Pressure Tuning of an Ionic Insulator into a Heavy Electron Metal: An Infrared Study of YbS

Optical conductivity [$\sigma(\omega)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $\sigma(\omega)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction ($c$) band. Above 8 GPa, however, $\sigma(\omega)$ increases dramatically, developing a Drude component due to heavy carriers and characteristic infrared peaks. It is shown that increasing pressure has caused an energy overlap and hybridization between the $c$ band and 4$f$ state, thus driving the initially ionic and insulating YbS into a correlated metal with heavy carriers

Possible Kondo resonance in PrFe4P12 studied by bulk-sensitive photoemission

Pr 4f electronic states in Pr-based filled skutterudites PrT4X12(T=Fe and Ru; X=P and Sb) have been studied by high-resolution bulk-sensitive Pr 3d-4f resonance photoemission. A very strong spectral intensity is observed just below the Fermi level in the heavy-fermion system PrFe4P12. The increase of its intensity at lower temperatures is observed. We speculate that this is the Kondo resonance of Pr, the origin of which is attributed to the strong hybridization between the Pr 4f and the conduction electrons.Comment: 4 pages(camera ready format), 4 figures, ReVTeX

Infrared study of valence transition compound YbInCu4 using cleaved surfaces

Optical reflectivity R(w) of YbInCu4 single crystals has been measured across its first-order valence transition at T_v ~ 42 K, using both polished and cleaved surfaces. R(w) measured on cleaved surfaces Rc(w) was found much lower than that on polished surface Rp(w) over the entire infrared region. Upon cooling through T_v, Rc(w) showed a rapid change over a temperature range of less than 2 K, and showed only minor changes with further cooling. In contrast, Rp(w) showed much more gradual and continuous changes across T_v, similarly to previously reported data on polished surfaces. The present result on cleaved surfaces demonstrates that the microscopic electronic structures of YbInCu4 observed with infrared spectroscopy indeed undergo a sudden change upon the valence transition. The gradual temperature-evolution of Rp(w) is most likely due to the compositional and/or Yb-In site disorders caused by polishing.Comment: 4 pages, 4 figures, Fig.1(a) correcte

Optical conductivity of the Kondo insulator YbB_12: Gap formation and low-energy excitations

Optical reflectivity experiments have been conducted on single crystals of the Kondo insulator YbB_12 in order to obtain its optical conductivity, \sigma(\omega). Upon cooling below 70 K, a strong supression of \sigma(\omega) is seen in the far-infrared region, indicating the opening of an energy gap of ~ 25 meV. This gap development is coincident with a rapid decrease in the magnetic susceptibility, which shows that the gap opening has significant influence on magnetic properties. A narrow, asymmetric peak is observed at ~40 meV in \sigma(\omega), which is attributed to optical transitions between the Yb 4f-derived states across the gap. In addition, a broad peak is observed at ~0.25 eV. This peak is attributed to transitions between Yb 4f-derived states and p-d band, and is reminiscent of similar peaks previously observed for rare-earth hexaborides.Comment: 4 pages, 4 figure

Theory of Metal-Insulator Transition in PrRu4P12 and PrFe4P12

All symmetry allowed couplings between the 4f^2-electron ground state doublet of trivalent praseodymium in PrRu4P12 and PrFe4P12 and displacements of the phosphorus, iron or ruthenium ions are considered. Two types of displacements can change the crystal lattice from body-centred cubic to simple orthorhombic or to simple cubic. The first type lowers the point group symmetry from tetrahedral to orthorhombic, while the second type leaves it unchanged, with corresponding space group reductions Im3 --> Pmmm and Im3 --> Pm3 respectively. In former case, the lower point-group symmetry splits the degeneracy of the 4f^2 doublet into states with opposite quadrupole moment, which then leads to anti-quadrupolar ordering, as in PrFe4P12. Either kind of displacement may conspire with nesting of the Fermi surface to cause the metal-insulator or partial metal-insulator transition observed in PrFe4P12 and PrRu4P12. We investigate this scenario using band-structure calculations, and it is found that displacements of the phosphorus ions in PrRu4P12 (with space group reduction Im3 --> Pm3) open a gap everywhere on the Fermi surface.Comment: 6 page

Metal-insulator transition in PrRu4_4P12_{12} and SmRu4_4P12_{12} investigated by optical spectroscopy

Electronic structures of the filled-skutterudite compounds PrRu$_4$P$_{12}$ and SmRu$_4$P$_{12}$, which undergo a metal-insulator transition (MIT) at $T_{\rm MI}$ = 60 K and 16 K, respectively, have been studied by means of optical spectroscopy. Their optical conductivity spectra develop an energy gap of $\sim$ 10 meV below $T_{\rm MI}$. The observed characteristics of the energy gap are qualitatively different from those of the Kondo semiconductors. In addition, optical phonon peaks in the spectra show anomalies upon the MIT, including broadening and shifts at $T_{\rm MI}$ and an appearance of new peaks below $T_{\rm MI}$. These results are discussed in terms of density waves or orbital ordering previously predicted for these compounds.Comment: 4pages, 4figures, submitted to Physical Review

Bulk-sensitive Photoemission of Mn5Si3

We have carried out a bulk-sensitive high-resolution photoemission experiment on Mn5Si3. The measurements are performed for both core level and valence band states. The Mn core level spectra are deconvoluted into two components corresponding to different crystallographic sites. The asymmetry of each component is of noticeable magnitude. In contrast, the Si 2p spectrum shows a simple Lorentzian shape with low asymmetry. The peaks of the valence band spectrum correspond well to the peak positions predicted by the former band calculation.Comment: To be published in: Solid State Communication

Electron self-trapping in intermediate-valent SmB6

SmB6 exhibits intermediate valence in the ground state and unusual behaviour at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf-hybridization or by hopping transport in an impurity band. At least three different energy scales determine three temperature regimes of electron transport in this system. We consider the ground state properties, the soft valence fluctuations and the spectrum of band carriers in n-doped SmB6. The behaviour of excess conduction electrons in the presence of soft valence fluctuations and the origin of the three energy scales in the spectrum of elementary excitations is discussed. The carriers which determine the low-temperature transport in this system are self-trapped electron-polaron complexes rather than simply electrons in an impurity band. The mechanism of electron trapping is the interaction with soft valence fluctuations.Comment: 12 pages, 3 figure

Possible Kondo resonance in PrFe4P12 studied by bulk-sensitive photoemission

Pr 4f electronic states in Pr-based filled skutterudites PrT4X12 (T = Fe and Ru; X = P and Sb) have been studied by high-resolution bulk-sensitive Pr 3d-->4f resonance photoemission. A very strong spectral intensity is observed just below the Fermi level in the heavy-fermion system PrFe4P12. The increase of its intensity at lower temperatures is observed. We speculate that this is the Kondo resonance of Pr, the origin of which is attributed to the strong hybridization between the Pr 4f and the conduction electrons