A novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistors

A novel technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET's with this kind of gate dielectric show that N2O treatment is superior to conventional reoxidation step in suppressing both electron and hole trappings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap generation are also improved. Thus, N2O treatment on NH3 -nitrided oxide shows excellent electrical and reliability properties, while maintaining sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration.published_or_final_versio

Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques

In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.published_or_final_versio

Off-state leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

This journal vol. entitled: Insulating Films on Semiconductors, Villard-de-Lans, France, 7–10 June 1995Off-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N2OG oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, the method of nitridizing pre-grown thermal oxide (N2ON) is more feasible than directly growing oxide in N2O ambient (N2OG) in view of gate current leakage, especially in leakage-sensitive applications, such as very-low-power battery-based circuits, DRAM cells ...postprin

Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

The off-state gate current of n-channel MOSFETs with OX, RONO, N20N, and N20G oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in the low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N20G oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, in view of gate leakage, the method of nitridizing pre-grown thermal oxide is more feasible than directly growing oxide in N2O ambient, especially in leakage sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc.published_or_final_versio

Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress

Conference Theme: Asia-Pacific Microelectronics 2000A new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stresspublished_or_final_versio

Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric

This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.published_or_final_versio

AC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics

Frequency-dependent ac-stress-induced degradation in NMOSFET's with N 2O-grown and N 2O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N 2O-based devices as compared to SiO 2 device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides. Moreover, when comparing the two N 2O-based oxides, N 2O-grown oxide device exhibits enhanced degradation than N 2O-nitrided oxide device. Charge pumping measurements reveal that N 2O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.published_or_final_versio

Latch-up characteristics of a trench-gate conductivity modulated power transistor

Conference Theme: Asia-Pacific Microelectronics 2000In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p+ cathode.published_or_final_versio

Poly[dimethylammonium aquadi-μ-oxalato-europate(III) trihydrate]

In the crystal structure of the polymeric title compound, (C2H8N)[Eu(C2O4)2(H2O)]·3H2O, the independent oxalate that lies on a general position chelates to two Eu atoms, as do the other two oxalates that lie on different centres of inversion, the bridging mode of the oxalates giving rise to a three-dimensional anionic network. The water-coordinated Eu atom exists in a tricapped trigonal–prismatic geometry. The cations and solvent water mol­ecules occupy the cavities of the network and are involved in hydrogen bonding with each other and with the network.published_or_final_versio

Mobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardment

Low-energy (550 eV) argon-ion beam was used to bombard directly, the backsurface of nitrided n-MOSFET's after the completion of all conventional nMOS processing steps. The interface characteristics and inversion layer mobility of the MOS devices were investigated. The results show that, as bombardment time increases, interface state density and fixed charge density decrease first, and then the change slows down or even turns around. Correspondingly, the carrier mobility and drain conductance of the MOS devices are found to enhance first, and then saturate or turn around. Therefore, this simple technique, which is readily compatible with existing IC processing, is effective for restoring some of the lost device performance associated with gate-oxide nitridation.published_or_final_versio