. In this work, we demonstrate an optical frequency synthesizer using a fully integrated silicon-based tunable laser. The synthesizer can be self-calibrated by tuning the repetition rate of the internal mode-locked laser. A 20 nm tuning range from 1544 to 1564 nm is achieved with ~10-13 frequency instability at 10 s averaging time. Its flexibility and fast reconfigurability are also demonstrated by fine tuning the synthesizer and generating arbitrary specified patterns over time-frequency coordinates. This work promotes the frequency stability of silicon-based integrated tunable lasers and paves the way toward chip-scale low-cost optical frequency synthesizers

Efficient nanoscale photonic devices and monolithic electronic-photonic subsystems in sub-100 nm SOI CMOS

We demonstrate efficient photonic devices that rely on sub-100nm features in unmodified 45nm SOI CMOS, including photonic crystals, array-antenna grating couplers, and modulators. We then show monolithically integrated electronicphotonic systems comprising millions of transistors and thousands of photonic devices, including a complete chip-to-chip photonic link

Dual-wavelength radar technique development for snow rate estimation : a case study from GCPEx

Quantitative precipitation estimation (QPE) of snowfall has generally been expressed in power-law form between equivalent radar reflectivity factor (Z(e)) and liquid equivalent snow rate (SR). It is known that there is large variability in the prefactor of the power law due to changes in particle size distribution (PSD), density, and fall velocity, whereas the variability of the exponent is considerably smaller. The dual-wavelength radar reflectivity ratio (DWR) technique can improve SR accuracy by estimating one of the PSD parameters (characteristic diameter), thus reducing the variability due to the prefactor. The two frequencies commonly used in dual-wavelength techniques are Ku- and Kabands. The basic idea of DWR is that the snow particle size-to-wavelength ratio is falls in the Rayleigh region at Ku-band but in the Mie region at Ka-band. We propose a method for snow rate estimation by using NASA D3R radar DWR and Ka-band reflectivity observations collected during a long-duration synoptic snow event on 30-31 January 2012 during the GCPEx (GPM Cold-season Precipitation Experiment). Since the particle mass can be estimated using 2-D video disdrometer (2DVD) fall speed data and hydrodynamic theory, we simulate the DWR and compare it directly with D3R radar measurements. We also use the 2DVD-based mass to compute the 2DVD-based SR. Using three different mass estimation methods, we arrive at three respective sets of Z-SR and SR(Z(h), DWR) relationships. We then use these relationships with D3R measurements to compute radar-based SR. Finally, we validate our method by comparing the D3R radar-retrieved SR with accumulated SR directly measured by a well-shielded Pluvio gauge for the entire synoptic event.Peer reviewe

Cryogenic operation of silicon photonic modulators based on the DC Kerr effect

Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform is a highly promising approach to developing large-scale photonic integrated circuits due to its exceptional manufacturability, CMOS compatibility, and high component density. Fast, efficient, and low-loss modulation at cryogenic temperatures in silicon, however, remains an outstanding challenge, particularly without the addition of exotic nonlinear optical materials. In this paper, we demonstrate DC-Kerr-effect-based modulation at a temperature of 5 K at GHz speeds, in a silicon photonic device fabricated exclusively within a CMOS-compatible process. This work opens up a path for the integration of DC Kerr modulators in large-scale photonic integrated circuits for emerging cryogenic classical and quantum computing applications.National Science Foundation (Grant ECCS-1933556)Air Force Office of Scientific Research (Grant FA9550-16-1-0391)Defense Advanced Research Projects Agency (Grant HR0011-15-C-0056

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform.

A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped Al2O3 sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two Si3N4 microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz