Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates

Ink-jet printed devices on the flexible substrate are inexpensive and large area compatible as compared to rigid substrates. However, during fabrication and service they are subjected to complex strains, resulting in crack formation or delamination within the layers, affecting the device performance. Therefore, it is necessary to understand their failure mechanisms by correlating their electrical or structural properties with applied strain, supported by detailed microstructural investigations

Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates

Ink-jet printed devices on the flexible substrate are inexpensive and large area compatible as compared to rigid substrates. However, during fabrication and service they are subjected to complex strains, resulting in crack formation or delamination within the layers, affecting the device performance. Therefore, it is necessary to understand their failure mechanisms by correlating their electrical or structural properties with applied strain, supported by detailed microstructural investigations

Monitoring of stress–strain evolution in thin films by reflection anisotropy spectroscopy and synchrotron X-ray diffraction

ISSN:0022-2461ISSN:1573-480

Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides

Inkjet printed and low voltage (≤1 V) driven field-effect transistors (FETs) are prepared from precursor-made In₂O₃ as the transistor channel and a composite solid polymer electrolyte (CSPE) as the gate dielectric. Printed halide precursors are annealed at different temperatures (300–500 °C); however, the devices that are heated to 400 °C demonstrate the best electrical performance including field-effect mobility as high as 126 cm² V^–1 s^–1 and subthreshold slope (68 mV/dec) close to the theoretical limit. These outstanding device characteristics in combination with ease of fabrication, moderate annealing temperatures and low voltage operation comprise an attractive set of parameters for battery compatible and portable electronics