Tunable hole spin-photon interaction based on g-matrix modulation

We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the applied gate voltages and the magnetic-field orientation enable a versatile control of the spin-photon interaction, whose character can be switched from fully transverse to fully longitudinal. The longitudinal coupling is actually maximal when the transverse one vanishes and vice-versa. This "reciprocal sweetness" results from geometrical properties of the g-matrix and protects the spin against dephasing or relaxation. We estimate coupling rates reaching ~ 10 MHz in realistic settings and discuss potential circuit-QED applications harnessing either the transverse or the longitudinal spin-photon interaction. Furthermore, we demonstrate that the g-matrix curvature can be used to achieve parametric longitudinal coupling with enhanced coherence

Accurate strain measurements in highly strained Ge microbridges

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression.Comment: 10 pages, 4 figure

An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes

We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths.Comment: 9 pages, 3 figures, pdf file available at http://sscu.iisc.ernet.in/~sampan/publications.htm

Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation.Comment: 18 pages, 6 figures Submitted to New Journal of Physic

Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode

Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating the impacts of such interfaces on the coherence and spectral properties of electron spins is critical to realize such applications, but is also challenging: inferring such data from single-spin studies requires many measurements to obtain meaningful results, while ensemble measurements typically give averaged results that hide critical information. Here, we report a comprehensive study of the coherence of near-surface bismuth donor spins in 28-silicon at millikelvin temperatures. In particular, we use strain-induced frequency shifts caused by a metallic electrode to make spatial maps of spin coherence as a function of depth and position relative to the electrode. By measuring magnetic-field-insensitive clock transitions we separate magnetic noise caused by surface spins from charge noise. Our results include quantitative models of the strain-split spin resonance spectra and extraction of paramagnetic impurity concentrations at the silicon surface. The interplay of these decoherence mechanisms for such near-surface electron spins is critical for their application in quantum technologies, while the combination of the strain splitting and clock transition extends the coherence lifetimes by up to two orders of magnitude, reaching up to 300 ms at a mean depth of only 100nm. The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals.Comment: 16 pages, 11 figure

Spin states of the first four holes in a silicon nanowire quantum dot

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire.Comment: 24 pages, 8 figures, both including supporting informatio

Quantum Impurity Entanglement

Entanglement in J_1-J_2, S=1/2 quantum spin chains with an impurity is studied using analytic methods as well as large scale numerical density matrix renormalization group methods. The entanglement is investigated in terms of the von Neumann entropy, S=-Tr rho_A log rho_A, for a sub-system A of size r of the chain. The impurity contribution to the uniform part of the entanglement entropy, S_{imp}, is defined and analyzed in detail in both the gapless, J_2 <= J_2^c, as well as the dimerized phase, J_2>J_2^c, of the model. This quantum impurity model is in the universality class of the single channel Kondo model and it is shown that in a quite universal way the presence of the impurity in the gapless phase, J_2 <= J_2^c, gives rise to a large length scale, xi_K, associated with the screening of the impurity, the size of the Kondo screening cloud. The universality of Kondo physics then implies scaling of the form S_{imp}(r/xi_K,r/R) for a system of size R. Numerical results are presented clearly demonstrating this scaling. At the critical point, J_2^c, an analytic Fermi liquid picture is developed and analytic results are obtained both at T=0 and T>0. In the dimerized phase an appealing picure of the entanglement is developed in terms of a thin soliton (TS) ansatz and the notions of impurity valence bonds (IVB) and single particle entanglement (SPE) are introduced. The TS-ansatz permits a variational calculation of the complete entanglement in the dimerized phase that appears to be exact in the thermodynamic limit at the Majumdar-Ghosh point, J_2=J_1/2, and surprisingly precise even close to the critical point J_2^c. In appendices the relation between the finite temperature entanglement entropy, S(T), and the thermal entropy, S_{th}(T), is discussed and and calculated at the MG-point using the TS-ansatz.Comment: 62 pages, 27 figures, JSTAT macro

Towards scalable silicon quantum computing

We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures