Decision making modeling in port operation management

Сформулированы новые подходы к улучшению системы управления и организации работы портовой инфраструктуры с применением моделирования процессов управления работы порта, направленных на повышение уровня организации и эффективности функционирования систем управления и обработки транспортных средств в морских портах

Estimating the First-year Corrosion Losses of Structural Metals for Continental Regions of the World

The knowledge of the first-year corrosion losses of metals (K1) in various regions of the world is of great importance in engineering applications. The K1 values are used to determine the categories of atmospheric corrosivity, and K1 is also the main parameter in models for the prediction of long-term corrosion losses of metals. In the absence of experimental values of K1, their values can be predicted on the basis of meteorological and aerochemical parameters of the atmosphere using the dose-response functions (DRF). Currently, the DRFs presented in ISO 9223:2012(E) /1/ standard are used for predicting K1 in any region of the world, along with the unified DRFs /2/ and the new DRFs /3/. The predicted values of corrosion losses (K1pr) of carbon steel, zinc, copper and aluminum obtained by various DRFs for various continental regions of the world are presented. In this work we used the atmosphere corrosivity parameters and experimental data on the corrosion losses of metals for the first year of exposure (K1exp) for the locations of the tests performed under the international UN/ECE program, the MICAT project, and the Russian program. For the first time, a comparative assessment of the reliability of various DRFs is given by comparing the values of K1pr and K1ex using graphical and statistical methods. The statistical indicators of reliability of predicting the corrosion losses of metals are calculated for various categories of atmosphere corrosivity. It is shown that the new dose-response functions offer the highest reliability for all categories of atmosphere corrosivity

Thermoelectric prospects of nanomaterials with spin-orbit surface bands

Nanostructured composites and nanowire arrays of traditional thermoelectrics like Bi, Bi(1-x)Sb(x) and Bi(2)Te(3) have metallic Rashba surface spin-orbit bands featuring high mobilities rivaling that of the bulk for which topological insulator behavior has been proposed. Nearly pure surface electronic transport has been observed at low temperatures in Bi nanowires with diameter around the critical diameter, 50 nm, for the semimetal-to semiconductor transition. The surface contributes strongly to the thermopower, actually dominating for temperatures T < 100 K in these nanowires. The surface thermopower was found to be -1 T microvolt/(K^2), a value that is consistent with theory. We show that surface electronic transport together with boundary phonon scattering leads to enhanced thermoelectric performance at low temperatures of Bi nanowire arrays. We compare with bulk n-BiSb alloys, optimized CsBi(4)Te(6) and optimized Bi(2)Te(3). Surface dominated electronic transport can be expected in nanomaterials of the other traditional thermoelectrics.Comment: 18 pages, 3 figure

Surface state band mobility and thermopower in semiconducting bismuth nanowires

Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20-, 30-, 50- and 200-nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities and mobilities. Surface electrons have high mobilities exceeding 2(m^2)/(Vsec) and contribute strongly to the thermopower, dominating for temperatures T< 100 K. The surface thermopower is - 1.2 T microvolt/(K^2), a value that is consistent with theory, raising the prospect of developing nanoscale thermoelectrics based on surface bands.Comment: 19 pages. 3 figure

Observation of three-dimensional behavior in surface states of bismuth nanowires and the evidence for bulk Bi charge fractionalization

Whereas bulk bismuth supports very-high mobility, light, Dirac electrons and holes in its interior, its boundaries support a layer of heavy electrons in surface states formed by spin orbit interaction in the presence of the surface electric field. Small diameter d trigonal Bi nanowires (30 nm < d < 200 nm) were studied via magnetotransport at low temperatures and for fields up to 14 T in order to investigate the role of surfaces in electronic transport. A two-dimensional behavior was expected for surface charges; however we found instead a three-dimensional behavior, with a rich spectrum of Landau levels in a nearly spherical Fermi surface. This is associated with the long penetration length of surface states of trigonal wires. The prospect of the participation of surface transport and surface-induced relaxation of bulk carriers in the electronic properties of macroscopic samples is evaluated. We show that recent observations of magnetoquantum peaks in the Nernst thermopower coefficient, attributed to two-dimensional electron gas charge fractionalization, can be more plausibly interpreted in terms of these surface states.Comment: 14 pages, 3 figure

Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance

We report the observation of a dependence of the low temperature resistance of individual single-crystal bismuth nanowires on the Aharonov-Bohm phase of the magnetic flux threading the wire. 55 and 75-nm wires were investigated in magnetic fields of up to 14 T. For 55 nm nanowires, longitudinal magnetoresistance periods of 0.8 and 1.6 T that were observed at magnetic fields over 4 T are assigned to h/2e to h/e magnetic flux modulation. The same modes of oscillation were observed in 75-nm wires. The observed effects are consistent with models of the Bi surface where surface states give rise to a significant population of charge carriers of high effective mass that form a highly conducting tube around the nanowire. In the 55-nm nanowires, the Fermi energy of the surface band is estimated to be 15 meV. An interpretation of the magnetoresistance oscillations in terms of a subband structure in the surface states band due to quantum interference in the tube is presented.Comment: 30 pages, 9 figure

Optoelectronic Inactivity of Dislocations in Cu In,Ga Se2 Thin Films

High efficiency Cu In,Ga Se2 CIGS thin film solar cells are based on poly crystalline CIGS absorber layers, which contain grain boundaries, stacking faults, and dislocations. While planar defects in CIGS layers have been investigated extensively, little is still known about the impact of dislocations on optoelectronic properties of CIGS absorbers. Herein, evidence for an optoelectronic inactivity of dislocations in these thin films is given, in contrast to the situation at grain boundaries. This unique behavior is explained by the extensive elemental redis tribution detected around dislocation cores, which is connected with the dislocation strain field, probably leading to a shift of defect states toward the band edge

Observation of η′→ωe+e−\eta^{\prime}\to\omega e^{+} e^{-}

Based on a sample of \etapr mesons produced in the radiative decay $J/\psi\to\gamma\eta^{\prime}$ in $1.31\times 10^9$ $J/\psi$ events collected with the BESIII detector, the decay $\eta^{\prime}\to\omega e^{+} e^{-}$ is observed for the first time, with a statistical significance of $8\sigma$. The branching fraction is measured to be $\mathcal{B}(\eta^{\prime}\to\omega e^{+} e^{-})=(1.97\pm0.34(\text{stat})\pm0.17(\text{syst}))\times10^{-4}$, which is in agreement with theoretical predictions. The branching fraction of $\eta^{\prime}\to\omega\gamma$ is also measured to be $(2.55\pm0.03(\text{stat})\pm0.16(\text{syst}))\times10^{-2}$, which is the most precise measurement to date, and the relative branching fraction $\frac{\mathcal{B}(\eta^{\prime}\to \omega e^{+}e^{-})}{\mathcal{B}(\eta^{\prime}\to \omega \gamma)}$ is determined to be $(7.71\pm1.34(\text{stat})\pm0.54(\text{syst}))\times10^{-3}$.Comment: 8 pages, 10 figure