«Теоретичнi i прикладнi проблеми фiзики, математики та інформатики», XV Всеукраїнська науково-практична конференцiя студентiв, аспiрантiв та молодих вчених

Impact of pulsed electron beam irradiation conditions and component composition on physical properties of radiation crosslinked hydrogels based on poly(vinyl alcohol)-polyethylene glycol (PVA-PEG) complex has been investigated in terms of wound dressing applications. A significant influence of electron beam density and sample temperature during irradiation on crosslinking processes has been obtained experimentally. Results have been analyzed using the term «optimal crosslinking dose» Doc, which is more convenient to use if it necessary to evaluate hydrogel crosslinking quality as wound dressings. Thus, essential dependencies Doc on the sample temperature, electron beam density (dose rate) and PVA/PEG mass fraction have been explored

Nanocrystals Growth Control during Laser Annealing of Sn:(α-Si) Composites

An efficient technique for low temperature metal-induced nanocrystalline silicon fabrication is presented. The technique is based on laser annealing of thin films of “amorphous silicon-tin” composites combined with in situ control and monitoring with Raman technique. Laser annealing was shown to provide the possibility of fine-tuning the nanocrystals size and concentration, which is important in photovoltaic and thermoelectric devices fabrication

Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy in thin-film structures Si-Sn-Si irradiated with pulsed laser light. We have found and analyzed dependencies of the nanocrystals’ size and concentration on the laser pulse intensity for 10 ns and 150 μm duration laser pulses at the wavelengths of 535 nm and 1070 nm. Efficient transformation of the amorphous silicon into a crystalline phase during the 10 ns time interval of the acting laser pulse in the 200 nm thickness films of the amorphous silicon was demonstrated. The results were analyzed theoretically by modeling the spatial and temporal distribution of temperature in the amorphous silicon sample within the laser spot location. Simulations confirmed importance of light absorption depth (irradiation wavelength) in formation and evolution of the temperature profile that affects the crystallization processes in irradiated structures